N3D100A30 NAINA | Alldatasheet
Document overview
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Technical content
Features
- Low voltage three-phase
- Easy construction
- High surge current capability
- Non-isolated Circuit Configuration Voltage Ratings (T C = 25 OC unless otherwise specified) Parameter Symbol N3D100A30(R) N3D100A40(R) Units Maximum Repetitive Peak Reverse Voltage VRRM 300 400 V Maximum Non-Repetitive Peak Reverse Voltage VRSM 360 480 V DC Reverse Voltage VR(DC) 240 320 V Electrical Characteristics (T C = 25 0C unless otherwise noted) Parameter Symbol Values Units Maximum average forward current IF(AV) 100 A Maximum average RMS forward current IFRMS) 157 A Maximum non-repetitive surge current IFSM 2000 A Maximum I 2t for fusing I2t 20000 A2s Forward voltage drop VFM 1.3 V Maximum Repetitive Peak Reverse Current IR 15 mA Thermal & Mechanical Specifications (T C = 25 0C unless otherwise noted) Parameter Symbol Values Units Operating junction temperature range TJ -30 to +150 0C Storage temperature Tstg -30 to +125 0C Thermal resistance, junction to case Rth(j-c) 0.25 0C/W Mounting torque to heatsink F 2.5 Nm to terminals 2.5 Weight W 240 g Circuit Description Configuration Code Circuit Drawing Common cathode (base plate cathode) N3D Common anode (base plate anode) N3DR
Naina Semiconductor Ltd. N3D100
2 D-95, Sector 63, Noida – 201301, India • Tel: 012 0-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com Package Outline (All dimensions in mm) Ordering Table N3D 100 A 40 R 1 2 3 4 1 – Half-bridge Diode Module 2 – Current Rating = IF(AV) 3 – Voltage Code (see Voltage Ratings table) 4 – Polarity > None = common cathode > R = common anode