ISL9N306AP3 FAIRCHILD | Alldatasheet

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 Fast switching r DS(ON) = 0.0052Ω (Typ), VGS = 10V r DS(ON) = 0.0085Ω (Typ), VGS = 4.5V Q g (Typ) = 30nC, VGS = 5V Q gd (Typ) = 11nC C ISS (Typ) = 3400pF MOSFET Maximum Ratings TA = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V ID Drain Current

75 AContinuous (TC = 25oC, VGS = 10V)

Continuous (TC = 100oC, VGS = 4.5V) 61 A Continuous (TC = 25oC, VGS = V, RθJC = 43oC/W) 18 A Pulsed Figure 4 A PD Power dissipation Derate above 25oC 125 0.83 W W/oC TJ, TSTG Operating and Storage Temperature -55 to 175 oC R θJC Thermal Resistance Junction to Case TO-220, TO-263 1.2 oC/W R θJA Thermal Resistance Junction to Ambient TO-220, TO-263 62 oC/W R θJA Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 43 oC/W Device Marking Device Package Reel Size Tape Width Quantity N306AS ISL9N306AS3ST TO-263AB 330mm 24mm 800 units N306AP ISL9N306AP3 TO-220AB Tube N/A 50 units D G S TO-263AB TO-220AB DRAIN SOURCE GATE DRAIN (FLANGE)

©2002 Fairchild Semiconductor Corporation Rev. B, February 2002 ISL9N306AP3/ISL9N306AS3ST Electrical Characteristics TA = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics (VGS = 4.5V) Switching Characteristics (VGS = 10V) Unclamped Inductive Switching Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V IDSS Zero Gate Voltage Drain Current VDS = 25V - - 1 µAVGS = 0V T C = 150o - - 250 IGSS Gate to Source Leakage Current V GS = ±20V - - ±100 nA VGS(TH) Gate to Source Threshold Voltage V GS = VDS , ID = 250µA1 - 3 V C ISS Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz -3 4 0 0- p F C OSS Output Capacitance - 650 - pF C RSS Reverse Transfer Capacitance - 300 - pF Qg(TOT) Total Gate Charge at 10V V GS = 0V to 10V VDD = 15V ID = 61A Ig = 1.0mA 60 90 nC Q g(5) Total Gate Charge at 5V V GS = 0V to 5V - 30 45 nC Q g(TH) Threshold Gate Charge V GS = 0V to 1V - 3.0 4.5 nC Q gs Gate to Source Gate Charge - 10 - nC Q gd Gate to Drain “Miller” Charge - 11 - nC tON Turn-On Time VDD = 15V, ID = 18A VGS = 4.5V, RGS = 4.3Ω - - 131 ns td(ON) Turn-On Delay Time - 16 - ns tr Rise Time - 70 - ns td(OFF) Turn-Off Delay Time - 34 - ns tf Fall Time - 30 - ns tOFF Turn-Off Time - - 97 ns tON Turn-On Time VDD = 15V, ID = 18A VGS = 10V, RGS = 4.3Ω - - 80 ns td(ON) Turn-On Delay Time - 10 - ns tr Rise Time - 43 - ns td(OFF) Turn-Off Delay Time - 62 - ns tf Fall Time - 29 - ns tOFF Turn-Off Time - - 137 ns tAV Avalanche Time I D = 3.6A, L = 3mH 240 - - µs VSD Source to Drain Diode Voltage ISD = 61A - - 1.25 V ISD = 25A - - 1.0 V trr Reverse Recovery Time I SD = 61A, dISD /dt = 100A/µs- - 3 5 n s Q RR Reverse Recovered Charge I SD = 61A, dISD /dt = 100A/µs- - 3 0 n C

must be reviewed to ensure that TJM is never exceeded. serves as the basis for establishing the rating of the part.

  1. Mounting pad area onto which the device is attached and
  2. The number of copper layers and the thickness of the
  3. The use of external heat sinks.
  4. Air flow and board orientation.
  5. For non steady state applications, the pulse width, the

the board and the environment they are in. maximum transient thermal impedance curve. Figure 21. Thermal Resistance vs Mounting

©2002 Fairchild Semiconductor Corporation Rev. B, February 2002 ISL9N306AP3/ISL9N306AS3ST .SUBCKT ISL9N306A 2 1 3 ;rev May 2001 CA 12 8 2.0e-9 CB 15 14 2.3e-9 CIN 6 8 3e-9 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 35.8 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTHRES 6 21 19 8 1 EVTEMP 20 6 18 22 1 IT 8 17 1 LDRAIN 2 5 1.0e-9 LGATE 1 9 4.58e-9 LSOURCE 3 7 1.47e-9 MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 1e-3 RGATE 9 20 2.69 RLDRAIN 2 5 10 RLGATE 1 9 45.8 RLSOURCE 3 7 14.7 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 3.5e-3 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*275),5))} 0.51) .MODEL DBREAKMOD D (RS = 1.7e- 1TRS1 = 1e- 3TRS2 = -8.9e-6) .MODEL DPLCAPMOD D (CJO = 11.5e-1 0IS = 1e-3 0N = 10 M = 0.46) .MODEL MMEDMOD NMOS (VTO = 1.7 KP = 9 IS=1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.69) .MODEL MSTROMOD NMOS (VTO = 2.1 KP = 100 IS = 1e-30 N= 10 TOX = 1 L = 1u W = 1u) .MODEL RBREAKMOD RES (TC1 = 1e- 3TC2 = -7e-7) .MODEL RDRAINMOD RES (TC1 = 1.2e- 2TC2 = 3.0e-5) .MODEL RSLCMOD RES (TC1 = 1e-3 TC2 = 1e-6) .MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6) .MODEL RVTHRESMOD RES (TC1 = -2.6e-3 TC2 = -7.5e-6) .MODEL RVTEMPMOD RES (TC1 = -1.8e- 3TC2 = 1e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.0 VOFF= -0.8) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.8 VOFF= -4.0) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.3 VOFF= 0.2) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.2 VOFF= -0.3) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. + - + - 8 + RBREAK RVTEMP VBAT RVTHRES IT 17 18 S1A S1B S2A S2B CA CB EGS EDS MWEAK EBREAK DBODY RSOURCE SOURCE 7 3 LSOURCE RLSOURCE CIN RDRAIN EVTHRES 1621 MMED MSTRO DRAIN LDRAIN RLDRAIN DBREAK DPLCAP ESLC RSLC1 RSLC2 GATE RGATE EVTEMP ESG LGATE RLGATE

©2002 Fairchild Semiconductor Corporation Rev. B, February 2002 ISL9N306AP3/ISL9N306AS3ST REV May 2001 template ISL9N306A n2,n1,n3 electrical n2,n1,n3 var i iscl dp..model dbreakmod = (rs =0.17, trs1 = 1e-3, trs2 = -8.9e-6) dp..model dplcapmod = (cjo = 11.5e-10, isl=10e-30, nl=10, m=0.46) m..model mmedmod = (type=_n, vto = 1.7, kp=9, is=1e-30, tox=1) m..model mstrongmod = (type=_n, vto = 2.1, kp = 100, is = 1e-30, tox = 1) c.ca n12 n8 = 2.0e-9 c.cb n15 n14 = 2.3e-9 c.cin n6 n8 = 3e-9 dp.dbody n7 n5 = model=dbodymod dp.dbreak n5 n11 = model=dbreakmod dp.dplcap n10 n5 = model=dplcapmod i.it n8 n17 = 1 l.ldrain n2 n5 = 1e-9 l.lgate n1 n9 = 4.58e-9 l.lsource n3 n7 = 1.47e-9 m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u res.rbreak n17 n18 = 1, tc1 = 1e-3, tc2 = -7e-7 res.rdrain n50 n16 = 1e-3, tc1 = 1.2e-2, tc2 = 3.0e-5 res.rgate n9 n20 = 2.69 res.rldrain n2 n5 = 10 res.rlgate n1 n9 = 45.8 res.rlsource n3 n7 = 14.7 res.rslc1 n5 n51= 1e-6, tc1 = 1e-3, tc2 =1e-6 res.rslc2 n5 n50 = 1e3 res.rsource n8 n7 = 3.5e-3, tc1 = 1e-3, tc2 =1e-6 res.rvtemp n18 n19 = 1, tc1 = -1.8e-3, tc2 = -1e-6 res.rvthres n22 n8 = 1, tc1 = -2.6e-3, tc2 = -7.5e-6 spe.ebreak n11 n7 n17 n18 = 35.8 spe.eds n14 n8 n5 n8 = 1 spe.egs n13 n8 n6 n8 = 1 spe.esg n6 n10 n6 n8 = 1 spe.evtemp n20 n6 n18 n22 = 1 spe.evthres n6 n21 n19 n8 = 1 sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod v.vbat n22 n19 = dc=1 equations { i (n51->n50) +=iscl iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e-6/275))** 5)) + - + - 8 + RBREAK RVTEMP VBAT RVTHRES IT 17 18 S1A S1B S2A S2B CA CB EGS EDS MWEAK EBREAK DBODY RSOURCE SOUR CE 7 3 LSOURCE RLSOURCE CIN RDRAIN EVTHRES 1621 MMED MSTRO DRAIN LDRAIN RLDRAIN DBREAK DPLCAP ISCL RSLC1 RSLC2 GATE RGATE EVTEMP ESG LGATE RLGATE

©2002 Fairchild Semiconductor Corporation Rev. B, February 2002 ISL9N306AP3/ISL9N306AS3ST SPICE Thermal Model REV May 2001 ISL9N306AT CTHERM1 th 6 2.7e-4 CTHERM2 6 5 3.9e-3 CTHERM3 5 4 4.2e-3 CTHERM4 4 3 4.8e-3 CTHERM5 3 2 1.9e-2 CTHERM6 2 tl 5.9e-2 RTHERM1 th 6 1.0e-3 RTHERM2 6 5 4.8e-3 RTHERM3 5 4 4.5e-2 RTHERM4 4 3 2.6e-1 RTHERM5 3 2 3.1e-1 RTHERM6 2 tl 3.4e-1 SABER Thermal Model SABER thermal model ISL9N306AT template thermal_model th tl thermal_c th, tl ctherm.ctherm1 th 6 = 2.7e-4 ctherm.ctherm2 6 5 = 3.9e-3 ctherm.ctherm3 5 4 = 4.2e-3 ctherm.ctherm4 4 3 = 4.8e-3 ctherm.ctherm5 3 2 = 1.9e-2 ctherm.ctherm6 2 tl = 5.9e-2 rtherm.rtherm1 th 6 = 1.0e-3 rtherm.rtherm2 6 5 = 4.8e-3 rtherm.rtherm3 5 4 = 4.5e-2 rtherm.rtherm4 4 3 = 2.6e-1 rtherm.rtherm5 3 2 = 3.1e-1 rtherm.rtherm6 2 tl = 3.4e-1 RTHERM4 RTHERM6 RTHERM5 RTHERM3 RTHERM2 RTHERM1 CTHERM4 CTHERM6 CTHERM5 CTHERM3 CTHERM2 CTHERM1 tl th JUNCTION CASE

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