N2NE10

STN2NE10 STMICROELECTRONICS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

N - CHANNEL 100V - 0.33 Ω - 2A - SOT-223 STripFET POWER MOSFET PRELIMINARY DATA ■ TYPICAL RDS(on) = 0.33 Ω ■ EXCEPTIONAL dv/dt CAPABILITY ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 % AVALANCHE TESTED ■ APPLICATION ORIENTED CHARACTERIZATION

DESCRIPTION

This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size " stip-based process. The resulting transi- stor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a re- markable manufacturing reproducibility.

APPLICATIONS

■ DC MOTOR CONTROL (DISK DRIVES,etc.) ■ DC-DC & DC-AC CONVERTERS ■ SYNCHRONOUS RECTIFICATION INTERNAL SCHEMATIC DIAGRAM TYPE V DSS R DS(on) ID STN2NE10 100 V < 0.4 Ω 2 A January 1999 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (VGS = 0) 100 V V DGR Drain- gate Voltage (RGS = 20 kΩ ) 100 V VGS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc = 25 oC2 A ID Drain Current (continuous) at Tc = 100 oC1 . 3 A IDM (•) Drain Current (pulsed) 8 A P tot Total Dissipation at Tc = 25 oC2 . 5 W Derating Factor 0.02 W/ oC dv/dt(1) Peak Diode Recovery voltage slope 6 V/ns Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC (•) Pulse width limited by safe operating area (1) ISD ≤ 7 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX New RDS (on) spec. starting from JULY 98 SOT-223

Thermal Resistance Junction-PC Board Max Thermal Resistance Junction-ambient Max (Surface Mounted) Maximum Lead Temperature For Soldering Purpose 260 oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) E AS Single Pulse Avalanche Energy (starting Tj = 25 oC, ID = IAR , VDD = 25 V) 20 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID = 250 µ A VGS = 0 100 V IDSS Zero Gate Voltage Drain Current (VGS = 0) V DS = Max Rating V DS = Max Rating Tc = 125 oC µ A µ A IGSS Gate-body Leakage Current (VDS = 0) V GS = ± 20 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold VoltageV DS = VGS ID = 250 µ A 234V R DS(on) Static Drain-source On Resistance V GS = 10 V ID = 1A 0.33 0.4 Ω ID(on) On State Drain Current VDS > ID(on) x RDS(on)max V GS = 10 V DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗) Forward Transconductance V DS > ID(on) x RDS(on)max ID = 1 A 1 1.8 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz VGS = 0 V 305 pF pF pF STN2NE10

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time V DD = 50 V ID = 35 A R G = 4.7 Ω VGS = 10 V (Resistive Load, see fig. 3) ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 80 V ID = 7 A VGS = 10 V 14 19 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 50 V ID = 3.5 A R G =4.7 Ω VGS = 10 V (Resistive Load, see fig. 3) ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V clamp = 16 V ID = 80 A R G = 4.7 Ω VGS = 10 V (Inductive Load, see fig. 5) ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) A A V SD (∗) Forward On Voltage I SD = 2 A VGS = 0 1.5 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 7 A di/dt = 100 A/µ s V DD = 30 V (see test circuit, fig. 5) 210 5.5 ns µ C A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area STN2NE10

DIM. mm mils e4 0.32 12.6 C CB E L a b f g c d P008B SOT-223 MECHANICAL DATA STN2NE10

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com STN2NE10