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DP8212,DP8212M DP8212 DP8212M 8-Bit Input/Output Port Literature Number: SNOSBP8A

DP8212/DP8212M 8-Bit Input/Output Port June 1988 DP8212/DP8212M 8-Bit Input/Output Port General Description The DP8212/DP8212M is an 8-bit input/output port con- tained in a standard 24-pin dual-in-line package. The device, which is fabricated using Schottky Bipolar technology, is part of National Semiconductor’s 8080A support family. The DP8212/DP8212M can be used to implement latches, gat- ed buffers, or multiplexers. Thus, all of the major peripheral and input/output functions of a microcomputer system can be implemented with this device. The DP8212/DP8212M includes an 8-bit latch with TRI-STATE É output buffers, and device selection and con- trol logic. Also included is a service request flip-flop for the generation and control of interrupts to the microprocessor.

Features

Y 8-Bit data latch and buffer Y Service request flip-flop for generation and control of interrupts Y 0.25 mA input load current Y TRI-STATE TTL output drive capability Y Outputs sink 15 mA Y Asynchronous latch clear Y 3.65V output for direct interface to INS8080A Y Reduces system package count by replacing buffers, latches, and multiplexers in microcomputer systems 8080A Microcomputer Family Block Diagram TL/F/6824–1 TRI-STATEÉ is a registered trademark of National Semiconductor Corp. C1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A. Obsolete

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Storage Temperature b65§Ct o a160§C All Output or Supply Voltages b0.5V to a7V All Input Voltages b1.0V to 5.5V Output Currents 125 mA Maximum Power Dissipation * at 25 §C Cavity Package 1903 mW Molded Package 2005 mW *Derate cavity package 12.7 mW/ §C above 25 §C; derate molded package 16.0 mW/ §C above 25 §C. Operating Conditions Min Max Units Supply Voltage (V CC) DP8212M 4.50 5.50 V DC DP8212 4.75 5.25 V DC Operating Temperaure (T A) DP8212M b55 a125 §C DP8212 0 a75 §C Note: Maximum ratings indicate limits beyond which perma- nent damage may occur. Continuous operation at these lim- its is not intended and should be limited to those conditions specified under DC electrical characteristics. Electrical Characteristics Min s TA s Max, Min s VCC s Max, unless otherwise noted Symbol Parameter Conditions Min Typ Max Units IF Input Load Current, VF e 0.45V b0.25 mASTB, DS2, CLR ,D I 1 –DI8 Inputs IF Input Load Current, MD Input V F e 0.45V b0.75 mA IF Input Load Current, DS1 Input V F e 0.45V b1.0 mA IR Input Leakage Current VR e VCC Max 10 mASTB, DS2, CLR ,D I 1 –DI8 Inputs IR Input Leakage Current, MD Input V R e VCC Max 30 mA IR Input Leakage Current, DS1 Input V R e VCC Max 40 mA VC Input Forward Voltage Clamp I C eb 5m A b1V VIL Input ‘‘Low’’ Voltage DP8212M 0.08 V DP8212 0.85 V VIH Input ‘‘High’’ Voltage 2.0 V VOL Output ‘‘Low’’ Voltage IOL e 10 mA DP8212M 0.45 V IOL e 15 mA DP8212 0.45 V VOH Output ‘‘High’’ Voltage IOH e 0.5 mA DP8212M 3.40 4.0 V IOH e 1.0 mA DP8212 3.65 4.0 V ISC Short-Circuit Output Current V O e 0V, V CC e 5V b15 b75 mA lIOl Output Leakage Current, High V O e 0.45V/VCC Max 20 mAImpedance State ICC Power Supply Current DP8212M 90 145 mA DP8212 90 130 mA Capacitance* F e 1 MHz, V BIAS e 2.5V, V CC e 5V, T A e 25§C Symbol Parameter Min Typ Max Units CIN DS1, MD Input Capacitance 9 12 pF CIN DS2, CLR , STB, DI 1 –DI8 Input Capacitance 5 9 pF COUT DO1–DO8 Output Capacitance 8 12 pF *This parameter is sampled and not 100% tested. Obsolete

Switching Characteristics Min s TA s Max, Min s VCC s Max Symbol Parameter Conditions DP8212M DP8212 Units Min Max Min Max tPW Pulse Width 40 30 ns tPD Data to Output Delay (Note 1) 30 30 ns tWE Write Enable to Output Delay (Note 1) 50 40 ns tSET Data Set-Up Time 20 15 ns tH Data Hold Time 30 20 ns tR Reset to Output Delay (Note 1) 55 40 ns tS Set to Output Delay (Note 1) 35 30 ns tE Output Enable/Disable Time (Note 2) 50 45 ns tC Clear to Output Delay (Note 1) 65 55 ns Note 1: CL e 30 pF Note 2: CL e 30 pF except for DP8212M tE (DISABLE) CL e 5p F Switching Conditions 1. Input Pulse Amplitude e 2.5V. 2. Input Rise and Fall Times e 5 ns. 3. Between 1V and 2V Measurements made at 1.5V with 15 mA & 30 pF Test Load. 4. C L includes jig and probe capacitance. 5. C L e 30 pF. 6. C L e 30 pF except for DP8212M t E (DISABLE) CL e 5p F Test Load TL/F/6824–2 Alternate Test Load (Refer to Timing Diagram) TL/F/6824–3 Obsolete

TL/F/6824–4 Obsolete

TL/F/6824–5 Obsolete

STB MD (DS 1#DS2) Data Out Equals 0 0 0 TRI-STATE 1 0 0 TRI-STATE 0 1 0 DATA LATCH 1 1 0 DATA LATCH 0 0 1 DATA LATCH 1 0 1 DATA IN 0 1 1 DATA IN 1 1 1 DATA IN CLR K resets data latch to the output low state. The data latch clock is level sensitive, a low level clock latches the data. Logic Table B CLR (DS1#DS2) STB Q* INT

0 RESET 0 0 0 1

10 K 10

*Internal Service Request flip-flop. Functional Pin Definitions The following describes the function of all the DP8212/ DP8212M input/output pins. Some of these descriptions reference internal circuits. INPUT SIGNALS Device Select (DS 1,D S 2): When DS 1 is low and DS 2 is high, the device is selected. The output buffers are enabled and the service request flip-flop is asynchronously reset (cleared) when the device is selected. Mode (MD): When high (output mode), the output buffers are enabled and the source of the data latch clock input is the device selection logic (DS 1 # DS2). When low (input mode), the state of the output buffers is determined by the device selection logic (DS 1 # DS2) and the source of the data latch clock input is the strobe (STB) input. Strobe (STB): Used as data latch clock input when the mode (MD) input is low (input mode). Also used to synchro- nously set the service request flip-flop, which is negative edge triggered. Data In (DI 1 –DI8): Eight-bit data input to the data latch, which consists of eight D-type flip-flops. Incorporating a lev- el sensitive clock while the data latch clock input is high, the Q output of each flip-flop follows the data input. When the clock input returns low, the data latch stores the data input. The clock input high overrides the clear (CLR ) input data latch reset. Clear (CLR ): When low, asynchronously resets (clears) the data latch and the service request flip-flop. The service re- quest flip-flop is in the non-interrupting state when reset. OUTPUT SIGNALS Interrupt (INT ): Goes low (interrupting state) when either the service request flip-flop is synchronously set by the strobe (STB) input or the device is selected. Data Out (DO 1 –DO8): Eight-bit data output of data buffers, which are TRI-STATE, non-inverting stages. These buffers have a common control line that either enables the buffers to transmit the data from the data latch outputs or disables the buffers by placing them in the high-impedance state. Connection Diagram Dual-In-Line Package TL/F/6824–6 Top View Order Number DP8212J, DP8212N or DP8212MJ See NS Package Number J24A or N24A Obsolete

Applications in Microcomputer Systems Gated Buffer (TRI-STATE) TL/F/6824–7 TL/F/6824–8 Interrupting Input Port TL/F/6824–9 Interrupt Instruction Port TL/F/6824–10 Obsolete

Applications in Microcomputer Systems (Continued) Output Port (with Hand-Shanking) TL/F/6824–11 INS8080A Status Latch TL/F/6824–12 Obsolete

Physical Dimensions inches (millimeters) Ceramic Dual-In-Line Package (J) Order Number DP8212J or DP8212MJ Obsolete

DP8212/DP8212M 8-Bit Input/Output Port Physical Dimensions inches (millimeters) (Continued) Molded Dual-In-Line Package (N) Order Number DP8212N LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can effectiveness. be reasonably expected to result in a significant injury to the user. National Semiconductor National Semiconductor National Semiconductor National Semiconductor Corporation Europe Hong Kong Ltd. Japan Ltd.

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Arlington, TX 76017 Email: cnjwge @ tevm2.nsc.com Ocean Centre, 5 Canton Rd. Fax: 81-043-299-2408 Tel: 1(800) 272-9959 Deutsch Tel: ( a49) 0-180-530 85 85 Tsimshatsui, Kowloon Fax: 1(800) 737-7018 English Tel: ( a49) 0-180-532 78 32 Hong Kong Fran3ais Tel: ( a49) 0-180-532 93 58 Tel: (852) 2737-1600 Italiano Tel: ( a49) 0-180-534 16 80 Fax: (852) 2736-9960 National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications. Obsolete

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