N2222

2N2222A STMICROELECTRONICS | Alldatasheet

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The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. INTERNAL SCHEMATIC DIAGRAM February 2003 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (IE = 0) 75 V V CEO Collector-Emitter Voltage (IB = 0) 40 V V EBO Emitter-Base Voltage (IC = 0) 6 V IC Collector Current 0.6 A ICM Collector Peak Current (tp < 5 ms) 0.8 A P tot Total Dissipation at Tamb ≤ 25 oC for 2N2219A for 2N2222A at TC ≤ 25 oC for 2N2219A for 2N2222A 0.8 0.5 1.8 W W W W Tstg Storage Temperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC TO-18 TO-39

Thermal Resistance Junction-Case Max Thermal Resistance Junction-Ambient Max 187.5 83.3 300 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) V CB = 60 V V CB = 60 V Tj = 150 oC nA µ A ICEX Collector Cut-off Current (VBE = -3V) V CE = 60 V 10 nA IBEX Base Cut-off Current (VBE = -3V) V CE = 60 V 20 nA IEBO Emitter Cut-off Current (IC = 0) V EB = 3 V 10 nA V (BR)CBO Collector-Base Breakdown Voltage (IE = 0) IC = 10 µA 75 V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (IB = 0) IC = 10 mA 40 V V (BR)EBO Emitter-Base Breakdown Voltage C = 0) IE = 10 µ A 6V V CE(sat)∗ Collector-Emitter Saturation Voltage IC = 150 mA IB = 15 mA IC = 500 mA IB = 50 mA 0.3 V V V BE(sat)∗ Base-Emitter Saturation Voltage IC = 150 mA IB = 15 mA IC = 500 mA IB = 50 mA 0.6 1.2 V V hFE ∗ DC Current Gain I C = 0.1 mA VCE = 10 V IC = 1 mA VCE = 10 V IC = 10 mA VCE = 10 V IC = 150 mA VCE = 10 V IC = 500 mA VCE = 10 V IC = 150 mA VCE = 1 V IC = 10 mA VCE = 10 V Tamb = -55 oC 100 300 hfe∗ Small Signal Current Gain IC = 1 mA VCE = 10 V f = 1KHz IC = 10 mA VCE = 10 V f = 1KHz 300 375 fT Transition Frequency I C = 20 mA VCE = 20 V f = 100 MHz

300 MHz

IC = 0 VEB = 0.5 V f = 100KHz 25 pF C CBO Collector-Base Capacitance IE = 0 VCB = 10 V f = 100 KHz 8 pF R e(hie) Real Part of Input Impedance IC = 20 mA VCE = 20 V f = 300MHz 60 Ω * Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % 2N2219A / 2N2222A

ELECTRICAL CHARACTERISTICS (continued) Symbol Parameter Test Conditions Min. Typ. Max. Unit NF Noise Figure I C = 0.1 mA VCE = 10 V f = 1KHz Rg = 1KΩ 4d B hie Input Impedance I C = 1 mA VCE = 10 V IC = 10 mA VCE = 10 V 0.25 1.25 kΩ kΩ hre Reverse Voltage Ratio IC = 1 mA VCE = 10 V IC = 10 mA VCE = 10 V 10-4 10-4 hoe Output Admittance I C = 1 mA VCE = 10 V IC = 10 mA VCE = 10 V 200 µ S µ S td∗∗ Delay Time V CC = 30 V IC = 150 mA IB1 = 15 mA VBB = -0.5 V 10 ns tr∗∗ Rise Time V CC = 30 V IC = 150 mA IB1 = 15 mA VBB = -0.5 V 25 ns ts∗∗ Storage Time V CC = 30 V IC = 150 mA IB1 = -IB2 = 15 mA 225 ns tf∗∗ Fall Time V CC = 30 V IC = 150 mA IB1 = -IB2 = 15 mA 60 ns rbb’ Cb’c Feedback Time Constant IC = 20 mA VCE = 20 V f = 31.8MHz 150 ps ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % ∗∗ See test circuit 2N2219A / 2N2222A

Test Circuit fot td, tr. PULSE GENERATOR : TO OSCILLOSCOPE tr ≤ 20 ns t r ≤ 5.0 ns PW ≤ 200 ns Z IN < 100 KΩ ZIN = 50 Ω C IN ≤ 12 pF Test Circuit fot td, tr. PULSE GENERATOR : TO OSCILLOSCOPE : PW ≈ 10 µst r < 5.0 ns ZIN = 50 Ω ZIN > 100 KΩ TC ≤ 5.0 ns C IN ≤ 12 pF 2N2219A / 2N2222A

DIM. mm inch A 12.7 0.500 B 0.49 0.019 D 5.3 0.208 E4 . 9 0 . 1 9 3 F 5.8 0.228 G 2.54 0.100 H1 . 2 0 . 0 4 7 I 1.16 0.045 L4 5 o 45o L G I D A F E B H C TO-18 MECHANICAL DATA 0016043 2N2219A / 2N2222A

DIM. mm inch A 12.7 0.500 B0 . 4 9 0 . 0 1 9 D6 . 6 0 . 2 6 0 E8 . 5 0 . 3 3 4 F9 . 4 0 . 3 7 0 G 5.08 0.200 H1 . 2 0 . 0 4 7 I0 . 9 0 . 0 3 5 L4 5 o (typ.) L G I D A F E B H P008B TO-39 MECHANICAL DATA 2N2219A / 2N2222A

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 2N2219A / 2N2222A