2N1909 MICROSEMI | Alldatasheet

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Technical content

Silicon Controlled Rectifiers —M Pp N [TY [6] V Dim. Inches Millimeter K Minimum Maximum Minimum Maximum Notes q A --- <== 1 B 1.050 1.060 26.67 26.92 across flats| E D 5.850 6.144 149.10 156.06 D E 6.850 7.3715 173.99 187.33 Fo .797 827 20.24 21.01 G 276 286 701 7.26 —_— J 425 499 10.80 12.67 2 [ | K 260 280 6.60 mM Dia. ——= st M500 600 12.70 15.24 U 4B c N 140 150 3.56 3.81 = —t Pon 2950 7.49 TO-209AA (10-94) Note 1: 1/2-20 UNF-3A Note 2: Full thread within 2 1/2 threads Microsemi Forward & Reverse Reverse Transient Catalog Number Repetitive Blocking Blocking . >n1909 5 5 e High dv/dt-200 V/usec. 2N1910 50 50 ©1600 Amperes surge current 2N1911 100 100 *Low forward on-state voltage 2N1912 150 150 ® Package conforming to TO-209AA 2N1913 200 200 outline 2N1914 250 250 . 2N1915, 300 300 ® Economical for general purpose phase 2N1916 400 400 control applications To specify dv/dt higher than 200V/usec., contact factory.

Electrical Characteristics

Max. RMS on-state current 'T(RMS) 110 Amps Te = 87°C Max. average on-state cur. 'T(AV) 70 Amps TC = 87°C Max. peak on-state voltage VIM 1.6 Volts 'TM = 220 A(peak) Max. holding current ty 200 mA Mox. peak one cycle surge current 'TsM 1600 A Tc = 87°C, 60 Hz Max. I2t capability for fusing 2t 10,624A2S t = 83 ms Thermal and Mechanical Characteristics Operating junction temp range Ty -65°C to 125°C Storage temperature range TSTG -65°C to 150°C Maximum thermal resistance Reuc 0.40°C/W Junction to case Typical thermal resistance (greased) @CcS 0.20°C/W Case to sink Mounting torque 100-130 inch pounds Weight 3.6 ounces (102.0 grams) typical . LAWRENCE ° 6 Lake Street Lawrence, MA 01841 ~24- MICFOSCIN BGs ten O24 07 Bon FAX: (978) 689-0803 www.microsemi.com

Critical rate of rise of on-state current (note 1) _—di/dt 100A /usec. Ty = 125°C Typical delay time (note 1) td 3.0 usec. 5 Typical circuit commuted turn-off time (note 2) tg 100 usec. TJ = 125°C Note 1: 'TM = 50A, YD = VDRM. YGT = 12V open circuit, 20 ohm-0.1 usec. rise time Note 2: 'TM = 50A, di/dt = 5A/usec., VR during turn-off interval = SOV min., reapplied dv/dt = 20V/usec., linear to rated VDRM, VGT = OV Triggering Max. gate voltage to trigger Vet 3.0V Ty = 25°C Max. nontriggering gate voltage Veo 0.25V Ty = 125°C Max. gate current to trigger ‘GT 100mA Ty = 25°C Max. peak gate power Pom 15W Average gate power PG(av) 3.0W tp = 10 usec. Max. peak gate current ‘CM 4.0A Max. peak gate voltage (forward) Vom 10V Max. peak gate voltage (reverse) VoM 5.0V Blocking Max. leakage current 'DRM,| RRM 10mA Ty =125°C & VORM,VRRM Max. reverse leakage 'DRM,I RRM 100uA Vy =25°C & VDRM,YRRM Critical rate of rise of off-state voltage dv/dt 200V/usec. Ty =125°C 04-24-07 Rev. 1

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600 Th ATT 0 10 20 30 40 50 60 70 80 90 100

400 Ay Average On-State Current — Amperes

S 00 J_/\\ Transient Thermal Impedance * odedel fel FEE LLL LL) © es CCT a 2 io lt2skef_A 25P 06 g 100 rr ee g ae a | & SOO S05 eo AEE toe CEE Pad a A ‘os LU 2 oe LEI TT 5 Y PAS ee CEI PTT TTT TT TTT TT | ete ain s 2 seo, eT AT ETAT) de eat 2 9 2 CCl TMT TL TILT I 8 12 16 20 24 28 32 36 001 oO ot 10 10 100 Instantaneous On-State Voltage — Volts Time in Seconds Figure 2 Forward Current Derating § 130 PROT NEE ® oo + NNW Sot | TE INNN TT © 99 INN Poe ETE =z 80 co ttt tT TTT 2 cot Lt dallecl sok tho bel | | 0 10 20 30 40 50 60 70 80 90 100 Average On-State Current - Amperes 04-24-07 Rev. 1