N13T1

N13T1 NEC | Alldatasheet

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N13T1, N13T2 PROGRAMMABLE UNIJUNCTION TRANSISTOR Silicon Planar Type N-gate Thyristor ‘The N13T1, T2 are planar type PUT for the industrial use. Outline Drawing (Unit : mm) ‘The designer can select the resistance values to program the 5 max characteristics such as Rag, 7, lv, and Ipto meet his parti- cular needs. Application of the N13T includes thysistor trigger, timing 3 circuits, oscillator, pulse generator, sensing circuit and other ra i FEATURES og “Hl | | 6 ‘© N gate SCR which has high gate sensitivity. = © Low leakage current. vats) | © Wide changeability Rap. 1. Ip. lv — « © Low in ly and small power operation. lead connection in © Fast, High Energy Trigger Pulse. 1 anode pied 3, cathode MAXIMUM ALLOWABLE RATINGS (Ta = 25°C) [Siesta taasvonss | yee —- — —} + OC Gate Current + Io i 320 mA Peak Anode Recurrent “2 7 a Pulse width 100s, duty 1% ITRM 1.0 A ___ Pulse width 20us, duty 1% i ae 20 A Operation Ambient Temperature Range Topt Junction Temperature Ty 125 °c Capacitive Discharge Power *3 E 250 “Note: Please refer to Application Note No. 3:PUT application. = +1 Derate currents ang powers 1%/°C above 26°C +3 E = 1/2 CV" capacitor discharge energy no current limiting, *2 Rectangular weve. 148

N13T1,N13T2 NEC aecrnon vevice ELECTRICAL CHARACTERISTICS (Ta = 25°C) Items | symbot 7 Fig. No. | Type No. tye. | MAX Peak Current Ro = IM2Q Tt Fig.1 Nit | | 2 p | Fig.2, Fig.3 | NI3T2 | 0.18 A —— “ Fig.6 NI3T1 5 (Vs=10V) Rg = 10K s c Fig.9 ni3zt2_ | | 10 nisti | 02 16 Offset Volt Rc = Ma on | oe ve («tC nist2_ | 02 os | y - nist1 | 02 06 Vs=10V) Rg = 10K. Fig! 1 vs s ig10 nigT2 | 02 06 71 50 Valley Current. Rg = 1M Fig.1 N13 youn seme \\ Fig.4. Fig. | _N13T2 25 uA lv Fig.7 N13T1 7O | Vg =10V) Ag = 10K: : Vs ) s 2 Fig | niat2 | 25 Gate-Anode Leakage Current ir Fig. {& Opens 40) “* we 1, os pot | Gate-Cathode Leakage Current 4 {A-K Short, Vs = 40} |___ Iexs Fig 12 o3 | 100 | ma Forward Voltage ie = 50mA} Ve Fig. Fig.17 H 1 15 v ie = SOMA Z a ~ Pulse Out-put Voltage | 1 (v= 20V. C= 0.2uF) ' Vo Fig.14, Fig.15 | | 6 10 v Pulse Voltage Rate of Rise i rs _ T r (V = 20V, C= 0.2uF) —_ Fag. a ed Fig. 1 Definition of Electrical Characteristic a Ri u RoR, vy By i vate“ la ty : ot —_] Te (ta) Equivalent UJT which is (1b) The definition of equivalent {1c) Characteristic model of connected Program resist cireuit of (1a) and VS. AG. VA-IA aod the detinivion of ance. measurement point | ; re yg v 1008 Hv 7 Le 4 ! rarer Vaan a 7 1oo0pF mcr “fo-u-T ae kb (Id) Vo, tr measurement circuit, (le) The definition of output (1f) Measurement method of IP. pulse wave and measurement vet. WV point. (Please reter to Application NoteNo 3} 149 ;

NEC ascrron oevice N13T1,N13T2 Fig. 2 N13T1 Ip-RG Typical Characteristic (VS=10V1 Fig. 3 N13T2 IP-RG Typical Characteristic (VS=10V1 ) — er 0S aay aii anit amma mem ern ioe ee |

3 Sea s Seta

3 meses a ae Saat Ganneae 2 [SE +4 <a hl ook Ul voided SWE | a acest esas eet eeraniciee enti bop ae Joye ee | ooo L LIM TE TE TTT om LUCIE PT TTT i 10 1 1000 70000 T TF 18 1900 To000 Gate Bas Resatance Fi. tke: Gate Bas Ressrance Re th:) Fig. 4 N13T1 1y-RG Typical Characteristic Fig. 5 ly -RG Typical Characteristic 1 a a ES ea aed Jy beh EE Ears or | veo} LI. oe

5 RS BSHE TR | eS fe Se es

2 SS Oe SSS > SRO

: SRG Seat eee (Cog SS oe A oes ae a a (COC a (OEE TET 1 1 06 "000 T0090 1 ra 100 100 ‘0c00 Gate Bas Ressrance Re th: Gate Bias Resstance Rh! Fig. 6 1P—Ta-AG Typicel Characterisve IVS=10V) Fig, 7 Wy —Te-RG Typical Characteristic (VS=10V) a 1 a oe ee a a SS=S>S=>=S==Sa === SS SS peseese cee Sp Se eee ee) ee

2 SS SS

= See a. » MEXYL 100 || : SSS SSS pe eee

3 SSeS SS

ene ae a | ooLttof tp ty it | iE PP | Ey 0 = Ti0 19 0 7 100 Ampent Temperature Ta (°C) Ambient Temperature Ta {°C} 150

N13T1,N13T2 NEC aectronvevice —_ ee SS —S= =. i S| : 1009. woh —— | i a ee oa Za —— ony & 10 15 20 25 20 Fig. 10 V--RG~Ta Typical Characteristic (VS=10V) Fig. 11. Vy—Ta—AG Typical Characteristic (Vs=10V) uA ae 1 aailliimatts ma ~L++—,++- ol ET tog Re + : = oa | il Ltt Sas ie a gg z | SS ee 2 | ¥ os : eee ; = > aa sa 3 seat Tl HE Se 1 10 100 1000 10000 —50 O +50 +100 +150 Fig. 12 lleak—Ta Typical Characteristic (Vg=40V) Fig. 13 | seq)-P + W Maximum Rating ” ee a re ee Pe a Pt oN i a a 7 | = ST norms, Se taco “| Zz Se 151

NEC asctnon vevece N13T1,N13T2 Fig. 14 Vo —C—V Typical Characteristic Fig. 15 Vo —V-C Typical Rating OME SC:. PT Co) tee eet 8 | 2 4 Kooy | A 6p 5<((/ Mi a : 2 é Za all ttt é1 — ae OI: | pee & Ceti | ° = Pei TM = Emm a

00010003 O01 003 ot 03 a 3 10 Supply Voltage ¥ iv)

Electostane Capacity C (uF) Fig, 16 erating Wave Fig. 17 IF—VE Twpical Characteristic 120) 1000, [Pi SS ‘TOON , RR Eg & \\ Fol | | Se g Pee rr yi] Pear) s & Bees eee eee PTO NG] | BS 32 a . £ FLOAT Ee a0 EEO SERRA HET TT ET |) Geer A LUTE TT TT Og map 2900 HS F808 FIG F120 05 7 ro 20 ambient Temperature Ta (*) Feenars Votage ¥) Fig. 18 a [Pca] Sc When the N13T1 is usados 8 Ngote ;.. “SCR” Connect Cg and Figa as Fig 152

N13T1,N13T2 NEC azcrron sevice Approximate Design Equations for Timer } =O. =f, vee Ve =a Rp’ Voc + Vt Cr a: = Ietieak) + IP <1 TTNT In" avec + Vr Re Ry ° Vec ye -—f = "Ri + Ra cr n> Vee -V, cc — VP \\ Nec —\\ ICtiak) + Ip <= Approximate Design Equations for Relaxation Oscillator circuit t= ivew 1 R; vec Ri 31 vp = Al. vecev. N = P= aay ' VectVt Iciteak) + 1p <1 cr a i<lv TMT In avec + Vr_-W Veo-Vv Rr B: = fs = TR + Re o my Ictiegk) + Ip <YE= VE a cea Ay Vee -Vv ov <1, a SY 153