MX043J MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Harris FSC260R die
  • total dose: 100 kRAD(Si) within pre-radiation parameter limits
  • dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS typical
  • dose rate: 2 x 1012 RAD(Si)/sec @ ID ≤ IDM typical
  • neutron: 1013 neutrons/cm2 within pre-radiation parameter limits
  • photocurrent: 17 nA/RAD(Si)/sec typical
  • rated Safe Operating Area Curve for Single event Effects
  • rugged polysilicon gate cell structure with ultrafast body diode
  • low inductance surface mount power package available with “J-leads” (MX043J) or “gullwing-leads” (MX043G)
  • very low thermal resistance
  • reverse polarity available upon request add suffix “R”st MX043J MX043G

200 Volts

44 Amps

DESCRIPTION SYMBOL MAX. UNIT Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C BVDSS 200 Volts Drain-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ BVDGR 200 Volts Continuous Gate-to-Source Voltage VGS +/-20 Volts Transient Gate-to-Source Voltage VGSM +/-30 Volts Continuous Drain Current Tj= 25°C Tj= 100°C ID25 ID100 Amps Peak Drain Current, pulse width limited by TJmax IDM 132 Amps Repetitive Avalanche Current IAR 44 Amps Repetitive Avalanche Energy EAR tbd mJ Single Pulse Avalanche Energy EAS tbd mJ Power Dissipation PD 300 Watts Junction Temperature Range Tj -55 to +125 °C Storage Temperature Range Tstg -55 to +125 °C Continuous Source Current (Body Diode) IS 44 Amps Pulse Source Current (Body Diode) ISM 132 Amps Thermal Resistance, Junction to Case θJC 0.25 °C/W Weight - grams SINGLE EVENT Ion Species typical LET (MeV/mg/cm) typical range (µ) VGS VDSmax EFFECTS Ni 26 43 -20V 200V SAFE Br 37 36 -5V 200V OPERATING Br 37 36 -10V 160V AREA Br 37 36 -15V 100V (SEESOA) Br 37 36 -20V 40V Maximum Ratings @ 25°C (unless otherwise specified) Datasheet# MSC0857 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET Notes (1) Pulse test, t £ 300 m s, duty cycle d £ 2% (2) Microsemi Corp. does not manufacture the mosfet die; contact company for details.

DESCRIPTION SYMBOL CONDITIONS MIN TYP. MAX UNIT Drain-to-Source Breakdown Voltage (Gate Shorted to Source) BVDSS V GS = 0 V, ID = 1 mA 200 V Temperature Coefficient of the Drain-to-Source Breakdown Voltage ΔBVDSS/ΔTJ tbd V/ °C Gate Threshold Voltage V GS(th) V DS = V GS, ID = 1 mA, T J = 25°C T J = 125°C T J = -55°C 1.5 0.5 4.0 5.0 V V V Gate-to-Source Leakage Current IGSS V GS = ± 20 VDC, V DS = 0 T J = 25°C T J = 125°C ±100 ±200 nA Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) IDSS V DS =0.8•BVDSS TJ = 25°C V GS = 0 V T J = 125°C 250 µA µA Static Drain-to-Source On-State Resistance (1) RDS(on) V GS= 12V, ID= 28A T J = 25°C I D= 25A T J = 125°C 0.043 0.050 0.093 Ω Ω Forward Transconductance (1) gfs V DS ≥ 10 V; ID = 50 A 26 32 S Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss V GS = 0 V, V DS = 25 V, f = 1 MHz 4400 900 280 pF Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) tr td(off) tf V GS = 12 V, V DS = 100 V, ID = 44 A, RG = 2.35 Ω 100 ns Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Qg(on) Qgs Qgd V GS = 12 V, V DS = 100V, ID = 44 A 160 180 nC Body Diode Forward Voltage (1) V SD IF = IS, V GS = 0 V 0.6 - 1.8 V Reverse Recovery Time (Body Diode) trr IF = 10 A, - di/dt = 100 A/µs, TJ =25 °C 560 ns Electrical Parameters @ 25°C (unless otherwise specified) MX043J MX043G Mechanical Outline ShelFit™

100% KND (Known-Good-Die) SCREENING a. 100% die probe at Tambient = 25 °C for BVDSS, VGS th, IDSS, IGSS, VSD, RDSon b. 100% Visual Inspection i.a.w. method 2072 of MIL-STD-750 DIE ELEMENT EVALUATION a. Wafer Lot Evaluation Testing (WLAT) i.a.w. method 5001 of MIL-STD-750, including SEM b. Unclamped Inductive Switching (IAS) i.a.w. method 3470 of MIL-STD-750 at VGS peak= 15 V, L= 100 µH, I AS= 132 A c. Gate Stress Test for 250 µs at VGS= 30 Vdc. VGS= 16 V and VDS= 160 V g. Final DC Electrical Testing at Tambient = 25 °C, 125 °C and -55°C h. Temperature Cycling i.a.w. method 1051 of MIL-STD-750, 100 cycles, -55 °C to +150 °C i. Group A Electrical Testing including dynamic parameters and VDS= 160 V k. Final DC Electrical Testing at Tambient = 25 °C, 125 °C and -55°C l. Die Attach Evaluation i.a.w. method 2017 of MIL-STD-750 m. Bond Strength Evaluation i.a.w. 2037 of MIL-STD-750 RADIATION EVALUATION Total Dose Irradiation i.a.w. method 1019 of MIL-STD-750, dose= 100 kRAD, Drain shorted to Source, VGS= 10V Total Dose Irradiation i.a.w. method 1019 of MIL-STD-750, dose= 100 kRAD, Gate shorted to Source, VDS= 160V Evaluation criteria: no degradation of the DC electrical parameters exceeding the data sheet limits allowed after total dose irradiation.

100% SCREENING a. Internal Visual (Precap) Inspection i.a.w. method 2069 and 2072 of MIL-STD-750 b. Temperature Cycling i.a.w. method 1051 of MIL-STD-750, 10 cycles, -55 °C to +125 °C c. Thermal Response i.a.w. method 3161 of MIL-STD-750 VGS= 16 V VDS= 160 V f. Final electrical Testing i.a.w. this data sheet (100% DC parameters @ 25 °C and sample (22/0) testing for dynamic parameters and DC parameters @ temperature extremes) QUALIFICATION INSPECTION a. Thermal Resistance i.a.w. method 3161 of MIL-STD-750 - sample size= 10 devices/0 rejects b. Solderability i.a.w. method 2026 of MIL-STD-750 - sample size= 10 devices/0 rejects c. Temperature Cycling i.a.w. method 1051 of MIL-STD-750, 200 cycles, -55 °C to +125 °C - sample size 10 devices/0 rejects d. Intermittent Operation Life i.a.w. method 1042D of MIL-STD-750 with ΔTj= 75 °C for 2000 cycles (monitoring thermal response shift) - sample= 25 devices/0 rejects g. Safe Operating Area i.a.w. method 3474 of MIL-STD-750 (monitoring thermal response shift) - sample size= 10 devices/0 rejects h. Shock i.a.w. method 2016 of MIL-STD-750 - sample size= 10 devices/0 rejects i. Vibration i.a.w. method 2056 of MIL-STD-750 - sample size= 10 devices/0 rejects j. Acceleration i.a.w. method 2006 of MIL-STD-750 - sample size= 10 devices/0 rejects k. X-ray, one view of the die attach area (Oz axis) - sample= 10 devices/0 rejects l. Humidity ????? - sample size= 5 devices/0 rejects