MTY30N50E

MTY30N50E ONSEMI | Alldatasheet

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 Semiconductor Components Industries, LLC, 2000 September, 2004 − Rev. XXX

1 Publication Order Number:

30 Amps, 500 Volts

N−Channel TO−264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

• Robust High V oltage Termination
• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage VDSS 500 Vdc Drain−Gate Voltage (RGS = 1 MΩ ) VDGR 500 Vdc Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current − Continuous @ TC = 25°C Drain Current − Single Pulse (tp ≤ 10 µs) ID IDM Adc Apk Total Power Dissipation Derate above 25°C PD 300 2.38 Watts W/°C Operating and Storage Temperature RangeTJ, Tstg −55 to 150 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 30 Apk, L = 10 mH, RG = 25 Ω ) EAS 3000 mJ Thermal Resistance − Junction to Case Thermal Resistance − Junction to Ambient R θJC R θJA 0.42 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C

30 AMPERES

500 VOLTS

R DS(on) = 150 mΩ Device Package Shipping

ORDERING INFORMATION

MTY30N50E TO−264 25 Units/Rail http://onsemi.com Preferred devices are recommended choices for future use and best overall value. LL = Location Code Y = Year WW = Work Week MARKING DIAGRAM & PIN ASSIGNMENT D G TO−264 CASE 340G Style 1 MTY30N50E N−Channel S LLYWW 2 3 Gate Source Drain

http://onsemi.com ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0, ID = 250 µA) Temperature Coefficient (Positive) V(BR)DSS 500 566 Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 500 Vdc, VGS = 0 Vdc) (VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS 200 µAdc Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS − − 100 nAdc ON CHARACTERISTICS (Note 1.) Gate Threshold Voltage (VDS = VGS , ID = 250 µAdc) Threshold Temperature Coefficient (Negative) VGS(th) Vdc mV/°C Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 15 Adc) R DS(on) − − 0.15 Ohm Drain−Source On−Voltage (VGS = 10 Vdc) (ID = 30 Adc) (ID = 15 Adc, TJ = 125°C) VDS(on) 4.1 Vdc Forward Transconductance (VDS = 15 Vdc, ID = 15 Adc) gFS 17 − − mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 Vd V 0V d C iss − 7200 10080 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1 MHz) C oss − 775 1200 Reverse Transfer Capacitance f = 1 MHz) C rss − 120 250 SWITCHING CHARACTERISTICS (Note 2.) Turn−On Delay Time td(on) − 32 60 ns Rise Time (VDD = 250 Vdc, ID = 30 Adc, VGS =1 0V d c tr − 105 175 Turn−Off Delay Time VGS = 10 Vdc, R G = 4.7 Ω ) td(off) − 160 275 Fall Time R G 4.7 Ω ) tf − 115 200 Gate Charge (S Fi 8) Q T − 235 350 nC (See Figure 8) (VDS = 400 Vdc, ID = 30 Adc, Q 1 − 35 −(VDS 400 Vdc, ID 30 Adc, VGS = 10 Vdc) Q 2 − 110 − Q 3 − 65 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 30 Adc, VGS = 0 Vdc) (IS = 30 Adc, VGS = 0 Vdc, TJ = 125°C) VSD 0.95 0.88 1.2 Vdc Reverse Recovery Time (S Fi 14) trr − 485 − ns (See Figure 14) (I 30 Adc V 0 Vdc ta − 312 − (IS = 30 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) tb − 173 − Reverse Recovery Stored Charge dIS/dt = 100 A/µs) Q RR − 8.2 − µC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25″ from package to center of die) LD − 4.5 − nH Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) LS − 13 − nH 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature.

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current Figure 5. On−Resistance Variation with Figure 6. Drain−To−Source Leakage

4 V 25°C

5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 10. Diode Forward Voltage versus Current Figure 9. Resistive Switching Time Figure 8. Gate Charge versus Gate−to−Source Voltage assumed to equal the values indicated.

http://onsemi.com PACKAGE DIMENSIONS STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE DIM A MIN MAX MIN MAX INCHES 28.0 29.0 1.102 1.142 MILLIMETERS B 19.3 20.3 0.760 0.800 C 4.7 5.3 0.185 0.209 D 0.93 1.48 0.037 0.058 E 1.9 2.1 0.075 0.083 F 2.2 2.4 0.087 0.102 G 5.45 BSC 0.215 BSC H 2.6 3.0 0.102 0.118 J 0.43 0.78 0.017 0.031 K 17.6 18.8 0.693 0.740 L 11.0 11.4 0.433 0.449 N 3.95 4.75 0.156 0.187 P 2.2 2.6 0.087 0.102 Q 3.1 3.5 0.122 0.137 R 2.15 2.35 0.085 0.093 U 6.1 6.5 0.240 0.256 W 2.8 3.2 0.110 0.125 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 0.25 (0.010) M TB M J R H N U L P A K C E F D G W2 PL 3 PL 0.25 (0.010) M YQ S 123 −B− −Q− −Y− −T− TO−264 CASE 340G−02 ISSUE H

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