MTY100N10E

MTY100N10E ONSEMI | Alldatasheet

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© Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 4

1 Publication Order Number:

100 Amps, 100 Volts

N−Channel TO−264 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain−to−source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage VDSS 100 Vdc Drain−Gate Voltage (RGS = 1 MΩ) VDGR 100 Vdc Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) VGS VGSM ±20 ±40 Vdc Vpk Drain Current − Continuous @ TC = 25°C Drain Current − Single Pulse (tp ≤ 10 μs) ID IDM 100 300 Adc Apk Total Power Dissipation Derate above 25°C PD 300 2.38 Watts W/°C Operating and Storage Temperature Range TJ, Tstg −55 to 150 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 80 Vdc, VGS = 10 Vdc, Peak IL = 100 Apk, L = 0.1 mH, RG = 25 Ω ) EAS 250 mJ Thermal Resistance − Junction to Case Thermal Resistance − Junction to Ambient RθJC RθJA 0.42 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C

100 AMPERES

100 VOLTS

RDS(on) = 11 mΩ Device Package Shipping

ORDERING INFORMATION

MTY100N10E TO −264 25 Units/Rail http://onsemi.com Preferred devices are recommended choices for future use and best overall value. LL = Location Code Y = Year WW = Work Week MARKING DIAGRAM & PIN ASSIGNMENT D G TO−264 CASE 340G Style 1 MTY100N10E N−Channel S LLYWW 2 3 Gate Source Drain

http://onsemi.com ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0, ID = 250 μA) Temperature Coefficient (Positive) V(BR)DSS 100 115 Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 100 Vdc, VGS = 0 Vdc) (VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS 200 μAdc Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0) IGSS − − 100 nAdc ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (VDS = VGS, ID = 250 μAdc) Threshold Temperature Coefficient (Negative) VGS(th) 2.0 Vdc mV/°C Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 50 Adc) RDS(on) − − 0.011 Ohm Drain−Source On−Voltage (VGS = 10 Vdc) (ID = 100 Adc) (ID = 50 Adc, TJ = 125°C) VDS(on) 1.0 1.2 1.0 Vdc Forward Transconductance (VDS = 6 Vdc, ID = 50 Adc) gFS 30 49 − mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1 MHz) Ciss − 7600 10640 pF Output Capacitance Coss − 3300 4620 Reverse Transfer Capacitance Crss − 1200 2400 SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time (VDD = 50 Vdc, ID = 100 Adc, VGS = 10 Vdc, RG = 9.1 Ω) td(on) − 48 96 ns Rise Time tr − 490 980 Turn−Off Delay Time td(off) − 186 372 Fall Time tf − 384 768 Gate Charge (See Figure 8) (VDS = 80 Vdc, ID = 100 Adc, VGS = 10 Vdc) QT − 270 378 nC Q1 − 50 − Q2 − 150 − Q3 − 118 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 100 Adc, VGS = 0 Vdc) (IS = 100 Adc, VGS = 0 Vdc, TJ = 125°C) VSD 0.9 1.2 Vdc Reverse Recovery Time (See Figure 14) (IS = 100 Adc, VGS = 0 Vdc, dIS/dt = 100 A/μs) trr − 145 − ns ta − 90 − tb − 55 − Reverse Recovery Stored Charge QRR − 2.34 − μC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25″ from package to center of die) LD − 4.5 − nH Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) LS − 13 − nH 1. Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature.

be charged by current from the generator. and Q2 and VGSP are read from the gate charge curve. on−state when calculating td(off). is difficult to measure and, consequently, is not specified. maintain a value of unity regardless of the switching speed. however, snubbing reduces switching losses. Figure 7. Capacitance Variation

5 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 8. Gate Charge versus Gate−to−Source Voltage Figure 9. Resistive Switching Time Figure 10. Diode Forward Voltage versus Current assumed to equal the values indicated.

http://onsemi.com PACKAGE DIMENSIONS STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE DIM A MIN MAX MIN MAX INCHES 28.0 29.0 1.102 1.142 MILLIMETERS B 19.3 20.3 0.760 0.800 C 4.7 5.3 0.185 0.209 D 0.93 1.48 0.037 0.058 E 1.9 2.1 0.075 0.083 F 2.2 2.4 0.087 0.102 G 5.45 BSC 0.215 BSC H 2.6 3.0 0.102 0.118 J 0.43 0.78 0.017 0.031 K 17.6 18.8 0.693 0.740 L 11.0 11.4 0.433 0.449 N 3.95 4.75 0.156 0.187 P 2.2 2.6 0.087 0.102 Q 3.1 3.5 0.122 0.137 R 2.15 2.35 0.085 0.093 U 6.1 6.5 0.240 0.256 W 2.8 3.2 0.110 0.125 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 0.25 (0.010) M TB M J R H N U L P A K C E F D G W2 PL 3 PL 0.25 (0.010) M YQ S 123 −B− −Q− −Y− −T− TO−264 CASE 340G−02 ISSUE H ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 MTY100N10E/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative