MTW8N60E ONSEMI | Alldatasheet

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 Semiconductor Components Industries, LLC, 2000 September, 2004 − Rev. XXX

1 Publication Order Number:

8 Amps, 600 Volts

N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

  • Robust High V oltage Termination
  • Avalanche Energy Specified
  • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
  • Diode is Characterized for Use in Bridge Circuits
  • IDSS and VDS(on) Specified at Elevated Temperature
  • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage VDSS 600 Vdc Drain−Gate Voltage (RGS = 1.0 MΩ ) VDGR 600 Vdc Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 µs) ID ID IDM 8.0 6.4 Adc Apk Total Power Dissipation Derate above 25°C PD 180 1.43 Watts W/°C Operating and Storage Temperature RangeTJ, Tstg −55 to 150 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL = 24 Apk, L = 3.0 mH, RG = 25 Ω ) EAS 864 mJ Thermal Resistance − Junction to Case Thermal Resistance − Junction to Ambient R θJC R θJA 0.70 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C Device Package Shipping

ORDERING INFORMATION

MTW8N60E TO−247 30 Units/Rail Preferred devices are recommended choices for future use and best overall value. LL = Location Code Y = Year WW = Work Week MTW8N60E LLYWW http://onsemi.com MARKING DIAGRAM & PIN ASSIGNMENT D G TO−247AE CASE 340K Style 1 N−Channel S

8 AMPERES

600 VOLTS

R DS(on) = 550 mΩ 2 3 Gate Source Drain Drain

http://onsemi.com ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) V(BR)DSS 600 695 Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 600 Vdc, VGS = 0 Vdc) (VDS = 600 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS 100 µAdc Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS − − 100 nAdc ON CHARACTERISTICS (Note 1.) Gate Threshold Voltage (VDS = VGS , ID = 250 µAdc) Temperature Coefficient (Negative) VGS(th) 2.0 3.0 7.0 4.0 Vdc mV/°C Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 4.0 Adc) R DS(on) − 0.46 0.55 Ohm Drain−Source On−Voltage (VGS = 10 Vdc) (ID = 8.0 Adc) (ID = 4.0 Adc, TJ = 125°C) VDS(on) 3.2 4.8 4.6 Vdc Forward Transconductance (VDS = 15 Vdc, ID = 4.0 Adc) gFS 4.0 8.5 − mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 Vd V 0V d C iss − 2480 3470 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) C oss − 247 346 Reverse Transfer Capacitance f = 1.0 MHz) C rss − 56 120 SWITCHING CHARACTERISTICS (Note 2.) Turn−On Delay Time td(on) − 23.6 50 ns Rise Time (VDD = 300 Vdc, ID = 8.0 Adc, VGS =1 0V d c tr − 37.6 70 Turn−Off Delay Time VGS = 10 Vdc, R G = 9.1 Ω ) td(off) − 80 170 Fall Time R G 9.1 Ω ) tf − 48 95 Gate Charge (See Figure 8) Q T − 67 100 nC (VDS = 300 Vdc, ID = 8.0 Adc, VGS = 10 Vdc) Q 1 − 17 − VGS = 10 Vdc) Q 2 − 26 − Q 3 − 27 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (Note 1.) (IS = 8.0 Adc, VGS = 0 Vdc) (IS = 8.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD 0.829 0.71 1.1 Vdc Reverse Recovery Time (S Fi 14) trr − 381 − ns (See Figure 14) (I 8 0 Adc V 0 Vdc ta − 225 − (IS = 8.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) tb − 156 − Reverse Recovery Stored Charge dIS/dt = 100 A/µs) Q RR − 4.61 − µC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25″ from package to center of die) LD − 4.5 − nH Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) LS − 13 − nH 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature.

http://onsemi.com PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN R P A K V F D G U L E0.25 (0.010) M TB M 0.25 (0.010) M YQ S J H C 123 −T− −B− −Y− −Q− DIM MIN MAX MIN MAX INCHESMILLIMETERS A 19.7 20.3 0.776 0.799 B 15.3 15.9 0.602 0.626 C 4.7 5.3 0.185 0.209 D 1.0 1.4 0.039 0.055 E 1.27 REF 0.050 REF F 2.0 2.4 0.079 0.094 G 5.5 BSC 0.216 BSC H 2.2 2.6 0.087 0.102 J 0.4 0.8 0.016 0.031 K 14.2 14.8 0.559 0.583 L 5.5 NOM 0.217 NOM P 3.7 4.3 0.146 0.169 Q 3.55 3.65 0.140 0.144 R 5.0 NOM 0.197 NOM U 5.5 BSC 0.217 BSC V 3.0 3.4 0.118 0.134 TO−247 CASE 340K−01 ISSUE C

http://onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION CENTRAL/SOUTH AMERICA: Spanish Phone: 303−308−7143 (Mon−Fri 8:00am to 5:00pm MST) Email: ONlit−spanish@hibbertco.com Toll−Free from Mexico: Dial 01−800−288−2872 for Access − then Dial 866−297−9322 ASIA/PACIFIC: LDC for ON Semiconductor − Asia Support Phone : 303−675−2121 (Tue−Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001−800−4422−3781 Email: ONlit−asia@hibbertco.com JAPAN : ON Semiconductor, Japan Customer Focus Center 4−32−1 Nishi−Gotanda, Shinagawa−ku, Tokyo, Japan 141−0031 Phone : 81−3−5740−2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. MTW8N60E/D NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303−675−2167 or 800−344−3810 Toll Free USA/Canada N. American Technical Support: 800−282−9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor − European Support German Phone : (+1) 303−308−7140 (Mon−Fri 2:30pm to 7:00pm CET) Email: ONlit−german@hibbertco.com French Phone : (+1) 303−308−7141 (Mon−Fri 2:00pm to 7:00pm CET) Email: ONlit−french@hibbertco.com English Phone: (+1) 303−308−7142 (Mon−Fri 12:00pm to 5:00pm GMT) Email: ONlit@hibbertco.com EUROPEAN TOLL−FREE ACCESS*: 00−800−4422−3781 *Available from Germany, France, Italy, UK, Ireland