MTW8N60E MOTOROLA | Alldatasheet

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1Motorola TMOS Power MOSFET Transistor Device Data /C0068/C0101/C0115/C0105/C0103/C0110/C0101/C0114/C0039/C0115 /C0068/C0097/C0116/C0097 /C0083/C0104/C0101/C0101/C0116 /C0084/C0077/C0079/C0083 /C0069/C0045/C0070/C0069/C0084/C0046 /C0080/C0111/C0119/C0101/C0114 /C0070/C0105/C0101/C0108/C0100 /C0069/C0102/C0102/C0101/C0099/C0116 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114 /C0084/C0079/C0045/C0050/C0052/C0055 /C0119/C0105/C0116/C0104 /C0073/C0115/C0111/C0108/C0097/C0116/C0101/C0100 /C0077/C0111/C0117/C0110/C0116/C0105/C0110/C0103 /C0072/C0111/C0108/C0101 N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

  • Robust High Voltage Termination
  • Avalanche Energy Specified
  • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
  • Diode is Characterized for Use in Bridge Circuits
  • IDSS and VDS(on) Specified at Elevated Temperature
  • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–Source Voltage VDSS 600 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ ) VDGR 600 Vdc Gate–Source Voltage — Continuous Gate–Source Voltage — Non–Repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) ID ID IDM 8.0 6.4 Adc Apk Total Power Dissipation Derate above 25°C PD 180 1.43 Watts W/°C Operating and Storage Temperature Range TJ, Tstg –55 to 150 °C Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL = 24 Apk, L = 3.0 mH, RG = 25 Ω ) EAS 864 mJ Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient R θJC R θJA 0.70 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Preferred devices are Motorola recommended choices for future use and best overall value. REV 4 Order this document by MTW8N60E/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA /C0077/C0084/C0087/C0056/C0078/C0054/C0048/C0069 TMOS POWER FET

8.0 AMPERES

600 VOLTS

R DS(on) = 0.55 OHM Motorola Preferred Device D S G CASE 340K–01, Style 1 TO–247AE  Motorola, Inc. 1996

/C0077/C0084/C0087/C0056/C0078/C0054/C0048/C0069

2 Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) V(BR)DSS 600 695 Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 600 Vdc, VGS = 0 Vdc) (VDS = 600 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS 100 µAdc Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS — — 100 nAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS , ID = 250 µAdc) Temperature Coefficient (Negative) VGS(th) 2.0 3.0 7.0 4.0 Vdc mV/°C Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 4.0 Adc) R DS(on) — 0.46 0.55 Ohm Drain–Source On–Voltage (VGS = 10 Vdc) (ID = 8.0 Adc) (ID = 4.0 Adc, TJ = 125°C) VDS(on) 3.2 4.8 4.6 Vdc Forward Transconductance (VDS = 15 Vdc, ID = 4.0 Adc) gFS 4.0 8.5 — mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 Vdc V 0 Vdc C iss — 2480 3470 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) C oss — 247 346 Reverse Transfer Capacitance f = 1.0 MHz) C rss — 56 120 SWITCHING CHARACTERISTICS (2) Turn–On Delay Time (V 300 Vd I 8 0 Ad td(on) — 23.6 50 ns Rise Time (VDD = 300 Vdc, ID = 8.0 Adc, VGS =1 0V d c tr — 37.6 70 Turn–Off Delay Time VGS = 10 Vdc, R G = 9.1 Ω ) td(off) — 80 170 Fall Time G ) tf — 48 95 Gate Charge (See Figure 8) (V 300 Vd I 8 0 Ad Q T — 67 100 nC (VDS = 300 Vdc, ID = 8.0 Adc, VGS = 10 Vdc) Q 1 — 17 — VGS = 10 Vdc) Q 2 — 26 — Q 3 — 27 — SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (1) (IS = 8.0 Adc, VGS = 0 Vdc) (IS = 8.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD 0.829 0.71 1.1 Vdc Reverse Recovery Time (See Figure 14) (I 8 0 Ad V 0 Vd trr — 381 — ns (See Figure 14) (IS = 8.0 Adc, VGS = 0 Vdc, ta — 225 —(S , GS , dIS/dt = 100 A/µs) tb — 156 — Reverse Recovery Stored Charge Q RR — 4.61 — µC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25″ from package to center of die) LD — 4.5 — nH Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) LS — 13 — nH (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature.