MTW8N50E MOTOROLA | Alldatasheet
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MOTOROLA SC (XSTRS/R F) b8E D MM 6367254 0098837 956 MEMOTL MOTOROLA Be SEMICONDUCTOR Sa TECHNICAL DATA Advance Information MTW8N50E TMOS E-FET™ . . Atroa Prterd Gere Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET 1s designed to withstand high energy TMOS POWER FET in the avalanche and commutation modes. The new energy efficient 8.0 AMPERES design also offers a drain-to-source diode with a fast recovery time. Rps(on) = 0.80 OHM Designed for high voltage, high speed switching applications in 500 VOLTS power supplies, converters and PWM motor controls, these devices ® are particularly well suited for bridge circuits where diode speed and TMOS commutating safe operating areas are critical and offer additional oo safety margin against unexpected voltage transients. @ Avalanche Energy Specified D ® Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ® Diode is Charactenzed for Use in Bridge Circuits 6 © Ipss and Vpgion) Specified at Elevated Temperature s CASE 340F-03 ‘TO-247AE MAXIMUM RATINGS (T, = 25°C uniess otherwise noted) PO ating symipor value | unit | [BeanSourcevotge Mss 00 vee | Drain-Gate Voltage (Rag = 1.0 MO) | voor | 500 | vee Drain Current — Continuous @ Tg = 25°C. 8.0 Ade — Continuous @ Tg = 100°C 50 — Single Pulse tp <10 us) 32 Apk Total Power Dissipation @ Tg = 25°C Watts Derate above 25°C wee ‘Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy — Starting Ty = 25°C Eas 430 md (Vpp = 50 Vde, Vgg = 10 Vpk, IL = 8 0 Apk, L = 10 4 mH, Rg = 252) Thermal Resistance — Junction to Case Reic “cw — Junction to Ambient Pasa a MOTOROLA TMOS POWER MOSFET DATA 3-443,
MOTOROLA SC (XSTRS/R F) b8E D MM b3b? MTW8NS50E ELECTRICAL CHARACTERISTICS (Tc = 25°C unless othermse noted) [Characteristic Symtot Twin [tye [Mex [unit] OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVpss (Was = 0 V, Ip = 250 wade) Ve Temperature Coefficient (Positive) mvc Zaro Gate Voltage Drain Current loss wAde (Vps = 500 Ve, Vag = 0) 250 (Vpg = 500 Vdc, Vgg = 0, Ty = 125°C) 1000 Gate-Body Leakage Curent (Vas = #20 Vee, Vos = 0) [tess [ = [ = [100 [ maac_| ON CHARACTERISTICS" Gate Threshold Voltage V@sith) (ps = Ves. Ip = 250 wAdc) Vde ‘Temperature Coetticient (Negative) mvrc Static Drain-Source On-Resistance (Vqg = 10 Vado, Ip = 4.0 Adc) Rpsion) | — |_| 08 | ohm | Drain-Source On-Voltage (Vag = 10 Vde) Vos(on) Vpk (ip = 8.0 Adc) 76 (ip = 4.0 Adc, Ty = 125°C) 64 Forward Transconductance (Vs = 50 Vas, Ip = 4.0 Ade) [ors [40 | = [= mhos | DYNAMIC CHARACTERISTICS Input Capacitance Tiss = #200 T1600 [oF Fave Tf CCT eo ‘SWITCHING CHARACTERISTICS*+ a Taos tote i [= Ts | Lee =e a (ps = 400 Vee, Ip = 8.0 Ace, Te ee [ao [= |» [= | SOURCE-DRAIN DIODE CHARACTERISTICS" Forward On-Voltage {lg=80 Ado, Vag =0) Vsp uM Vae (ig = 8.0 Adc, Vag = 0, Ty = 125°C) to [Pass =e ae] INTERNAL PACKAGE INDUCTANCE Internal Orain inductance lp nH (Measured from the contact screw on tab to center of die) (Measured from the drain lead 0 25” trom package to center of die) Internal Source Inductance ts nH (Measured from the source lead 0.25” from package to source bond pad) “Paine Test Pulse With 200 us, Duty Ovo s 2% + Swichingcharactenstcs are dependent of oparaing gncton lempertire MOTOROLA TMOS POWER MOSFET DATA 3-444