MTW6N60E MOTOROLA | Alldatasheet
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MOTOROLA SC (XSTRS/R F) b8E D MM 6367254 0098835 083 MEMOTL MOTOROLA , m@ SEMICONDUCTOR SEE TECHNICAL DATA Advance Information MTWG6N6OE TMOS E-FET™ . . Motrla Prefered Deve Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high energy TMOS POWER FET in the avalanche and commutation modes. The new energy efficient 6.0 AMPERES design also offers a drain-to-source diode with a fast recovery time. Rps(on) = 1.20 OHM Designed for high voltage, high speed switching applications in 600 VOLTS power supplies, converters and PWM motor controls, these devices ® are particularly well suited for bridge circuits where diode speed and TOS commutating safe operating areas are critical and offer additional ‘safety margin against unexpected voltage transients. ®@ Avalanche Energy Specified o © Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ® Diode is Characterized for Use in Bridge Circuits 6 © Ipss and Vpg(on) Specified at Elevated Temeprature CASE 340F-03 TO-247AE MAXIMUM RATINGS (T) = 25°C unless otherwise noted) | Brainsourcevotage ss faves Drain-Gate Voltage (Rag = 1 0MQ) | Yocn [800 | vac Gate-Source Voltage — Continuous Drain Current — Continuous @ Tg = 25°C Ade — Continuous @ T¢ = 100°C — Single Pulse (tp < 10 ys) Apk Total Power Dissipation @ Tc = 25°C Watts Derate above 25°C wre Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy — Starting Ty = 25°C 187 mJ (Vpp = 50 Vde, Veg = 10 Vpk, I_ = 6 0 Apk, L = 104 mH, Rg = 250) Thermal Resistance — Junction to Case Reuc 1.0 “CW — Junction to Ambient Roa 40 [Maxmum Lead Temperature for Soldering Purposes, 1/8" tromeaseforseeconds [ts aso Te | Prete deter a Moro econmaned hnoen rhe uae over ae a MOTOROLA TMOS POWER MOSFET DATA 3-441
MOTOROLA SC (XSTRS/R F) BSE D MM 6367254 0098836 TLT MMNOTE MTWEN60E ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) [_ Charncteristic TT Symbor_ [min [tye [mex [unit _| OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVpss (Wes = 0V. Ip = 250 Adc) 600 Vde Temperature Coefficient (Positive) - mvPc Zero Gate Voltage Drain Current Ade (Vpg = 600 Vdc, Vg = 0) 250 (Vs = 600 Vdc, Vag = 0, Ty = 125°C) 1000 Gate-Body Leakage Current (Vas = #20 Ve, Vos = 0) [ icss [ = [ = [10 | nase ON CHARACTERISTICS* Gate Threshold Voltage Vasith) (Vps = Vas. Ip = 250 wAdc) 2.0 Vde Temperature Coefficient (Negative) - mvrc Static Drain-Source On-Resistance (Vag = 10 Vdc, Ip = 5.0 Adc) [ Rosin) | — | | 12 | Onm | Drain-Source On-Vottage (Vag = 10 Vdc) Vpsion) Vek (ip = 6.0 Ade) 80 (Ip = 3.0 Ade, Ty = 125°C) 72 [Forward Tarsconducance (pg = 18 Vas ip = 304g) | es [25 | — | — | whee | DYNAMIC CHARACTERISTICS Vog=25,vée,vog-0, Foe | — [vs T= | IDS = 25, Vdc, Vg = 0, t= 1.0 Miz) | Coes | — [ ws [| — | ee ee SWITCHING CHARACTERISTICS*t ee ee GS = pow [- [ # | 6 | (ps=420Vde,p=eorc, {| a | — | eo [ — | ves-ve) [Te = Pe fH | ‘SOURCE-DRAIN DIODE CHARACTERISTICS* Forward On-Voltage (lg = 6.0 Ado, Vag = 0) Vso 13 Voc (lg = 6.0 Ade, Vag =0, Ty = 125°C) 12 Rovere Recovery Tne ee oe (lg= 6.0 Ade, Vas =0, {ot [| ~ [ 2 | — | sge=tootne) y= oe P| [aaa [es INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance Lp nH (Measured fram the drain lead 0.25” from package to center of die) Internal Source Inductance Ls (Measured fram the source lead 0.25” from package to source bond pad) *Putse Test. Pulse Whdth < 300 j18, Duty Cycle < 2% + Switching characters are independent of eperaing uncon temperature a MOTOROLA TMOS POWER MOSFET DATA 3-442