MTW6N100E ONSEMI | Alldatasheet

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© Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 5

1 Publication Order Number:

6 Amps, 1000 Volts

N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage −blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

  • Robust High Voltage Termination
  • Avalanche Energy Specified
  • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
  • Diode is Characterized for Use in Bridge Circuits
  • IDSS and VDS(on) Specified at Elevated Temperature
  • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage VDSS 1000 Vdc Drain−Gate Voltage (RGS = 1.0 MΩ) VDGR 1000 Vdc Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 μs) ID ID IDM 6.0 4.2 Adc Apk Total Power Dissipation Derate above 25°C PD 180 1.43 Watts W/°C Operating and Storage Temperature Range TJ, Tstg −55 to 150 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, IL = 6.0 Apk, L = 27.77 mH, RG = 25 Ω) EAS 720 mJ Thermal Resistance − Junction to Case Thermal Resistance − Junction to Ambient RθJC RθJA 0.70 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C Device Package Shipping

ORDERING INFORMATION

MTW6N100E TO −247 30 Units/Rail Preferred devices are recommended choices for future use and best overall value. LL = Location Code Y = Year WW = Work Week MTW6N100E LLYWW http://onsemi.com MARKING DIAGRAM & PIN ASSIGNMENT D G TO−247AE CASE 340K Style 1 N−Channel S

6 AMPERES

1000 VOLTS

RDS(on) = 1.5 Ω 2 3 Gate Source Drain Drain

http://onsemi.com ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 μAdc) Temperature Coefficient (Positive) V(BR)DSS 1000 1,270 Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 1000 Vdc, VGS = 0 Vdc) (VDS = 1000 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS 100 μAdc Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS − − 100 nAdc ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (VDS = VGS, ID = 250 μAdc) Temperature Coefficient (Negative) VGS(th) 2.0 3.0 7.0 4.0 Vdc mV/°C Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 3.0 Adc) RDS(on) − 1.28 1.5 Ohm Drain−Source On−Voltage (VGS = 10 Vdc) (ID = 6.0 Adc) (ID = 3.0 Adc, TJ = 125°C) VDS(on) 8.0 14.4 12.6 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3.0 Adc) gFS 4.0 7.2 − mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss − 3000 4210 pF Output Capacitance Coss − 219 440 Reverse Transfer Capacitance Crss − 43 90 SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time (VDD = 500 Vdc, ID = 6.0 Adc, VGS = 10 Vdc, RG = 9.1 Ω) td(on) − 27 45 ns Rise Time tr − 29 65 Turn−Off Delay Time td(off) − 93 170 Fall Time tf − 43 95 Gate Charge (See Figure 8) (VDS = 800 Vdc, ID = 6.0 Adc, VGS = 10 Vdc) QT − 66 100 nC Q1 − 12.5 − Q2 − 25.9 − Q3 − 26 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (Note 1) (IS = 6.0 Adc, VGS = 0 Vdc) (IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD 0.808 0.64 1.0 Vdc Reverse Recovery Time (See Figure 14) (IS = 6.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/μs) trr − 735 − ns ta − 188 − tb − 547 − Reverse Recovery Stored Charge QRR − 4.7 − μC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25″ from package to center of die) LD − 4.5 − nH Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) LS − 13 − nH 1. Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature.

http://onsemi.com PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN R P A K V F D G U L E0.25 (0.010) M TB M 0.25 (0.010) M YQ S J H C 123 −T− −B− −Y− −Q− DIM MIN MAX MIN MAX INCHESMILLIMETERS A 19.7 20.3 0.776 0.799 B 15.3 15.9 0.602 0.626 C 4.7 5.3 0.185 0.209 D 1.0 1.4 0.039 0.055 E 1.27 REF 0.050 REF F 2.0 2.4 0.079 0.094 G 5.5 BSC 0.216 BSC H 2.2 2.6 0.087 0.102 J 0.4 0.8 0.016 0.031 K 14.2 14.8 0.559 0.583 L 5.5 NOM 0.217 NOM P 3.7 4.3 0.146 0.169 Q 3.55 3.65 0.140 0.144 R 5.0 NOM 0.197 NOM U 5.5 BSC 0.217 BSC V 3.0 3.4 0.118 0.134 TO−247 CASE 340K−01 ISSUE C ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 MTW6N100E/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative