MTW54N05E MOTOROLA | Alldatasheet
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MOTOROLA SC (XSTRS/R F) b8E D MM 6367254 00986b) 175 MENOTL MOTOROLA @ SEMICONDUCTOR so TECHNICAL DATA Advance Information TMOS E-FET™ MTWS54NOSE Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high energy TMOS POWER FET 1n the avalanche and commutation modes The new energy efficient 54 AMPERES design also offers a drain-to-source diode with a fast recovery time. Rps(on) = 0.014 OHM Designed for low voltage, high speed switching applications in power 50 Volts supplies, converters and PWM motor controls, these devices are i ® particularly well suited for bridge circuits where diode speed and | TMos commutating safe operating areas are critical and offer additional rs safety margin against unexpected voltage transients © Avalanche Energy Specified D © Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode / © Diode 1s Characterized for Use in Bridge Circuits ¢ { ) ® IDSs and Vps(on) Specified at Elevated Temperature Ss CASE 340F-03 TO-247AE MAXIMUM RATINGS (T, = 25°C unless otherwise noted) Drain Gate Votlage (Ras =10 MO) re | Drain Current — Continuous @ Tg = 25°C 54 Adc — Continuous @ Tc = 100°C 37 — Single Pulse (tp < 10 u's) 220 Apk Total Power Dissipation @ Tc = 25°C 210 Watts: Derate above 25°C 1.43 wre Single Pulse Drain-to-Source Avalanche Energy — Starting Ty = 25°C Eas 640 md (Von = 50 Vdc, Vag = 10 Vpk, IL = 54 Apk, L = 0.44 mH, Rg = 25 Q) Thermal Resistance — Junction to Case Resc 07 °clW — Junetion to Ambient Roya 80 MOTOROLA TMOS POWER MOSFET DATA 3-467
MOTOROLA SC CXSTRS/P F) BBE D MM 6367254 0098462 001 MEMOTE MTWS54NO5E ELECTRICAL CHARACTERISTICS (Tc = 25°C unless othermise noted) [haracteristic Symon [tye [max [unit] OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVpss (Ves = 0V, Ip = 250 Adc) Vde Temperature Coefficient (Positive) mvPc Zero Gate Voltage Drain Current nAde (Vps = 50 Vde, Veg = 0) (Vps = 40 Vde, Vg = 0, Ty = 125°C) Gate-Body Leakage Current (Vas = #20 Vado, Vps = 0) [tess [=] = [100 aac] ON CHARACTERISTICS" Gate Threshold Voltage Vesith) (Vps = Vas. |p = 250 Ade) 20 Vode Temperature Coefficient (Negative) (Ty = 125°C) 15 mvPC ‘Static Drain-Source On-Resistance (Vg = 10 Vdo, Ip = 27 Adc) Rosion) | — | — | 0014 [ onm | Drain-Source On-Voltage (Vqg = 10 Vo) Vps(on) Vode {Ip = 54 Adc) 4.0 (lp = 27 Ade, Ty = 126°C) 0.8 Forward Transconductance (Vpg = 10 Vdc, Ip = 27 Adc) [os [1 | — [ = | mos | DYNAMIC CHARACTERISTICS [ta | — [am [oo | (Vpg = 25 Vdc, Vag = 0, [Coss | Output Capacitance f= 1.0 Mis Goss | — | 200 | 2200 _| es co SWITCHING CHARACTERISTICS*+ ee Vgs = 10 Vdc, Ms [was] Gate Chae [ag 00 (Vs = 40 Vde, Ip = 54 Ade, nee [os [= p= | —_| SOURCE-DRAIN DIODE CHARACTERISTICS" Forward On-Voltage (ig = 54 Ade, Vad = 0) Vsp Vdc (Ig = 6.0 Ade, Vag = 0, Ty = 125°C) Reverse Recovery Time (lg = 54 Ado, Vas = 0, ns dig/at = 100 Aus) INTERNAL PACKAGE INDUCTANCE Internal Drain inductance lp (Measured from the drain lead 0 25” from package to center of die) Internal Source Inductance ls (Measured from the source lead 0.25” from package to source bond pad) “Polos Test Pulse Wath = 000 is, uly Cyto = 2% ++Switchng charactonstes are ndependent of operating wncton lamperature MOTOROLA TMOS POWER MOSFET DATA 3-468