MTW4N80 MOTOROLA | Alldatasheet
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MOTOROLA SC (¥STRS/R F) bak D MM 6367254 0096833 200 MENOTE MOTOROLA m= SEMICONDUCTOR TECHNICAL DATA Advance Information MTW4NSOE TMOS E-FET™ . ectoroia Prefered Devoe Power Field Effect Transisitor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high energy TMOS POWER FET in the avalanche and commutation modes. The new energy efficient | 4.0 AMPERES design also offers a drain-to-source diode with a fast recovery time. RDS(on) = 3.00 OHM Designed for high voltage, high speed switching applications in | VOLTS power supplies, converters and PWM motor controls, these devices ® are particularly well suited for bridge circuits where diode speed and TMOS commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. © Avalanche Energy Specified D © Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode © Diode 1s Characterized for Use in Bridge Circuits 6 © Ips and Vpsion) Specified at Elevated Temperature (CASE 340F-03 TO-247AE MAXIMUM RATINGS (T, = 25°C unless otherwise noted) [Rng Symp vatve ut a [crane vtage gg =taway Sig [ate Sauce vole Connie SSS Mes | ee Drain Current — Continuous @ Tg = 25°C Ade — Continuous @ Tg = 100°C — Single Pulse (tp $ 10 18) Apk ‘Total Power Dissipation @ To = 25°C Watts Derate above 25°C wre [Open an Sone Tompeaue Rage SSC we | Single Pulse Drain-to-Source Avalanche Energy — Starting Ty = 25°C (Vpp = 50 Vac, Vag = 10 Vpk, IL = 10 Apk, L = 10.4 mH, Rg = 252) Thermal Resistance — Junction to Case Rec cw — Junction to Ambient Resa [Rasim asd Torpeae lr SodewgPupae, Terion caatrswenm | | aw | | ‘is cociment contains tomato ona new product. Specticaon and formation are subject 10 change wit rebea E-FET a vademar of Moora ne TOS regstered trademark of Motrla ne Praerred dovces are Molo recommended hace or hi uso and best overall value MOTOROLA TMOS POWER MOSFET DATA 3-439
MOTOROLA SC (XSTRS/R F) B6E D MM 6367254 0098834 147 MEMOTE MTW4N80E ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) [____characterte TT symbot [in aye [wax [unit | OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVpss Vac (V@g = 0 V, Ip = 250 Ado) Temperature Coetticient (Positive) Zero Gate Voltage Drain Current loss nade (ps = 600 Vde, Veg = 0) 250 (Vps = 600 Vde, Vag = 0, Ty = 125°C) 1000 Gate-Body Leakage Current (Vg = #20 Vac. Vos = 0) [tess [= [=] 100 nace] ON CHARACTERISTICS* Gate Threshold Voltage Vesith) (Vos = Vas. !p = 250 pAde) 20 - Vac Temperature Coefficient (Negative) - 50 mvPc Static Drain-Source On-Resistance (Vgg = 10 Vdc, Ip = 2 0 Ade) Rosion) [=] [30 | onm | Drain-Source On-Voltage (Vg = 10 Vde) Vps(on) Vpk (Ip = 40 Ade) 14 (Ip = 2.0 Ade, Ty = 125°C) 12 Forward Teraconduare bg «15 Wie ip= 30 A) [as [5 [Pre | DYNAMIC CHARACTERISTICS a re SWITCHING CHARACTERISTICS’ t A Vas = 10 Vde, Wps=640VdeIp= 40rd, | ar | = | eo [= | [a [= | T= | SOURCE-DRAIN DIODE CHARACTERISTICS" Forward On-Voltage (Ig =40 Ade, Vag =0) Vsp 1s ts Voc (lg = 4.0 Ade, Vag = 0, Ty = 125°C) 12 ® (lg= 40 Ade, Vas = 0, rs ee Reverse Recovery Stored Charge se INTERNAL PACKAGE INDUCTANCE internal Drain Inductance Up nH (Measured from the drain lead 0.25” from package to center of die) Internal Source Inductance ls nH (Measured from the source lead 0 25” from package to source bond pad) “Pulse Test Pulse Width 2800 ps, Duty Gyoie = 2% { Swiching charactensucs are independent of operating yncton temperature MOTOROLA TMOS POWER MOSFET DATA 3-440