MTW10N40E MOTOROLA | Alldatasheet
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MOTOROLA SC (XSTRS/R F) b8E D MM 6367254 0098839 729 MENOTL MOTOROLA m@ SEMICONDUCTOR seu TECHNICAL DATA Advance Information TMOS E-FET ™ MTWION40E tetra Proce Once Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high energy = TMOS POWER FET in the avalanche and commutation modes. The new energy efficent 10 AMPERES design also offers a drain-to-source diode with a fast recovery time. Ros(on) = 0.55 OHM Designed for high voltage, high speed switching applications in 400 VOLTS power supplies, converters and PWM motor controls, these devices '@ are particularly well suited for bridge circuits where diode speed and ™os commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Avalanche Energy Specified D ® Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ®@ Diode is Characterized for Use in Bndge Circuits 6 * Ipss and Vps(on) Specified at Elevated Temperature CASE 340F-03 TO-247AE MAXIMUM RATINGS (T, = 25°C unless otherwise noted) [ DranSouce Vote ss | tT Drain-Gate Vottage (Rag = 1 0 Ma) [voor [400 vee | Gate-Source Voltage — Continuous Drain Current — Continuous @ Tg = 25°C 10 Adc — Continuous @ Tc = 100°C 70 — Single Pulse (tp < 10 ps) 40 Apk Total Power Dissipation @ Tg = 25°C Watts: Derate above 25°C wre Operating and Storage Temperature Range [_Tutag | S510 | oc | Single Pulse Dram-to-Source Avalanche Energy — Starting Ty = 25°C. Eas mu (Vpp = 50 Vde, Vgg = 10 Vpk, IL = 10 Apk, L= 104 mH, Rg = 2522) Thermal Resistance — Junction to Case Resc 10 °c — Junction to Ambient Rea 40 [Maximum Lead Temperature forSolderng Purposes, 16" from caseforS seconds | tT a0 | so ‘Ta cect comane haben 6 new red Speckcnons nd amaon a ste tanger coe Pree ceves ae eta ecrmanie ne tt aes va wn a MOTOROLA TMOS POWER MOSFET DATA 3-445
MOTOROLA SC (XSTRS/R F) BBE D MM 6367254 0098840 440 MENOTE MTW10N40E ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) OFF CHARACTERISTICS Drain-Source Breakdown Voltage Voss (V@g = 0 V, Ip = 250 Ade) Vdc ‘Temperature Coefticient (Positive) mvrc Zero Gate Voltage Drain Current Ipss Adc (Vpg = 400 Vde, Veg = 0) 250 (Vpg = 400 Vdc, Vag = 0, Ty = 125°C) 1000 Gate-Body Leakage Current (Vag = #20 Vao, Vs = 0) [tess [= [= [100 nace | ON CHARACTERISTICS* Gate Threshold Voltage Vesith) (Vos = V@s; Ip = 250 pAde) 20 - 40 Vde Temperature Coatficient (Negative) = 50 — | mvec ‘Static Drain-Source On-Resistance (Vgg = 10 Vdo, Ip = 5 0 Ade) [ Rossy | — | — | 055 | onm | Drain-Source On-Voltage (V@qg = 10 Vdc) Vpsion) Vek (Ip = 10 Adc) (Ip = 5.0 Ade, Ty = 125°C) Forward Transconductance (Vps = 50 Ve, Ip = 50 Ade) [es [40 [= T= | tos DYNAMIC CHARACTERISTICS a Fieverse Transfer Capactance [css [ = | 5 [ | SWITCHING CHARACTERISTICS"t [wen [= = [=] Vase 10 ae, a [+ [- [Ps [es] ‘SOURCE-DRAIN DIODE CHARACTERISTICS* Forward On-Voltage (Ig = 10 Adc, Vag = 0) Vsp 1 20 Vde (lg = 10 Adc, Vag = 0, Ty = 125°C) 12 . Reverse Recovery Time a ee ee (is=10.de, Veg =0. | f= | a [ - | Reverse Recovery Stored Charge [one [= [#3 [= Tse | INTERNAL PACKAGE INDUCTANCE Internal Drain inductance Lp (Measured from the contact screw on tab to center of die) (Measured from the drain lead 0.25” from package to center of die) Internal Source Inductance ls 13 (Measured from the source lead 0.25” from package to source bond pad) “Pula Test Pulse With £200 us, Duy Gye = 2% ++ Swiching charactonstcs are mdependert of operating juncon temperature. MOTOROLA TMOS POWER MOSFET DATA 3-446