MTSR3060P_V01 LUGUANG | Alldatasheet

Document overview

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  • PDF pages: 4

Technical content

Features

  • Adopt FRED chip
  • Low forward Voltage drop
  • Fast reverse recovery time
  • High frequency operation
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
  • Guard ring for enhanced ruggedness and long term reliability Typical Applications
  • Typical applications are in switching power supplies, . converters, freewheeling diodes, and reverse battery protection. Mechanical Data
  • Package: TO-247-2L Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant
  • Terminals: Tin plated leads, solderable per J-STD- 002 and JESD22-B102
  • Polarity: As marked ■Maximum Ratings (Tj=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT MTSR3060P Device marking code MTSR3060P Repetitive Peak Reverse Voltage VRRM V 600 Average Rectified Output Current @60Hz sine wave, R-load, Tc(FIG.1) IO A 30 Surge(Non-repetitive)Forward Current @60Hz half sine-wave, 1 cycle, Ta=25℃ IFSM A 300 Current Squared Time @1ms≤t≤8.3ms Tj=25℃， I 2t A2s 373 Single Pulse Avalanche Energy @ Tp=40uS, Tj=25℃,L=15mH EAS mJ 210 Storage Temperature Tstg ℃ -55 ~ +175 Junction Temperature Tj ℃ -55 ~ +175 Junction capacitance @4V,1MHz Cj pF 195 http://www.lgesemi.com Revision:20240607-P 1 mail:lge@lgesemi.com

■Electrical Characteristics PARAMETER SYMBOL UNIT TEST CONDITIONS Min Typ Max Instantaneous forward voltage drop per diode VFM V DC reverse current at rated DC blocking voltage per diode IRRM1 uA VRM=VRRM Tj=25℃ - - 5.0 IRRM2 VRM=VRRM Tj=125℃ - - 200 Reverse Recovery Time Trr ns IF=0.5A IRM=1A IRR=0.25A Tj=25℃ - 18 22 IF=30A di/dt=-200A/us VRM=400V Peak recovery current IRRM A Tj=25℃ - 6.5 - Tj=125℃ - 16.5 - Reverse recovery charge Qrr nC Tj=25℃ - 590 - Tj=125℃ - 2705 - ■Thermal Characteristics （Tj=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT MTSR3060P Thermal Resistance Between junction and case RθJ-C ℃/W 1.0 Between junction and Air RθJ-A ℃/W 50 ■ Characteristics(Typical) 12 5 1 0 2 0 5 0 1 0 0 100 150 200 250 8.3ms Single Half Sine-Wave JEDEC Method 300 FIG2:Surge Forward Current Capability Number of Cycles Peak Forward Surge Current (A) 50 100 200170 30.0 12.0 9.0 6.0 3.0 Case Temperature（℃） Average Forward Output Current (A) FIG1:Io -Tc Curve 15.0 18.0 21.0 24.0 27.0 http://www.lgesemi.com Revision:20240607-P2 mail:lge@lgesemi.com MTSR3060P Super-Fast Recovery Diodes 30A FRED Pt

0.2 0.4 0.80.1 0.2 0.5 1.0 5.0 1.2 2.01.60 1.8 Instantaneous Forward Current (A) FIG3: Forward Voltage Instantaneous Forward Voltage (V) 2.2 2.4 2.6 2.0 Tj=25℃ Tj=125℃ FIG.4: Instantaneous Reverse Characteristics Percent of Rated Peak Reverse Voltage (%) Instantaneous Reverse Current (uA) 02 04 06 08 0 1 0 0 0.01 0.1 1.0 100 Tj=125 ℃ Tj=25 ℃ trr FIG.5: Diagram of circuit and Testing wave form of reverse reco very time -0.25A -1.0A +0.5A 1cm SET TIME BASE FOR 5/10ns/cm (-) (+) (-) (+) 50Ω NONINDUCTIVE 10Ω NONINDUCTIVE PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE1) DUT NONINDUCTIVE NOTES: 1.Rise Time=7ns max .Inpot Impedance=1M Ω 22pf 2.Rise Time=10ns max.Sourse Impedance=50 Ω http://www.lgesemi.com Revision:20240607-P3 mail:lge@lgesemi.com MTSR3060P Super-Fast Recovery Diodes 30A FRED Pt

■ Outline Dimensions TO247-2L Dim Min Max A 4.80 5.20 A1 2.21 2.61 A2 1.85 2.15 b 1.11 1.36 b2 1.91 2.21 c 0.51 0.75 D 20.70 21.30 D1 16.25 16.85 E 15.50 16.10 E1 13.00 13.60 E2 4.80 5.20 E3 2.30 2.70 e 10.88 TYP L 19.62 20.22 L1 - 4.30 φP 3.40 3.80 φP1 - 7.30 S 6.15 TYP TO-247 30pcs /Tube 570×155×50 450 580×340×125 1800 Packge Carton S ize L×W×H(mm) Quatity(pcs/carton) Packing Box Size L×W×H(m Quat ity(pcs/box) http://www.lgesemi.com Revision:20240607-P4 mail:lge@lgesemi.com MTSR3060P Super-Fast Recovery Diodes 30A FRED Pt