MTSR2020PT LUGUANG | Alldatasheet
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Technical content
Ultrafast Soft Recovery Diode, 200V, 10A×2 Description: These diodes are optimized to less losses and EMI/RFI in high frequency power conditioning system. The soft recovery character of the diodes offers buffer in most applications. These devices are suited for power converters and other applications where the switching losses are not significant portion of the total losses. Features: ⚫ Ultrafast Recovery ⚫ 175°C operating junction temperature ⚫ Designed and qualified for industrial level Applications: ⚫ Inverter welding ⚫ Switched mode power supply ⚫ UPS Absolute Maximum Ratings Parameter Symbol Test Conditions Values Units Repetitive peak reverse voltage VRRM 200 V Continuous forward current IF(AV) TA=110℃ 20 A Single pulse forward current IFSM TA=25℃ 210 A Maximum repetitive forward current IFRM Square wave, 20kHZ 40 A Operating junction Tj 175 ℃ Storage temperatures Tstg -55 to +175 ℃ Electrical characteristics (Ta=25℃unless otherwise specified) Parameter Symbol Test Conditions Min. Typ. Max. Units Breakdown voltage Blocking voltage VBR VR IR=100µA 200 V Forward voltage VF IF=10 A 0.92 1.10 V IF=10 A, Tj =125℃ 0.82 1.00 V Reverse leakage current IR VR= VRRM 20 µA Tj=150℃, VR=200V 200 µA Reverse recovery time trr IF=0.5A, IR=1A, IRR=0.25A 30 ns IF=1A,VR=30V, di/dt =200A/us 18 25 ns Thermal characteristics Parameter Symbol Typ MAX Units Junction-to-Case RthJC - 0.70 ℃/W Product Summary VR 200 V IF(AV) 2×10 A trr 25 ns http://www.lgesemi.com Revision:20240722-P1 mail:lge@lgesemi.com
Package Information
Symbol Dimensions(millimeters) Min. Max. A 4.80 5.20 A1 2.21 2.61 A2 1.85 2.15 b 1.10 1.30 b1 2.55 2.85 b2 1.90 2.15 c 0.50 0.75 D 20.70 21.30 D1 16.25 16.85 e 5.25 5.65 E 15.60 16.00 E1 13.06 13.46 E2 4.80 5.20 E3 1.80 2.50 L 19.62 20.22 L1 4.00 4.30 ФP 3.40 3.80 ФP1 7.00 7.30 S 5.95 6.35 http://www.lgesemi.com Revision:20240722-P2 mail:lge@lgesemi.com MTSR2020PT Ultrafast Soft Recovery Diode, 200V, 10A×2