MTSR1020CT LUGUANG | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 4

Technical content

Features

  • Adopt FRD chip
  • Low forward Voltage drop
  • Fast reverse recovery time
  • High frequency operation
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
  • Guard ring for enhanced ruggedness and long term reliability Typical Applications Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. Mechanical Data
  • Package: TO-220AB ITO-220AB Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant
  • Terminals: Tin plated leads, solderable per J-STD- 002 and JESD22-B102
  • Polarity: As marked ■ Maximum Ratings (Ta=25℃ Unless otherwise specified ） MTSR1020CT MTSR1020FCT VRSM V 200 200 VRRM V 200 200 http://www.lgesem i.com mail:lge@lgesemi.comRevision:20170701-P1 TYPE

■Electrical Characteristics PARAMETER SYMBOL UNIT TEST CONDITIONS Min Typ Max Instantaneous forward voltage drop per diode VFM V DC reverse current at rated DC blocking voltage per diode IRRM1 uA VRM=VRRM Tj=25℃ - - 5 IRRM2 VRM=VRRM Tj=150℃ - 25 50 Reverse Recovery Time Trr ns IF=0.5A IRM=1A IRR=0.25A Tj=25℃ - 20 25 Tj=25℃ IF=5A di/dt=-200A/us VRM=100V 17.4 Tj=125℃ 29.4 Peak recovery current IRRM A Tj=25℃ - 3.11 - Tj=125℃ - 5.43 - Reverse recovery charge Qrr nC Tj=25℃ - 29.64 - Tj=125℃ - 80 - ■Thermal Characteristics （Tj=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT Thermal Resistance Between junction and case RθJ-C ℃/W 4.0 Thermal Resistance Between junction and Air RθJ-A ℃/W 50 ■Ordering Information (Example) PREFERED P/N UNIT WEIGHT(g) MINIIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE Approximate 1.6 50 1000 5000 Tube ■Characteristics (Typical) 12 5 10 20 50 100 100 8.3ms Single Half Sine-Wave JEDEC Method 120 FIG2:Surge Forward Current Capability Number of Cycles Peak Forward Surge Current (A) Case Temperature（℃） Average Forward Output Current (A) FIG1:Io -Tc Curve 50 100 150 2.5 5.0 7.5 10.0 12.5 15.0 17.5 200 TC measure point MTSR1020CT/MTSR1020FCT Super-Fast Recovery Diodes 5A*2 FRED Pt http://www.lgesem i.com mail:lge@lgesemi.comRevision:20170701-P2 MTSR1020CT MTSR1020FCT

FIG.5: Diagram of circuit and Testing wave form of reverse reco very time -0.25A -1.0A +0.5A 1cm SET TIME BASE FOR 5/10ns/cm (-) (+) (-) (+) 50Ω NONINDUCTIVE 10Ω NONINDUCTIVE PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE1) DUT NONINDUCTIVE NOTES: 1.Rise Time=7ns max .Inpot Impedance=1M Ω 22pf 2.Rise Time=10ns max.Sourse Impedance=50 Ω 0.2 0.4 0.60.1 0.2 0.5 1.0 5.0 0.8 1.41.00 1.2 Instantaneous Forward Current (A) FIG3: Forward Voltage Instantaneous Forward Voltage (V) 1.6 1.8 2.0 2.0 Tj=25℃ Tj=100℃ Tj=125℃ Tj=150℃ FIG.4: Instantaneous Reverse Characteristics Percent of Rated Peak Reverse Voltage (%) Instantaneous Reverse Current (uA) 0 20 40 60 80 100 0.01 0.1 1.0 100 Tj=125 ℃ Tj=25 ℃ Tj=100 ℃ Tj=150 ℃ MTSR1020CT/MTSR1020FCT Super-Fast Recovery Diodes 5A*2 FRED Pt http://www.lgesem i.com mail:lge@lgesemi.comRevision:20170701-P3

■Outline Dimensions A C K J F L B D E G H I TO-220AB Dim ensions in m illim eters TO-220AB Dim Min Max A 9.5 10.9 B 2.22 3.27 C 3.34 4.31 D 14.5 15.5 E 3.16 4.46 F 0.28 0.64 G 0.68 0.94 H 13.06 14.62 I 2.01 3.07 J 4.04 5.1 K 1.14 1.4 L 2.14 3.19 ITO-220AB Dim Min Max A 9.8 10.2 B 2.25 2.75 C 2.95 3.45 D 14.75 15.25 E 3.05 3.95 F 0.45 0.75 G 0.45 0.75 H 13.4 14.2 I 2.35 2.75 J 4.3 4.8 K 2.58 2.82 L 2.58 2.82 M 1.47 1.77 A C J F L B D E G H I K M ITO-220AB Dimensions in millimeters MTSR1020CT/MTSR1020FCT Super-Fast Recovery Diodes 5A*2 FRED Pt http://www.lgesem i.com mail:lge@lgesemi.comRevision:20170701-P4