MTS3572G6 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 9

Technical content

Features

  • Simple drive requirement
  • Low gate charge
  • Low on-resistance
  • Fast switching speed
  • Pb-free package Equivalent Circuit Outline MTS3572G6 TSOP-6 G：Gate S：Source D：Drain G1 Pin 1

CYStech Electronics Corp. Spec. No. : C778G6 Issued Date : 2012.02.10 Revised Date : 2012.10.09 Page No. : 2/9 MTS3572G6 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Limits Parameter Symbol N-channel P-channel Unit Drain-Source Breakdown V oltage BVDSS 60 -20 V Gate-Source V oltage VGS ±20 ±12 V Continuous Drain Current @TA=25 °C (Note 1) ID 0.3 -4.3 A Continuous Drain Current @TA=70 °C (Note 1) ID 0.24 -3.4 A Pulsed Drain Current (Note 2) IDM 0.8 -20 A Pd 1.14 W Total Power Dissipation (Note 1) Linear Derating Factor 0.01 W / °C Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Thermal Resistance, Junction-to-Ambient (Note 1) Rth,ja 110 °C/W Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec; 180°C/W when mounted on minimum copper pad 2.Pulse width limited by maximum junction temperature N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 60 - - V VGS=0, ID=250μA VGS(th) 1.0 - 2.5 V VDS=VGS, ID=250μA IGSS - - ±10 VGS=±20V , VDS=0 - - 1 VDS=60V , VGS=0 IDSS - - 10 μA VDS=48V , VGS=0, Tj=70°C - 1.5 2.5 ID=300mA, VGS=10V - 1.9 3 ID=100mA, VGS=4.5V *RDS(ON) - 3.3 6 Ω ID=10mA, VGS=2.5V *GFS 100 240 - mS VDS=10V , ID=100mA Dynamic Ciss - 30.6 - Coss - 5.5 - Crss - 4 - pF VDS=10V , VGS=0, f=1MHz *td(ON) - 2.6 - *tr - 7.1 - *td(OFF) - 8.6 - *tf - 15 - ns VDS=30V , ID=100mA, VGS=5V , RG=25Ω *Qg - 0.7 - *Qgs - 0.3 - *Qgd - 0.1 - nC VDS=30V , ID=0.3A, VGS=4.5V Source-Drain Diode *IS - - 0.3 *ISM - - 0.8 A *VSD - - 1.2 V VGS=0V , IS=100mA *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C778G6 Issued Date : 2012.02.10 Revised Date : 2012.10.09 Page No. : 3/9 MTS3572G6 CYStek Product Specification P-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -20 - - V VGS=0, ID=-250μA VGS(th) -0.4 - -1 V VDS=VGS, ID=-250μA IGSS - - ±20 VGS=±12V , VDS=0 - - -1 VDS=-20V , VGS=0 IDSS - - -25 μA VDS=-16V , VGS=0, Tj=70°C - - 52 ID=-4A, VGS=-4.5V - - 60 ID=-4A, VGS=-2.5V *RDS(ON) - - 75 mΩ ID=-2A, VGS=-1.8V *GFS - 4 - S VDS=-10V , ID=-1A Dynamic Ciss - 1220 - Coss - 103 - Crss - 92 - pF VDS=-10V , VGS=0, f=1MHz *td(ON) - 12.5 - *tr - 12 - *td(OFF) - 70 - *tf - 20 - ns VDS=-10V , ID=-1A, VGS=-4.5V , RG=6Ω, RD=10Ω *Qg - 10 - *Qgs - 1.9 - *Qgd - 2.7 - nC VDS=-10V , ID=-4.3A, VGS=-4.5V Source-Drain Diode *IS - - -1 *ISM - - -4 A *VSD - - -1.2 V VGS=0V , IS=-1A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

Device Package Shipping Marking MTS3572G6 TSOP-6 (Pb-free lead plating package) 3000 pcs / Tape & Reel 3572

CYStech Electronics Corp. Spec. No. : C778G6 Issued Date : 2012.02.10 Revised Date : 2012.10.09 Page No. : 4/9 MTS3572G6 CYStek Product Specification N-channel Characteristic Curves Typical Output Characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 02468 1 0 1 2 Drain-Source Voltage -VDS(V) Drain Current - ID(A) 3.5V VGS=2V 2.5V 4.5V 6V10V Drain Current vs Gate-Source Voltage 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0123456789 1 0 Gate-Source Voltage-VGS(V) Drain Current-ID(A) 125°C VDS=10V 25°C -55°C Static Drain-Source On-State resistance vs Drain Current 0.001 0.01 0.1 1 Drain Current-ID(A) Static Drain-Source On-State Resistance-RDS(on)(Ω) VGS=2.5V VGS=4.5V VGS=10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 0 0.2 0.4 0.6 0.8 1 Reverse Drain Current -IDR(A) Source-Drain Voltage-VSD(V) Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 02468 1 Drain-Source On-State Resistance vs Junction Tempearture -60 -20 20 60 100 140 180 Junction Temperature-Tj(°C) Static Drain-Source On-State Resistance-RDS(ON)(Ω) VGS=10V, ID=100mA Gate-Source Voltage-VGS(V) Static Drain-Source On-State Resistance-RDS(ON)(Ω) ID=100mA

CYStech Electronics Corp. Spec. No. : C778G6 Issued Date : 2012.02.10 Revised Date : 2012.10.09 Page No. : 5/9 MTS3572G6 CYStek Product Specification N-channel Characteristic Curves(Cont.) Capacitance vs Drain-to-Source Voltage 100 0.1 1 10 100 Drain-Source Voltage -VDS(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.8 1.2 1.4 1.6 -60 -20 20 60 100 140 Junction Temperature-Tj(°C) Threshold Voltage-VGS(th)(V) ID=250μA Maximum Safe Operating Area 0.01 0.1 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current (A) 10μs RDS(ON) Limit 100μs 1ms 10ms 100ms TA=25°C, Tj=150°C VGS=10V Single Pulse DC Gate Charge Characteristics 00 . 511 . 52 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) VDS=30V ID=0.3A Transient Thermal Res 0.01 0.1 t1, Square Wave r(t), Normalized EffectiveTransient Thermal Resistance ponse Curves Pulse Duration(s) D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=180 °C/W 0.2 0.1 0.05 Single Pulse 0.02 0.01

CYStech Electronics Corp. Spec. No. : C778G6 Issued Date : 2012.02.10 Revised Date : 2012.10.09 Page No. : 6/9 MTS3572G6 CYStek Product Specification P-channel Characteristic Curves Typical Output Characteristics 012345 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) -VGS=1.5V -VGS=1.8V 4.5V 3.5V 2.5 V Brekdown Voltage vs Ambient Temperature -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -BVDSS, Drain-Source Breakdown Voltage (V) ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.001 0.01 0.1 1 10 -ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=-10V VGS=-1.8V VGS=-4.5V VGS=-2.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 -IDR, Reverse Drain Current (A) -VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 120 140 160 180 200 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 100 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=-1.8V, ID=-2A VGS=-4.5V, ID=-4.3A VGS=-2.5V, ID=-2.5A -VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=-4.3A ID=-2.5A ID=-0.2A

CYStech Electronics Corp. Spec. No. : C778G6 Issued Date : 2012.02.10 Revised Date : 2012.10.09 Page No. : 7/9 MTS3572G6 CYStek Product Specification P-channel Characteristic Curves(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) -VGS(th),Threshold Voltage-(V) ID=-250μA Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) DC 10ms 100ms 1ms 100μs TA=25°C, Tj=150°C VGS=-4.5V Single Pulse 10μs Gate Charge Characteristics 0 2 4 6 8 1 01 21 41 61 82 0 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) VDS=-10V ID=-4.3A Transient Thermal Response Curves 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized EffectiveTransient Thermal Resistance D=0.5 0.2 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=180°C/W 0.1 0.05 Single Pulse 0.02 0.01

CYStech Electronics Corp. Spec. No. : C778G6 Issued Date : 2012.02.10 Revised Date : 2012.10.09 Page No. : 8/9 MTS3572G6 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C778G6 Issued Date : 2012.02.10 Revised Date : 2012.10.09 Page No. : 9/9 MTS3572G6 CYStek Product Specification TSOP-6 Dimension Marking: 6-Lead TSOP-6 Plastic Surface Mounted Package CYStek Package Code: G6 Style: Pin 1. Gate1 (G1) Pin 2. Source1 (S1) Pin 3. Drain2 (D2) Pin 4. Source2 (S2) Pin 5. Gate2 (G2) Pin 6. Drain1 (D1) 3572 □□□□ Device Name Date Code D 2.820 3.020 0.111 0.119 θ 0° 8° 0° 8° Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :

  • Lead : Pure tin plated.
  • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.