MTP8P10 MOTOROLA | Alldatasheet
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MOTOROLA SC (XSTRS/R F) b6E D MM 6367254 0098709 O00 MMOTL MOTOROLA m@ SEMICONDUCTOR SEE TECHNICAL DATA . 1 Designer's Data Sheet MTP8P10 Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate ‘TMOS POWER FET 7 8 AMPERES This TMOS Power FET is designed for medium voltage, high Rpsjon) = 0.4 OHM speed power switching applications such as switching regulators, 100 VOLTS converters, solenoid and relay drivers. © Silicon Gate for Fast Switching Speeds — Switching Times ® Specified at 100°C TMOS ® Designer's Data — Ipss, VpS(on): VGsith) and SOA Specified > at Elevated Temperature Rugged — SOA is Power Dissipation Limited @ Source-to-Drain Diode Characterized for Use With Inductive Loads MAXIMUM RATINGS Rating [_Symbor | vawe [uni | Drain-Gate Voltage (Rs = 1 MA) | voon [100 | vac _| \\V Gate-Source Voltage — Continuous Ves +20 Vde y — Non-repetitive (tp < 50 us) | VGsm +40 Vpk fy Drain Current — Continuous 8 ‘Adc Yf — Pulsed 25 UY Total Power Dissipation @ Tc = 25°C 5 Watts . Derate above 25°C 06 were [Operating and Storage Temperature Renge | Ty.Tatg | e501 | | CASE 221406 perating and Storage Temperature Range Tag ASE 221K THERMAL CHARACTERISTICS Therma! Resistance “Cw Junction to Case Resc 1.67 Junction to Ambient 70.208 a ae To-220 | Maximum Lead Temperature for Soldering Th °c Purposes, 1/8" from case for 5 seconds MOTOROLA TMOS POWER MOSFET DATA 3-315
MOTOROLA SC CXSTRS/R F) BBE D MM 6367254 0098710 822 MEMOTL MTP8P10 ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) [TT ehcteristie Sabot | tin] ax | uni] OFF CHARACTERISTICS Drain-Source Breakdown Voltage \\eR)DSS Vde (Vgg = 9, Ip = 0.25 mA} Zero Gate Voltage Drain Current loss Ade (Vps = Rated Voss, Ves = 0) 10 (Vp = Rated Vpgs, Vg = 0, Ty = 125°C) 100 Gate-Body Leakage Current, Forward (VggF = 20 Vdc, Vos = 0} [ icsse_ | — | 100 | nade | Gate-Body Leakage Current, Reverse (VGsR = 20 Vdc, Vs = 0) [ tcsse_ [| — | 100 | nade | ON CHARACTERISTICS* Gate Threshold Voltage Ve@sith) Vde (ps = Vos. !p = 1 mA) Ty = 100°C Static Drain-Source On-Resistance (Vgg = 10 Vdc, Ip = 4 Adc} [ Rpsion. | — | 04 | Ohm | Drain-Source On-Voltage (Vgg = 10 V) Voston) Vde (Ip = 8 Adc) (ip = 4 Adc, Ty = 100°C) DYNAMIC CHARACTERISTICS ‘SWITCHING CHARACTERISTICS* (Ty = 100°C} Turn-On Delay Time [tao | — [| » | Ry = 50 ohms] , igen Turn-Off Delay Time Seefigures9,13and1a |_ tan | — | 200 | a [25 | sam | | ve Gate-Source Charge Ip = Rated Ip, Vgg = 10 Vb wee) | = | [og ove | | ‘SOURCE DRAIN DIODE CHARACTERISTICS* cr 0 INTERNAL PACKAGE INDUCTANCE (TO-220) Internal Drain Inductance lg (Measured from the contact screw on tab to center of die) 3.5 (Typ) (Measured from the drain lead 0.25” from package to center of die) 45 (Typ) Internal Source Inductance ts 7.5 (Typ) (Measured from the source lead 0.25" from package to source bond pad.) _ *Pulse Test: Pulse Width < 300 js, Duty Cycle < 2% MOTOROLA TMOS POWER MOSFET DATA 3-316
TYPICAL ELECTRICAL CHARACTERISTICS. Figure 1. On-Region Characteristics Figure 2. Gate Threshold Voltage Variation
2.1 LOA a | [tT TTT» | |
8 Ao oo
Figure 3. Transfer Characteristics Figure 4. Normalized Breakdown Voltage
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7 See 4 tt
Figure 5. On-Resistance versus Drain Current Figure 6. On-Resistance Variation
2 Hie ON 3
Figure 7. Maximum Rated Forward Biased Figure 8. Maximum Rated Switching Figure 10. Thermal Response