MTP8P08 MOTOROLA | Alldatasheet
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MOTOROLA SC XSTRS/R F 14e°o ff e3e7254 ooaco23 2 ff MOTOROLA 7-37-.)] m= SEMICONDUCTOR SeaaEe re TECHNICAL DATA . Designer's Data Sheet MTM8P10 Power Field Effect Transistor MTP8P08 P-Channel Enhancement-Mode MTP8P10 Silicon Gate TMOS These TMOS Power FETs are designed for medium voltage, ‘TMOS POWER FETs high speed power switching applications such as switching regu- 8 AMPERES lators, converters, solenoid and relay drivers. rDS(on) = 0.4 OHM. © Silicon Gate for Fast Switching Speeds — Switching Times 89 and 100 vouTS ~~ Specified at 100°C TMos : 8 © Designer's Data — Ipsg. Vpsion): VGsith) and SOA Specified 3 at Elevated Temperature D. -_ @ Rugged — SOA is Power Dissipation Limited +t ‘© Source-to-Drain Diode Characterized for Use With Inductive Loads G s MAXIMUM RATINGS pe em oe] | Gate-Source Voltage — Continuous Ves Vde _ —Non-repaetitive (ty < 50 us) | _Vosm Vpk Drain Current — Continuous MTM8POs- — Pulsed MTM8P10 CASE 1-04 Total Power Dissipation @ Te = 25°C Watts [“ihacsewase ere" mT | | Tose [ Grerang ad Sorego Terpnctre Renee | Ty tag | -eoro reo | e_| THERMAL CHARACTERISTICS Thermal Resistance Junction to Case Rese y Junction to Amblont 70-204 Awa || yy, Moximum Lead Temperature for Soldering Th °c / Purposes, 1/8" from case for § seconds MTPSP0s: MTPeP10 CASE 2214-04 ‘TO-220AB Designer's Date fr “Worst Cass” Conditions — The Designer's Data Sheet parmits the design of most circuits enticely from the information presented. SOA Limit curves ~ representing boundaries on device charectertics ~ ore giver to fecileta "wort case” douigns MOTOROLA TMOS POWER MOSFET DATA 3-457
MOTOROLA Sc xSTRS/R FT"39—2) due o ff e3u7254 ooqo024 9 ff MTM/MTP8P08, 10 ELECTRICAL CHARACTERISTICS (Tc = 25°C unless othorwise noted) a OFF CHARACTERISTICS. Drein-Sourco Breakdown Voltage Vierv0ss (Was = 0, Ip = 0.26 mA) MTMMTPEPOS 80 MTMMTPEPI1O 100 Zero Gate Voltago Drain Current pAde (ps = Rated Voss: Vas = 0) Wos = Rated Vpgs. Vos = 0, Ty = 125°C) Gate-Body Leakage Current, Forward (VGsF = 20 Vdc, Vos = 0) [tcsse_ | — | 100 | nade | Gote-Body Leakage Current, Reverse (Vasn = 20 Vée, Vos = 0) [tossa [= [100 [nace ON CHARAGTERISTICS* Gate Threshold Voltage ge (ps = Vas: Ip = 1 mA) . = Ty = 100°C : 3e “Static Drain-Source On-Resistance (Vag = 10 Vdo, Ip = 4 Ade) | ros | — | 04 | Onm | pers Drain-Source On-Voltage (Vas = 10V) Vos(on) SE. lip = 8 Adc) lip = 4 Ado, Ty = 100°C) Fond Yanscnaices o5 = Wp = 7A ee DYNAMIC CHARAGTERISTICS /0s = 25 V, Vas = 0, Cees 5 es [eon [=o | SWITCHING CHARACTERISTICS® (Ty = 100°C) sie Se a ee Total Gate Charge [o, | save | 50 | [-Gaesoure charse |g PBatodipn Vas 30 | seiTye) | Gate-Drain Charge [mq | wie) | — ‘| ‘SOURCE DRAIN DIODE CHARAGTERISTICS* Ferward Gnas minmay Lv ae [eve] Forward Turn-On Time Ves = 0) [ton | _Limited by stray inductance [rere Recovery Tine | [oe [ome — | INTERNAL PACKAGE INDUGTANCE (TO-204) Internal Drain Inductanco 5 (Typ) (Measured from the contact screw on the header closer to the source pin and the center of the die) Internal Source Inductance 125 (Tye) (Measured from the source pin, 0.26" from the package to the source bond pad) INTERNAL PACKAGE INDUGTANCE (T0-220) Internal Draln inductance (Measured from the contact scrow on tab to center of die) 35 (Typ) (Measured from the drain lead 0.26" from package to center of die) 45 (Typ) Internal Souree Inductance bs 75 (Typ) (Measured from the source lead 0.26" from package to source bond pad.) Pulao Tost: Pulao Width = 200 na, Duty Cycle « 2%. MOTOROLA TMOS POWER MOSFET DATA 3-458
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Figure 3. Transfer Characteristics Figure 4. Normalized Breakdown Voltage Figure 5. On-Resistance versus Drain Current Figure 6, On-Resistance Variation
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Figure 10. Thermal Response
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Figure 13. Switching Test Circuit Figure 14. Switching Waveforms