MTP8N50E MOTOROLA | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

1Motorola TMOS Power MOSFET Transistor Device Data /C0068/C0101/C0115/C0105/C0103/C0110/C0101/C0114/C0039/C0115 /C0068/C0097/C0116/C0097 /C0083/C0104/C0101/C0101/C0116 /C0084/C0077/C0079/C0083 /C0069/C0045/C0070/C0069/C0084/C0046 /C0080/C0111/C0119/C0101/C0114 /C0070/C0105/C0101/C0108/C0100 /C0069/C0102/C0102/C0101/C0099/C0116 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114 N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

  • Robust High Voltage Termination
  • Avalanche Energy Specified
  • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
  • Diode is Characterized for Use in Bridge Circuits
  • IDSS and VDS(on) Specified at Elevated Temperature MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–to–Source Voltage VDSS 500 Vdc Drain–to–Gate Voltage (RGS = 1.0 M/C0087) VDGR 500 Vdc Gate–to–Source Voltage – Continuous Gate–to–Source Voltage – Non–repetitive (tp ≤ 10 ms) VGS VGSM ±20 ±40 Vdc Vpk Drain Current — Continuous @ TC = 25°C Drain Current — Continuous @ TC = 100°C Drain Current — Single Pulse (tp ≤ 10 /C0109s) ID ID IDM 8.0 5.0 Adc Apk Total Power Dissipation @ TC = 25°C Derate above 25°C PD 125 1.0 Watts W/°C Operating and Storage Temperature Range TJ, Tstg –55 to 150 °C Single Pulse Drain–to–Source Avalanche Energy – STARTING TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 8.0 Apk, L = 16 mH, RG = 25 /C0087) EAS 510 mJ Thermal Resistance – Junction–to–Case – Junction–to–Ambient R /C0113JC R /C0113JA 1.0 62.5 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 5 sec. TL 260 °C This document contains information on a new product. Specifications and information herein are subject to change without notice. E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. REV 2 Order this document by MTP8N50E/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA /C0077/C0084/C0080/C0056/C0078/C0053/C0048/C0069 TMOS POWER FET

8.0 AMPERES

500 VOLTS

R DS(on) = 0.8 OHM D S G CASE 221A–06, Style 5 TO-220AB  Motorola, Inc. 1996

/C0077/C0084/C0080/C0056/C0078/C0053/C0048/C0069

2 Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) V(BR)DSS 500 500 Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 500 Vdc, VGS = 0 Vdc) (VDS = 400 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS 250 1000 /C0109Adc Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS — — 100 nAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS , ID = 250 µAdc) Threshold Temperature Coefficient (Negative) VGS(th) 2.0 2.8 6.3 4.0 Vdc mV/°C Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 4.0 Adc) R DS(on) — 0.6 0.8 Ohms Drain–to–Source On–Voltage (VGS = 10 Vdc) (ID = 8.0 Adc) (ID = 4.0 Adc, TJ = 125°C) VDS(on) 5.0 7.2 6.4 Vdc Forward Transconductance (VDS = 15 Vdc, ID = 4.0 Adc) gFS 4.0 — — mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 Vdc V 0 Vdc C iss — 1450 1680 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) C oss — 190 246 Transfer Capacitance f = 1.0 MHz) C rss — 45.4 144 SWITCHING CHARACTERISTICS (2) Turn–On Delay Time (R C1 9 1 /C0087) td(on) — 15 50 ns Rise Time (Rgo +C 1 7 n=91/C0087) tr — 33 72 Turn–Off Delay Time (Rgo + C17n = 9.1 /C0087) td(off) — 40 150 Fall Time tf — 32 60 Gate Charge (see Figure 8) (V 400 Vd I 8 0 Ad Q T — 40 64 nC (see Figure 8) (VDS = 400 Vdc, ID = 8.0 Adc, Q 1 — 8.0 —( DS , D , VGS = 10 Vdc) Q 2 — 17 — Q 3 — 17.3 — SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage VSD Vdc (IS = 8.0 Adc, VGS = 0 Vdc) — 1.2 2.0 (IS = 8.0 Adc, VGS = 0 Vdc, TJ = 125°C) — 1.1 — Reverse Recovery Time (I 8 0 Ad V 0 Vd trr — 320 — ns (IS = 8.0 Adc, VGS = 0 Vdc, ta — 179 —(S , GS , dIS/dt = 100 A//C0109s) tb — 141 — Reverse Recovery Stored Charge Q RR — 3.0 — /C0109C INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25″ from package to center of die) LD — 4.5 — nH Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) LS — 7.5 — (1) Pulse Test: Pulse Width ≤ 300 /C0109s, Duty Cycle ≤ 2.0%. (2) Switching characteristics are independent of operating junction temperature.

4 Motorola TMOS Power MOSFET Transistor Device Data

Figure 7. Capacitance Variation Figure 8. High Voltage Capacitance Variation Figure 9. Gate–to–Source and Figure 10. Resistive Switching Time Variation Figure 11. Diode Forward Voltage versus Figure 12. Maximum Rated Forward Biased

/C0077/C0084/C0080/C0056/C0078/C0053/C0048/C0069

6 Motorola TMOS Power MOSFET Transistor Device Data

CASE 221A–06 ISSUE Y NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. STYLE 5: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 B Q H Z L V G N A K F 12 3 D SEATING PLANE–T– C ST U R J Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;JAPAN : Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315 INTERNET : http://Design–NET.com 51 Ting Kok R oad, Tai Po, N.T., Hong Kong. 852–26629298 MTP8N50E/D◊