MTP7P06 MOTOROLA | Alldatasheet
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MOTOROLA SC (XSTRS/R F) BBE D MM 6367254 0098699 33] MMOTL MOTOROLA @ SEMICONDUCTOR xy TECHNICAL DATA . 1 Designer's Data Sheet MTP7P06 Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate MOS POWER FET
7 AMPERES
This TMOS Power FET is designed for medium voltage, Rpsion) = 0.6 OHM high speed power switching applications such as switching 60 VOLTS regulators, converters, solenoid and relay drivers. © Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100°C © Designer's Data — Ipss, VoSion). VGsith) and SOA Specified at Elevated Temperature @ Rugged — SOA is Power Dissipation Limited 5 ~ SOA is Power Dissipa ; . © Source-to-Drain Diode Characterized for Use With Inductive Loads _T™os G MAXIMUM RATINGS | DrainSource Vote TMs | OMe | Drain-Gate Voltage Voor Vde (Rgs = 1 MQ) 0 Gate-Source Voltage — Continuous Ves +20 Vde — Non-repetitive (tp < 50 us) VGsm +40 Vpk Drain Current ify Continuous 7 Pulsed 2 Total Power Dissipation @ Tc = 25°C Watts Derate above 25°C wre CASE 2214-06 [Operating and Storage Temperature Range | Ty.Tewg | 650180 | C | To-220aB ‘THERMAL CHARACTERISTICS Thermal Resistance “CW Junction to Case 1.67 Junction to Ambient to20 | Rea | 625 | Maximum Lead Temperature for Soldering TL 260 ec Purposes, 1/8” from case for 5 seconds Designer's Data for “Worst Case” Conditions — The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. nn eee MOTOROLA TMOS POWER MOSFET DATA 3-305
MOTOROLA SC (XSTRS/R F) BBE D MM 6367254 0098700 983 MMOTL ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) ‘OFF CHARACTERISTICS Drain-Source Breakdown Voltage VipR)OSS 60 Vae (Vgg = 0, Ip = 0.25 mA) Zero Gate Voltage Drain Current Ade (Vg = Rated Vpgs, Vas = 0) - (Vps = Rated Vpss, Vg = 0, Ty = 125°C) = Gate-Body Leakage Current, Forward (Vggr = 20 Vdc, Vps = 0) lesse_ | — | 100 | nade Gate-Body Leakage Current, Reverse (Vgsr = 20 Vdc, Vps = 0) Icssa_ | — | 100 | Adc | ‘ON CHARACTERISTICS* Gate Threshold Voltage (Vpg = VGs. Ip — 1 mA) Vesith) 2 Ve Ty = 100°C 15 Static Drain-Source On-Resistance (Vgg = 10 Vdc, Ip = 3.5 Adc) Drain-Source On-Voltage (Veg = 10 Vb Vpsion) Vde ip = 7 Ade} lip = 35 Ado, Ty = 100°C) DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS" (Tj = 100°C) TurnOn Delay Time [ton | — | © | Rgen ~ 50 ohms) Turn-Off Delay Time See Figures 9,130nd14 | tao | | a a SOURCE DRAIN DIODE CHARACTERISTICS* Forward On-Voltage {lg = Rated tp Vsp 18ityp) | 25 | Vdc Forward Turn-On Time Ves = 0) ton Limited by stray inductance [ow [astm = =| INTERNAL PACKAGE INDUCTANCE (TO-220) Internal Drain Inductance la nH {Measured from contact screw on tab to center of die) 3.5 (Typ) (Measured from the drain lead 0.25" from package to center of die) 4.5 (Typ) Internal Source Inductance Ls 7.5 (Typ) (Measured from the source lead 0.25" from package to center of pad) *Pulse Test’ Pulse Width = 300s, Duty Cycle 2%. MOTOROLA TMOS POWER MOSFET DATA 3-306
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Figure 3. Transfer Characteristics Figure 4. Breakdown Voltage Variation Figure 5. On-Resistance versus Drain Current Figure 6. On-Resistance Variation
5 VAN 2" “ps = VEN
Figure 13. Gate Charge Figure 12. Capacitance Variation versus Gate-To-Source Voltage Figure 14. Switching Test Circuit Figure 15, Switching Waveforms