IRF220-223 FAIRCHILD | Alldatasheet

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. IL — . FAIRCHILD SEMICONDUCTOR __ ay DE 34b9b74 o027874 5 | 7 . Ss IRF220-223/IRF620-623 FAIRCHILD MTP7N18/7N20 T-39-1 ee ‘A Schlumberger Company N-Channel Power MOSFETs,

7 A, 150-200 V j

Power And Discrete Division Description ‘TO-204AA TO-220AB These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, ‘such as switching power supplies, converters, AC and DC H, motor controls, relay and solenoid drivers and other pulse SJ circuits, Wy, @ Low Rosjon) © Vag Rated at +20 V sooo scone 2 ® Silicon Gate for Fast Switching Speeds © Ings: Vosiony» Specified at Elevated Temperature ieee neest © Rugged . © Low Drive Requirements laeess areas © Ease of Paralleling MTP7N18 MTP7N20 Product Summary . Ip at Ip at ‘ . Part Number Voss Te = 25°C Te = 100°C Case Style E Notes For formation concerning connection dagram and package out, eer to Section i 2-87

. FAIRCHILD SEMICONDUCTOR eae nee 84 DE MP3469674 aonara7s 2 || ad . IRF220-223/1RF620-623 - : MTP7N18/7N20 j T-39-11 Maximum Ratings Rating 1RF220/222 Rating : 1RF620/622 Rating IRF222/223 ‘Symbol MTP7N20 MTP7N18 1RF622/623 Unit : Vper Drain to Gate Voltaget 150 Vv Ras = 20 k2 Ty. Teig | Operating Junction and 755 10 +150 | -85t0 +150 | -65 to +150 °C i t Storage Temporatures ! | T Maximum Lead Temperature 275 275 275 °C : i for Soldering Purposes, ' 1/8" From Case for 5 * Maximum Thermal Characteristics : [| IRF220 - 223/IRF620 ~ 623, MTP7N18/20 \\ Rac | Thermal Resistance, 1.67 “c/w i Junetion to Case } i Raa Thermal Resistance, 30/80 °C/W Junction to Ambient Po Total Power Dissipation 7% w ‘ at To = 25°C Electrical Characteristics (Tc = 25°C unless otherwise noted) Es Test Conditions Off Characteristics Vianjoss | Drain Source Breakdown Voltage’ | || Ves =0 V, Ip = 250 pA IRF220/222/620/622/ MTP7N20 1RF221/228/621/623 | ts | | loss Zero Gate Voltage Drain Curent | | 250 | HA __| Vos= Rated Voss, Vas=0 V uA | Vps=0.8x Rated Voss, Vos "0 V, To = 125°C Tess | Gate-Body Leakage Current nA | Vag = #20 V, Vos=0 V IRF220-228 £100 1RF620-623/MTP7N18/20 +800 A 2-88 pT — - ED

  • | . FAIRCHILD SEMICONDUCTOR ; 84 pe sye674 o0e787% 9 | i | IRF220-223/IRF620-623 MTP7N18/7N20 T-39-11 ; Electrical Characteristics (Cont) (Tc = 25°C unless otherwise noted) symbot | _charactrse mn | max [unit [Test conattons On Characteristics Vasity | Gate Threshold Voltage rs ee IRF220-223/1RF620-623 | 20 | 40 | Ip = 250 HA, Vos = Ves ~ == a IRF220/221/620/621 ee ‘ i IRF 222/223/622/623 | . MTP7N18/7N20 a a Ip=3.5A Vpsjon) | Drain-Source On-Voltage” | Le] Vas = 10 V; Ip=3.5 A MTP7N18/7N20 59 v Ves = 10 V; Ip=7.0 A Te = 100°C Dynamic Characteristic t Cass | Opt Capatancs || a0 fer t= Cs [Revere Tarte Cpsctancs [| 00 |» | i Switching Characteristics (Tc = 25°C, Figures 1, 2)° a taco | Turn Only Tne «P00 |e a A Vpo = 45 V Source-Drain Diode Characteristics Vso Diode Forward Voltage [te | Vv [p= 80a; Vos-0V Notes 1. Ty= #25°C to +150°C 2. Pulse width limited by Ty 3. Switching time measurements performed on LEM TR-58 test equipment. a ee 2-89

. FAIRCHILD SEMICONDUCTOR — “By DE i 3469674 0927877 it} r | soning Nee S ' . IRF220-223/IRF620-623 . . MTP7N18/7N20 == i : TF 39-11 j ! t Typical Electrical Characteristics | Figure 1 Switching Test Circuit Figure 2 Switching Waveforms Sw " . fe tom: i ‘taorr al aa + “on Svenrese™ )™ Tih se Sek i we rT 1 etm ——-| ' Typical Performance Curves

7 Figure 3 Output Characteristics Figure 4 hie Oran ore Resistance

Los “ESTEE hae 109 =I PZ | ere ‘ Fi i. LL iDb-RE IRE] , Paar }EEEey Ae Te LTTE ee taeroemmeony OF nace Figure 6 Temperature Varlation of Gate to Figure § Transfer Characteristics Source Threshold Voltage eT VOT a ERCP ee] PH A POST i, Wi PCCOENT IA PCHEEHEE RH ZA ©. LAT POCO] 2-90 .