MTP75N05HD MOTOROLA | Alldatasheet

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1Motorola TMOS Power MOSFET Transistor Device Data /C0068/C0101/C0115/C0105/C0103/C0110/C0101/C0114/C0039/C0115 /C0068/C0097/C0116/C0097 /C0083/C0104/C0101/C0101/C0116 /C0072/C0068/C0084/C0077/C0079/C0083 /C0069/C0045/C0070/C0069/C0084 /C0080/C0111/C0119/C0101/C0114 /C0070/C0105/C0101/C0108/C0100 /C0069/C0102/C0102/C0101/C0099/C0116 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114 N–Channel Enhancement–Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. This new energy–efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low–voltage, high–speed switching applications in power supplies, converters and PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.

  • Ultra Low RDS(on), High–Cell Density, HDTMOS
  • SPICE Parameters Available
  • Diode is Characterized for Use in Bridge Circuits
  • Diode Exhibits High Speed, Yet Soft Recovery
  • IDSS and VDS(on) Specified at Elevated Temperature
  • Avalanche Energy Specified MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–Source Voltage VDSS 50 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ ) VDGR 50 Vdc Gate–Source Voltage — Continuous VGS ± 20 Vdc Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) ID ID IDM 225 Adc Apk Total Power Dissipation Derate above 25°C PD 150 Watts W/°C Operating and Storage T emperature Range TJ, Tstg –55 to 175 °C Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vpk, IL = 75 Apk, L = 0.177 mH, RG = 25 Ω ) EAS 500 mJ Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient R θJC R θJA 1.00 62.5 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics— are given to facilitate “worst case” design. Designer’s, E–FET and HDTMOS are trademarks of Motorola Inc. Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Order this document by MTP75N05HD/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA  Motorola, Inc. 1995 CASE 221A–06, Style 5 TO–220AB /C0077/C0084/C0080/C0055/C0053/C0078/C0048/C0053/C0072/C0068 TMOS POWER FET

75 AMPERES

R DS(on) = 9.5 mΩ

50 VOLTS

D S G

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2 Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (C pk ≥ 2.0)(3) (VGS = 0 V, ID = 250 µAdc) Temperature Coefficient (Positive) V(BR)DSS 54.9 Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 50 Vdc, VGS = 0) (VDS = 50 Vdc, VGS = 0, TJ = 150°C) IDSS 100 µAdc Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS — — 100 nAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (C pk ≥ 1.5)(3) (VDS = VGS , ID = 250 µAdc) Temperature Coefficient (Negative) VGS(th) 2.0 6.3 4.0 Vdc mV/°C Static Drain–Source On–Resistance (C pk ≥ 3.0)(3) (VGS = 10 Vdc, ID = 37.5 Adc) R DS(on) — 7.0 9.5 mW Drain–Source On–Voltage (VGS = 10 Vdc) (ID = 75 Adc) (ID = 37.5 Adc, TJ = 150°C) VDS(on) 0.86 0.64 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 20 Adc) gFS 15 — — mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) (Cpk ≥ 2.0)(2) C iss — 2600 2900 pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) (Cpk ≥ 2.0)(2) C oss — 1000 1100 Transfer Capacitance (Cpk ≥ 2.0)(2) C rss — 230 275 SWITCHING CHARACTERISTICS (2) Turn–On Delay Time (VDD = 25 Vdc, ID = 75 Adc, VGS = 10 Vdc, R G = 9.1 Ω ) td(on) — 15 30 ns Rise Time (VDD = 25 Vdc, ID = 75 Adc, VGS = 10 Vdc, R G = 9.1 Ω ) tr — 170 340 Turn–Off Delay Time VGS = 10 Vdc, R G = 9.1 Ω ) td(off) — 70 140 Fall Time G = 9.1 Ω ) tf — 100 200 Gate Charge (VDS = 40 Vdc, ID = 75 Adc, VGS = 10 Vdc) Q T — 71 100 nC (VDS = 40 Vdc, ID = 75 Adc, VGS = 10 Vdc) Q 1 — 13 —(VDS = 40 Vdc, ID = 75 Adc, VGS = 10 Vdc) Q 2 — 33 — Q 3 — 26 — SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (IS = 75 Adc, VGS = 0) (IS = 75 Adc, VGS = 0, TJ = 150°C) (Cpk ≥ 10)(2) VSD 0.97 0.88 1.1 Vdc Reverse Recovery Time (IS = 37.5 Adc, VGS = 0, dIS/dt = 100 A/µs) trr — 57 — ns (IS = 37.5 Adc, VGS = 0, dIS/dt = 100 A/µs) ta — 40 —(IS = 37.5 Adc, VGS = 0, dIS/dt = 100 A/µs) tb — 17 — Reverse Recovery Stored Charge Q RR — 0.17 — µC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of die) (Measured from the drain lead 0.25″ from package to center of die) LD 3.5 4.5 nH Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) LS — 7.5 — nH (1) Pulse Test: Pulse Width ≤/n636861720000000000000000300 µs, Duty Cycle ≤ 2%. (2)Switching characteristics are independent of operating junction temperature. (3) Reflects typical values. C pk = Max limit – Typ 3 x SIGMA

4 Motorola TMOS Power MOSFET Transistor Device Data

by recognizing that the power MOSFET is charge controlled. by current from the generator. and Q2 and VGSP are read from the gate charge curve. on–state when calculating td(off). voltage at the source which reduces the gate drive current. tion of drain current, the mathematical solution is complex. sure and, consequently, is not specified. Figure 7. Capacitance Variation

6 Motorola TMOS Power MOSFET Transistor Device Data

Figure 12. Maximum Rated Forward Biased Figure 13. Maximum Avalanche Energy versus Figure 14. Thermal Response

/C0077/C0084/C0080/C0055/C0053/C0078/C0048/C0053/C0072/C0068 7Motorola TMOS Power MOSFET Transistor Device Data PACKAGE DIMENSIONS CASE 221A–06 ISSUE Y NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 B Q H Z L V G N A K F 1 2 3 D SEATING PLANE–T– C ST U R J STYLE 5: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN

/C0077/C0084/C0080/C0055/C0053/C0078/C0048/C0053/C0072/C0068

8 Motorola TMOS Power MOSFET Transistor Device Data

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. MTP75N05HD/D /C0042/C0077/C0084/C0080/C0055/C0053/C0078/C0048/C0053/C0072/C0068/C0047/C0068/C0042