MTP75N03HDL

MTP75N03HDL ONSEMI | Alldatasheet

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 Semiconductor Components Industries, LLC, 2000 September, 2004 − Rev. XXX

1 Publication Order Number:

75 Amps, 25 Volts, Logic Level

N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low−voltage, high−speed switching applications in power supplies, converters and PWM motor controls, and inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.

• SPICE Parameters Available
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Avalanche Energy Specified MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage VDSS 25 Vdc Drain−Gate Voltage (RGS = 1.0 MΩ ) VDGR 25 Vdc Gate−Source Voltage − Continuous − Single Pulse (tp ≤ 10 ms) VGS ± 15 ± 20 Vdc Vpk Drain Current − Continuous − Continuous @ 100°C − Single Pulse (tp ≤ 10 µs) ID ID IDM 225 Adc Apk Total Power Dissipation Derate above 25°C PD 150 1.0 Watts W/°C Operating and Storage Temperature Range TJ, Tstg −55 to 175 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 75 Apk, L = 0.1 mH, RG = 25 Ω ) EAS 280 mJ Thermal Resistance −Junction to Case −Junction to Ambient R θJC R θJA 1.0 62.5 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C

75 AMPERES

25 VOLTS

R DS(on) = 9 mΩ Preferred devices are recommended choices for future use and best overall value. Device Package Shipping

ORDERING INFORMATION

MTP75N03HDL TO−220AB 50 Units/Rail TO−220AB CASE 221A STYLE 5 1 2 http://onsemi.com N−Channel D S G MARKING DIAGRAM & PIN ASSIGNMENT MTP75N03HDL = Device Code LL = Location Code Y = Year WW = Work Week MTP75N03HDL LLYWW Gate Source Drain Drain

http://onsemi.com ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−Source Breakdown Voltage (C pk ≥ 2.0) (Note 3.) (VGS = 0 Vdc, ID = 0.25 mA) Temperature Coefficient (Positive) V(BR)DSS 25 − − Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 25 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS 100 500 µAdc Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 V) IGSS − − 100 nAdc ON CHARACTERISTICS (Note 1.) Gate Threshold Voltage (C pk ≥ 3.0) (Note 3.) (VDS = VGS , ID = 0.25 mA) Temperature Coefficient (Negative) VGS(th) 1.0 1.5 2.0 Vdc mV/°C Static Drain−Source On−Resistance (C pk ≥ 2.0) (Note 3.) (VGS = 5.0 Vdc, ID = 37.5 Adc) R DS(on) − 6.0 9.0 m Ω Drain−Source On−Voltage (VGS = 10 Vdc) (ID = 75 Adc) (ID = 37.5 Adc, TJ = 125°C) VDS(on) − − 0.68 0.6 Vdc Forward Transconductance (VDS = 3.0 Vdc, ID = 20 Adc) gFS 15 55 − mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 Vd V 0V d C iss − 4025 5635 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) C oss − 1353 1894 Reverse Transfer Capacitance f = 1.0 MHz) C rss − 307 430 SWITCHING CHARACTERISTICS (Note 2.) Turn−On Delay Time td(on) − 24 48 ns Rise Time (VDS = 15 Vdc, ID = 75 Adc, VGS =50V d c tr − 493 986 Turn−Off Delay Time VGS = 5.0 Vdc, R g = 4.7 Ω ) td(off) − 60 120 Fall Time R g 4.7 Ω ) tf − 149 300 Gate Charge Q T − 61 122 nC (VDS = 24 Vdc, ID = 75 Adc, Q 1 − 14 28(VDS 24 Vdc, ID 75 Adc, VGS = 5.0 Vdc) Q 2 − 33 66 Q 3 − 27 54 SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 75 Adc, VGS = 0 Vdc) (IS = 75 Adc, VGS = 0 Vdc, TJ = 125°C) VSD 0.97 0.87 1.1 Vdc Reverse Recovery Time trr − 58 − ns (IS = 75 Adc, VGS = 0 Vdc, ta − 27 −(IS 75 Adc, VGS 0 Vdc, dIS/dt = 100 A/µs) tb − 30 − Reverse Recovery Stored Charge Q RR − 0.088 − µC 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. 3. Reflects typical values. C pk = Max limit − Typ 3 x SIGMA

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current Figure 5. On−Resistance Variation with Figure 6. Drain−To−Source Leakage

4.5 V5 V

be charged by current from the generator. and Q2 and VGSP are read from the gate charge curve. on−state when calculating td(off). is difficult to measure and, consequently, is not specified. maintain a value of unity regardless of the switching speed. however, snubbing reduces switching losses. Figure 7. Capacitance Variation

5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 8. Gate−To−Source and Drain−To−Source Figure 9. Resistive Switching Time determining switching losses, radiated noise, EMI and RFI. controlled by the device clearing the stored charge. values less than 0.5 are considered snappy. recovery time and lower switching losses. Figure 10. Diode Forward Voltage versus Current

http://onsemi.com PACKAGE DIMENSIONS TO−220 THREE−LEAD TO−220AB CASE 221A−09 ISSUE AA STYLE 5: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 B Q H Z L V G N A K F 12 3 D SEATING PLANE−T− C ST U R J ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION CENTRAL/SOUTH AMERICA: Spanish Phone: 303−308−7143 (Mon−Fri 8:00am to 5:00pm MST) Email: ONlit−spanish@hibbertco.com Toll−Free from Mexico: Dial 01−800−288−2872 for Access − then Dial 866−297−9322 ASIA/PACIFIC: LDC for ON Semiconductor − Asia Support Phone : 303−675−2121 (Tue−Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001−800−4422−3781 Email: ONlit−asia@hibbertco.com JAPAN : ON Semiconductor, Japan Customer Focus Center 4−32−1 Nishi−Gotanda, Shinagawa−ku, Tokyo, Japan 141−0031 Phone : 81−3−5740−2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. MTP75N03HDL/D NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303−675−2167 or 800−344−3810 Toll Free USA/Canada N. American Technical Support: 800−282−9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor − European Support German Phone : (+1) 303−308−7140 (Mon−Fri 2:30pm to 7:00pm CET) Email: ONlit−german@hibbertco.com French Phone : (+1) 303−308−7141 (Mon−Fri 2:00pm to 7:00pm CET) Email: ONlit−french@hibbertco.com English Phone: (+1) 303−308−7142 (Mon−Fri 12:00pm to 5:00pm GMT) Email: ONlit@hibbertco.com EUROPEAN TOLL−FREE ACCESS*: 00−800−4422−3781 *Available from Germany, France, Italy, UK, Ireland