MTP6N10 MOTOROLA | Alldatasheet
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MOTOROLA SC (XSTRS/R F) BBE D MM@ 6367254 0098684 900 MENOTL MOTOROLA = SEMICONDUCTOR so TECHNICAL DATA ; ’ Designer's Data Sheet MTP6N10 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate MOS POWER FET - 6 AMPERES This TMOS Power FET is designed for high speed power switch- Rps(on) = 0.8 OHM ing applications such as switching regulators, converters, solenoid @ 100 VOLTS and relay drivers. TMOS © Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100°C © Designer's Data — Ipgs, VpS(on)- VGsith) and SOA Specified o at Elevated Temperature @ Rugged — SOA is Power Dissipation Limited @ Source-to-Drain Diode Characterized for Use With Inductive Loads s MAXIMUM RATINGS [ating TT svembot [Value [unit] [ DreinSource Voltage | Voss | 100 | te / Drain-Gate Voltage Vper Vde 0 (Rgs = 1 Mo) Gate-Source Voltage — Continuous Ves £20 Vde A — Non-repetitive (tp = 50 us) | VGSM +40 Vpk fy Ns Drain Current YJ Continuous “ Pulsed | ranean CASE 221A-06 Total Power Dissipation @ Tc = 25°C Watts [Operating and Storage Temperature Renge | Tu Tag | —estorso [cf THERMAL CHARACTERISTICS . Thermal Resistance — Junction to Case Rec “CW — Junction to Ambient Resa Maximum Lead Temperature for Soldering TL 260 °c Purposes, 1/8" from case for 5 seconds Designer's Data for “Worst Case” Conditions — The Designer's Data Sheet permits the design of most circuits entirely from the information presented. MOTOROLA TMOS POWER MOSFET DATA 3-290
MOTOROLA SC (XSTRS/P F) BOE D MM 6367254 0098685 847 MEMOTL MTP6N10 ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) OFF CHARACTERISTICS Drain-Source Breakdown Voltage \\(eR)DSS Vde (Ves = 0, Ip = 0.25 mA) Zero Gate Voltage Drain Current ‘bss wAdc \\Vps = Rated Voss, Ves = 0) (Vpg = Rated Vpss. Veg = 0, Ty = 125°C) Gate-Body Leakage Current, Forward (V@sr = 20 Vdc, Vpg = 0) Gate-Body Leakage Current, Reverse (esr = 20 Vde, Vg = 0) ON CHARACTERISTICS" Gate Threshold Voltage Vesith) Vde (Vos = Ves ip = 1 mA) 45 Ty = 100°C 4 Static Drain-Source On-Resistance (gs = 10 Vde, Ip = 3 Ade) Drain-Source On-Voltage (Vag = 10 V) Vpsion) Vae ip = 6 Ade} lip = 3 Ade, Ty = 100°C) Forward Transconductance (ps = 18, Ip = 3A) DYNAMIC CHARACTERISTICS re ‘SWITCHING CHARACTERISTICS* (Tj = 100°C) [ison] ise Time gen = 20 heel =a SOURCE DRAIN DIODE CHARACTERISTICS* Forward On-Voltage lig = Rated 1p Vsp__|_1.3(Typ) Reverse Recovery Time tir 250(Typ) [| — | ns | INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance la nH (Measured from the contact screw on tab to center of die) 3.5 (Typ) - (Measured from the drain lead 0.25” fram package to center of die} { 4.5 (Typ) | _ Internal Source Inductance a 7.5 (Typ) (Measured from the source lead 0.25" from package to source bond pad.) *Pulse Test’ Pulse Width = 300 us, Duty Cycle = 2% MOTOROLA TMOS POWER MOSFET DATA 3-291