MTP5N35

IRF330-333 FAIRCHILD | Alldatasheet

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. FAIRCHILD SEMICONDUCTOR a4 pe auesezy 0027899 0 Ir ' | . a IRF330-333/IRF730-733 : . EAIRCHILD MTM/MTP5N35/5N40 ‘A Schlumberger Company N-Channel Power MOSFETs,

5.5 A, 350 V/400 V

Power And Discrete Division 7-39-11 | | Description TO-204AA TO-220AB | t These devices are n-channel, enhancement mode, power i MOSFETs designed especially for high voltage, high speed \\ applications, such as off-line switching power supplies, WH, : UPS, AC and DC motor controls, relay and solenoid SY ; rivers. Wy | © Vas Rated at +20 V 2 =A : © Silicon Gate for Fast Switching Speeds sooner e000 i ® Ipss; Vos(ony SOA and Vasitn) Specified at Elevated IRF330 IRF730 ° iia IRF331 IRF731 IRF332 IRF732 i IRF333 IRF733 MTM5N35- MTP5N35° Maximum Ratings MTMEN40 MTPENAO Rating Rating IRF330/332 1RF331/333 IRF730/732 IRF731/733 Symbol MTM/MTPSN40 MTM/MTP5N35, Unit Voar _| Drain to Gate Voltage Vv Rigs = 1.0 MO. Ty, Tetg | Operating Junction and —55 to +150 55 to +150 °C ' Storage Temperature u Th Maximum Lead Temperature 276 275 mer for Soldering Purposes, 1/8" From Case for 5 s Maximum On-State Characteristics IRF330/331 IRF332/333 MTM5N35/40 IRF730/731 IRF732/733 MTP5N35/40 Rs (or) | Static Drain-to-Source 15 a On Resistance lo Drain Current a Continuous Pulsed Maximum Thermal Characteristics Rac Thermal Resistance, 1.67 1.67 1.67 °C/W Junction to Case Pp Total Power Dissipation 75 75 75 Ww at To = 25°C Notes . For formation concerning connection dagram and package out, aero Section EEE! 2-112 . EST _. . os

. FAIRCHILD SEMICONDUCTOR _ ay a Er ooe7aoo 2 ff : IRF330-333/IRF730-733 | 1-39-11 ; -)) SSS Electrical Characteristics (Tc = 25°C unless otherwise noted) Off Characteristics Veenjoss | Drain Source Breakdown Voltage’ | | TS Ves =0 V, Ip= 250 pA 1RF330/332/730/732 | 400 [si ! 1RF931/993/731/733 [so | | B HA | Vps=0.8xRated Voss, IRF330-933 +100 IRF730-733 +500 On Characteristics Rosjon) | Static Drain-Source On-Resistance* ———e Vos = 10 V, Ip=3.0 A . IRF990/331/730/731 [| to | IRF332/333/732/733 re Dynamic Characteristics Ca | Reverse Taser Cpacanss | [0 | oF] Switching Characteristics (To = 25°C, Figures 12, 19) tig [Turn bay Te as] a Vpp = 180 V Source-Drain Diode Characteristics 1RF930/331/730/731 v Is=5.5 A; Vas=0 V a 2-113

‘ cP ge i ee FAIRCHILD SEMICONDUCTOR ay pe Jayes74 goe7901 4 T ! : : MTM/MTP5N35/5N40 7-39-11 H Electrical Characteristics (To = 25°C unless otherwise noted) i ! i : eymoot | Graractenoue [win [tox [uot _| Test Conditions | i Off Characteristics : : § i Veeryoss | Drain Source Breakdown Voltage" es ee Vas =0 V, Ip = 5.0 mA | ' Ipss | Zero Gate Voltage Drain Current mA | Vpg=0.85x Rated Voss. : Ves =0 V mA | Vps=0.85x Rated Voss, : Vas =0 V, To = 100°C : On Characteristics t Vasqn | Gate Threshold Voltage [20 | 45 | V__ | ton1.0 mA, Vos~Vos 15 40 v Ip=1.0 mA, Vos = Ves To = 100°C Rosion) | Static Drain-Source On-Resistance* [| 0 | 2 | Vas =10 V, Ilp=25 A Vps(on) | Drain-Source On-Voltage* Vv Vas = 10 V; Ip=2.5 A Vv | Vag=10 V, lp=5.0 A V__| Vos=10 V, p= 25 A To = 100°C Dynamic Characteristics Cres Ravarse Transter Capacitance | ——«|_—=—s80—s| FC Switching Characteristics (To = 26°C, Figures 12, 13)° : [Riso Time tela ee : & Rise Time [00 [ns | ees B Q, Total Gate Charge nc Vas = 10 V, Ip=7.0 A i Vop = 180 V ‘ Notes 1. Ty= 425°C to +150°C 2. Pulse test: Puiso width <00 ju8, Duty oye <1% 15. Switching time measurements performed on LEM TR-S8 test equipment EEE ESSERE Enel 2-114 . Sau Beng - ee a

FAIRCHILD SEMICONDUCTOR ay pe suesuz4 oo02790e 4 Tr . ee . IRF330-333/IRF730-733 . MTM/MTP5N35/5N40 T-39-11 Typical Performance Curves Figures 4-6 for IRF332/333/732/733 only. . Figure 2 Static Drain to Source Resistance | Figure 1 Output Characteristics vs Drain Current i ‘pital eT ,COUmnRReee COTA i SERRRERDERE - pCO ra fable LTT LEVEE ; meen eEED i | 7A ee" LET | oy os 4 — : ‘7 AReERREEN sated bel | TPE : WARE ee] (ATT elon cont ace ohn cme Figure 3 Transfer Characteristics Figure 4 Output Choracteristion : a fe ‘ Pett H

7 COC +5 el el

i | a i (LU Ae | HERA CO ie | Oaannaedon eo /i | UAT * LA TALL (ET aA re (AEE ety Vestine” wma Figure § Static Drain to Source On-Resistance vs Drain Current Figure 6 Transfer Characteristics i Oe] *‘CfeteT TTT] H HT faneena Ha a Peet Oooo Peer TT os ae Poet i. ELA gL : i FEEL Bey Ae t LEE TTT TTT Le TT | | rc a i 2415 Py - ee . mJ

• ‘FAIRCHILD semzconnucton.———S~SHSC BHU ORTHO iniiieeenieanhha hse hiatal n lA : : IRF330-333/IRF730-733 MTM/MTP5N35/5N40 ; T-39-11 : ; Typical Performance Curves (Cont) | Figure 7 Temperature Variation of Gate to Source Threshold Voltage Figure 8 Capacitance vs Drain to Source Voltage OOo Coos TRC se SO RURRSEREEE LoS PTO SAE CEE COTTE TTT eo PCroeee -WEEEEA ‘-—wnoTon TeuPERATURE—c © ar onsirosuevomery Figure 9 Gate to Source Voltage vs Total Gate = Charge Figure 10 Forward Biased Sate Operating Area OTT ER | RRS je _ BOSSE CO NSH ) Pope 1p . ie py cannes PLAST CC eee OTT TT eames | IT | © romlemecumtne © ceoounlrosomoewamony Figure 11 Transient Thermal Resistance

3 ESE SSeS

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