MTP5N20 MOTOROLA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
MOTOROLA SC {XSTRS/R F} b8E Mm 6367254 0098674 Th) MP MOTL MOTOROLA @ SEMICONDUCTOR So TECHNICAL DATA . , Designer’s Data Sheet MTP5N20 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET This TMOS Power FET is designed for high voltage, high speed Ri ba AMPERES 4 power switching applications such as switching regulators, con- lo ln VOLTS verters, solenoid and relay drivers. TMOsS ®@ Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100°C © Designer's Data — Ipgg, Vps(on), VGSi(th) and SOA Specified at Elevated Temperature 8 @ Rugged — SOA is Power Dissipation Limited ® Source-to-Drain Diode Characterized for Use With Inductive Loads G MAXIMUM RATINGS {Rating Symbot | Vaue [unit | [ Drain-Source Votage | Moss | 200 ve Drain-Gate Voltage VpcR 200 Vde (Reg = 1M) Gate-Source Voltage — Continuous Ves +20 Vde y, — Non-repetitive (tp < 50 us) VGsmM +40 Vpk Wy Drain Current fi Continuous Pulsed Total Power Dissipation @ Tc = 25°C 75 Watts Taswsmmme | as | wre) | ease znon TO-220AB THERMAL CHARACTERISTICS: Thermal Resistance °C Junction to Case Rec 1.67 Junction to Ambient ee Maximum Lead Temperature for Soldering TL °c Purposes, 1/8” from case for 5 seconds Designer's Data for “Worst Case” Conditions — The Designer's Data Sheet permits the design of most circurts entirely from the information presented a MOTOROLA TMOS POWER MOSFET DATA 3-280
MOTOROLA SC {XSTRS/R F} GSE @™ £3567254 0098675 1T8 ME MOTL ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) OFF CHARACTERISTICS Drain-Source Breakdown Voltage VBR)DSS Vde (VGs = 0, Ip = 0.25 mA) MTP5N20 Zero Gate Voltage Drain Current ‘bss Ade (ps = Rated Voss. Ves = 0) (ps = Rated Voss, Ves = 0, Ty = 125°C) Gate-Body Leakage Current, Forward (VqgF = 20 Vde, Vpg ~ 0) [icsse_ | — | 100 [| made | Gate-Body Leakage Current, Reverse (VGgp = 20 Vdc, Vps = 0) [tcsse_ [| — | 100 nAde ON CHARACTERISTICS* Gate Threshold Voltage Vesith) Vde (ps = Ves. Ip = 1 mA) Ty = 100°C Static Drain-Source On-Resistance (Vg = 10 Vde, !p = 1.25 Ade) Rosion) | — | [ohm | Drain-Source On-Voltage (Vgg = 10 V) Vpsion) Vae (ip = 5 Ade) {Ip = 2.5 Adc, Ty = 100°C) Forward Transconductance (Vpg = 18 V, Ip = 2.6 A) as | 15 | — | mhos | DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance | See Figure 11 [crs | — | 100 ‘SWITCHING CHARACTERISTICS* (T, — 100°C) Turn-On Delay Time talon} — [| » | os - Rgen = 50 ohms) < | 60 Gate-Source Charge | Ip=Ratedip,Ves=10V) | ys | 4ctyp) | — ‘| SOURCE DRAIN DIODE CHARACTERISTICS* Reverse Recovery Time ter 300 (Typ) = [ss | INTERNAL PACKAGE INDUCTANCE (TO-220) Internal Drain Inductance la nH (Measured from the contact screw on tab to center of die) 35 (Typ) (Measured from the drain lead 0.25" from package to center of die) 45 (Typ) Internal Source Inductance [ts 7.8 (Typ) (Measured from the source lead 0.25" from package to source bond pad.)| “Pulse Test Pulse Width = 300 us, Duty Cycle = 2% a MOTOROLA TMOS POWER MOSFET DATA 3-281
2 See NG a SS
2 SNe =f Fa ff
2 VU TNA 6g TT TT Pr
Figure 7. Maximum Rated Forward Biased Figure 8. Maximum Rated Switching
1 TIME ims)
Figure 10. Thermal Response