MTP50P03HDLG

MTP50P03HDL ONSEMI | Alldatasheet

Document overview

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• PDF pages: 8

Technical content

Features

• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Pb−Free Package is Available* MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage VDSS 30 Vdc Drain−Gate Voltage (RGS = 1.0 M/C0087) VDGR 30 Vdc Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) VGS VGSM ± 15 ± 20 Vdc Vpk Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 /C0109s) ID ID IDM 150 Adc Apk Total Power Dissipation Derate above 25°C PD 125 1.0 W W/°C Operating and Storage Temperature Range TJ, Tstg −55 to 150 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, Peak IL = 50 Apk, L = 1.0 mH, RG = 25 /C0087) EAS 1250 mJ Thermal Resistance, Junction−to−Case Junction−to−Ambient, when mounted with the minimum recommended pad size R/C0113JC R/C0113JA 1.0 62.5 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. D S G P−Channel

50 AMPERES, 30 VOLTS

RDS(on) = 25 m/C0087 Preferred devices are recommended choices for future use and best overall value. Device Package Shipping

ORDERING INFORMATION

MTP50P03HDL TO−220AB 50 Units/Rail TO−220AB CASE 221A STYLE 5 1 2 MARKING DIAGRAM & PIN ASSIGNMENT M50P03HDL = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package M50P03HDLG AYWW Gate Source Drain Drain http://onsemi.com MTP50P03HDLG TO−220AB (Pb−Free)

50 Units/Rail

http://onsemi.com ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (C pk ≥ 2.0) (Note 3) (VGS = 0 Vdc, ID = 250 /C0109Adc) Temperature Coefficient (Positive) V(BR)DSS Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS 1.0 /C0109Adc Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc) IGSS − − 100 nAdc ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (C pk ≥ 3.0) (Note 3) (VDS = VGS, ID = 250 /C0109Adc) Threshold Temperature Coefficient (Negative) VGS(th) 1.0 1.5 4.0 2.0 Vdc mV/°C Static Drain−to−Source On−Resistance (C pk ≥ 3.0) (Note 3) (VGS = 5.0 Vdc, ID = 25 Adc) RDS(on) − 0.020 0.025 /C0087 Drain−to−Source On−Voltage (VGS = 10 Vdc) (ID = 50 Adc) (ID = 25 Adc, TJ = 125°C) VDS(on) 0.83 1.5 1.3 Vdc Forward Transconductance (VDS = 5.0 Vdc, ID = 25 Adc) gFS 15 20 − mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss − 3500 4900 pF Output Capacitance Coss − 1550 2170 Transfer Capacitance Crss − 550 770 SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time (VDD = 15 Vdc, ID = 50 Adc, VGS = 5.0 Vdc, RG = 2.3 /C0087) td(on) − 22 30 ns Rise Time tr − 340 466 Turn−Off Delay Time td(off) − 90 117 Fall Time tf − 218 300 Gate Charge (See Figure 8) (VDS = 24 Vdc, ID = 50 Adc, VGS = 5.0 Vdc) QT − 74 100 nC Q1 − 13.6 − Q2 − 44.8 − Q3 − 35 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS =50 Adc, VGS = 0 Vdc) (IS = 50 Adc, VGS = 0 Vdc, TJ = 125°C) VSD 2.39 1.84 3.0 Vdc Reverse Recovery Time (See Figure 15) (IS = 50 Adc, VGS = 0 Vdc, dIS/dt = 100 A//C0109s) trr − 106 − ns ta − 58 − tb − 48 − Reverse Recovery Stored Charge QRR − 0.246 − /C0109C INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of die) (Measured from the drain lead 0.25″ from package to center of die) LD 3.5 4.5 nH Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) LS − 7.5 − nH 1. Pulse Test: Pulse Width ≤ 300 /C0109s, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. 3. Reflects typical values. C pk = Max limit − Typ 3 x SIGMA

be charged by current from the generator. and Q2 and VGSP are read from the gate charge curve. on−state when calculating td(off). is difficult to measure and, consequently, is not specified. maintain a value of unity regardless of the switching speed. however, snubbing reduces switching losses. Figure 7. Capacitance Variation

http://onsemi.com PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AB NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. STYLE 5: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.020 0.055 0.508 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 B Q H Z L V G N A K F 12 3 D SEATING PLANE−T− C ST U R J ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 MTP50P03HDL/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative