MTP50P03HDL MOTOROLA | Alldatasheet
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1Motorola TMOS Power MOSFET Transistor Device Data /C0068/C0101/C0115/C0105/C0103/C0110/C0101/C0114/C0039/C0115 /C0068/C0097/C0116/C0097 /C0083/C0104/C0101/C0101/C0116 /C0072/C0068/C0084/C0077/C0079/C0083 /C0069/C0045/C0070/C0069/C0084/C0046 /C0080/C0111/C0119/C0101/C0114 /C0070/C0105/C0101/C0108/C0100 /C0069/C0102/C0102/C0101/C0099/C0116 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114 P–Channel Enhancement–Mode Silicon Gate This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commuta- tion modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
- Avalanche Energy Specified
- Source–to–Drain Diode Recovery Time Comparable to a Dis- crete Fast Recovery Diode
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–Source Voltage VDSS 30 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ ) VDGR 30 Vdc Gate–Source Voltage — Continuous — Non–Repetitive (tp ≤ 10 ms) VGS VGSM ± 15 ± 20 Vdc Vpk Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) ID ID IDM 150 Adc Apk Total Power Dissipation Derate above 25°C PD 125 1.0 Watts W/°C Operating and Storage Temperature Range TJ, Tstg –55 to 150 °C Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, Peak IL = 50 Apk, L = 1.0 mH, RG = 25 Ω) EAS 1250 mJ Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient, when mounted with the minimum recommended pad size R θJC R θJA 1.0 62.5 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Designer’s, E–FET and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Order this document by MTP50P03HDL/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA Motorola, Inc. 1997 /C0077/C0084/C0080/C0053/C0048/C0080/C0048/C0051/C0072/C0068/C0076 TMOS POWER FET LOGIC LEVEL
50 AMPERES
30 VOLTS
R DS(on) = 0.025 OHM Motorola Preferred Device CASE 221A–06, Style 5 TO–220AB D S G
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2 Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (C pk ≥ 2.0) (3) (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) V(BR)DSS Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS 1.0 µAdc Gate–Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc) IGSS — — 100 nAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (C pk ≥ 3.0) (3) (VDS = VGS , ID = 250 µAdc) Threshold Temperature Coefficient (Negative) VGS(th) 1.0 1.5 4.0 2.0 Vdc mV/°C Static Drain–to–Source On–Resistance (C pk ≥ 3.0) (3) (VGS = 5.0 Vdc, ID = 25 Adc) R DS(on) — 0.020 0.025 Ohm Drain–to–Source On–Voltage (VGS = 10 Vdc) (ID = 50 Adc) (ID = 25 Adc, TJ = 125°C) VDS(on) 0.83 1.5 1.3 Vdc Forward Transconductance (VDS = 5.0 Vdc, ID = 25 Adc) gFS 15 20 — mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc VGS = 0 Vdc C iss — 3500 4900 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) C oss — 1550 2170 Transfer Capacitance f = 1.0 MHz) C rss — 550 770 SWITCHING CHARACTERISTICS (2) Turn–On Delay Time (V 15 Vd I 50 Ad td(on) — 22 30 ns Rise Time (VDD = 15 Vdc, ID = 50 Adc, VGS =50V d c tr — 340 466 Turn–Off Delay Time VGS = 5.0 Vdc, R G = 2.3 Ω ) td(off) — 90 117 Fall Time R G 2.3 Ω ) tf — 218 300 Gate Charge (S Fi 8) (V 24 Vd I 50 Ad Q T — 74 100 nC (See Figure 8) (VDS = 24 Vdc, ID = 50 Adc, Q 1 — 13.6 —( DS , D , VGS = 5.0 Vdc) Q 2 — 44.8 — Q 3 — 35 — SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (IS =50 Adc, VGS = 0 Vdc) (IS = 50 Adc, VGS = 0 Vdc, TJ = 125°C) VSD 2.39 1.84 3.0 Vdc Reverse Recovery Time (S Fi 15) (I 50 Ad V 0 Vd trr — 106 — ns (See Figure 15) (IS = 50 Adc, VGS = 0 Vdc, ta — 58 —(S , GS , dIS/dt = 100 A/µs) tb — 48 — Reverse Recovery Stored Charge Q RR — 0.246 — µC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of die) (Measured from the drain lead 0.25″ from package to center of die) LD 3.5 4.5 nH Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) LS — 7.5 — nH (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. (3) Reflects typical values. C pk = Max limit – Typ 3 x SIGMA
4 Motorola TMOS Power MOSFET Transistor Device Data
by recognizing that the power MOSFET is charge controlled. by current from the generator. and Q2 and VGSP are read from the gate charge curve. on–state when calculating td(off). voltage at the source which reduces the gate drive current. tion of drain current, the mathematical solution is complex. sure and, consequently, is not specified. Figure 7. Capacitance Variation
6 Motorola TMOS Power MOSFET Transistor Device Data
Figure 11. Reverse Recovery Time (trr) Figure 12. Maximum Rated Forward Biased Figure 13. Maximum Avalanche Energy versus
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8 Motorola TMOS Power MOSFET Transistor Device Data
CASE 221A–06 ISSUE Y NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 B Q H Z L V G N A K F 12 3 D SEATING PLANE–T– C ST U R J STYLE 5: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;JAPAN : Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Customer Focus Center: 1–800–521–6274 Motorola Fax Back System – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 – http://sps.motorola.com/mfax/ HOME PAGE : http://motorola.com/sps/ MTP50P03HDL/D◊