IRF430-433 FAIRCHILD | Alldatasheet
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. ee ~— FAIRCHILD SEMICONDUCTOR bye Bf s4es674 ooezas a T a IRF430-433/IRF830-833 FAIRCHILD MTM/MTP4N45/4N50 A Schlumberger Company N-Channel Power MOSFETs,
4.5 A, 450 V/500 V
: Power And Discrete Division Description TO-204AA TO-220AB These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed S) applications, such as off-line switching power supplies, y; UPS, AC and DC motor controls, relay and solenoid & drivers. Wy.
7 S) 4,
© Vos Rated at +20 V 04 © Silicon Gate for Fast Switching Speeds pot aoe e toss. Vps(ony SOA and Vasin) Specified at Elevated IRF430 tnreso jemperature IRF431 IRF631 © Rugged ‘ q IRF432 IRF832 IRF433 IRF833 MTM4N45 MTP4N45 MTM4N50 MTP4N50 Maximum Ratings \\ Rating Rating i IRF430/432 IRF431/433 : 1RF830/832 IRF831/833, Symbol MTM/MTPAN5O MTM/MTP4N45 Unit Voar | Drain to Gate Voltage v : Ros = 20 k2 Ty Terg | Operating Junction and =55 to +150 =55 to +150 *c Storage Temperature | Th Maximum Lead Temperature 275 275 °C for Soldering Purposes, 1/8" From Case for 5s Maximum On-State Characteristics 1RF430/431 1RF432/433 | MTM/MTP4N45 1RF830/831 IRF832/833 | MTM/MTP4N45 Rosjon) | Static Drain-to-Source 18 2 (On Resistance lo Drain Current A ‘ Continuous 40 40 ' Pulsed 16 10 i Maximum Thermal Characteristics : Rac | Thermal Resistance, 1.67 1.67 1.67 °C/W ' Junetion to Case Raia | Thermal Resistance, “c/w Junction to Ambient Pp Total Power Dissipation 75 75 75 Ww . at To = 25°C Notes For information concerning connection diagram and package outne, refer to Section 7. ——— 2-132 Foi fred — oo a bee
a Electrical Characteristics (Tc = 25°C unless otherwise noted) Off Characteristics Veamoss | Drain Source Breakdown Voltage’ | Ss | | SV Ves =0 V, Ip = 250 pA 1RF430/432/830/832 {60 | | IRF431/493/831/833 | 40 [| | B : loss Zero Gate Voltage Drain Current es ee eee Vos = Rated Voss, Ves = 0 V | HA | Vos=0.8x Rated Voss, Ves =0 V, To = 125°C less Gate-Body Leakage Current (ee es Vas = +20 V, Vos=0 V On Characteristics : Roston) | Static Drain-Source On-Resistance® a a Ves = 10 V, Ip=25 A
1 IRF430/431/830/831 [| 46 |
1RF432/433/832/833 [|e | Dynamic Characteristics | Switching Characteristics (To = 25°C, Figures 12, 19) a a Vos = 180 V Source-Drain Diode Characteristics Vso Diode Forward Voltage | | uw] v | IRF430/431/830/831 v Is =4.5 A; Veg=0 V IRF432/499/892/833 [| 18 | Vv [ts=40 A; Vos=0V tr Reverse Recovery Time 600 | |__ ns _| Ip= 45 A; dig/dt= 100 A/uS Wotes
4 Ty= 425°C to + 160°C
- Pulse tes: Pulso width <80 ye, Duy cyclo <1% | 2-133 ee ee?
CHILD SEMICONDUCTOR 64 DEP 34b9b74 O027921 Oo I . MTM/MTP4N45/4N50 T-39-11 | . ; | Electrical Characteristics (Tc = 25°C unless otherwise noted) . “Gmoar[ehwacerste [mn | or [vse | Tesiconttons | ] Off Characteristics Vieryoss | Drain Source Breakdown Voltage" a v Vas = 0 V, Ip=5.0 mA | Ipss | Zero Gate Voltage Drain Current mA | Vos = 0.85x Rated Voss, Ves =0 V Vps = 0.85 x Rated Voss, Ves =0 V, To= 100°C less Gate-Body Leakage Current [| #500 | ma | Vos= #20 V, Vos =0 V ; On Characteristics ae 5 Vesiny | Gate Threshold Voltage [20 | «5 [ vl | Ip =1.0 MA, Vos = Ves. : 15 v Ip =1.0 mA, Vos = Vas: : ‘ To = 100°C : Rosien) | Static Drain-Source On-Resistance® | | + | @ | Ves = 10 V, Ip=2.0 A : Voston | Drain-Source On-Voltage* Cr {so | vi | Ves = 10 V, Ip=2.0 V v Ves = 10 V, Ip= 4.0 A To = 100°C Os Forward Transconductance [2 | | s@ | Vos = 10 V, In=2.0 A Dynamic Characteristics Switching Characteristics (To = 26°C, Figures 12, 13)° tajen) _ | Turn-On Delay Time [| 0 |__| Von = 28 V, n= 2.0 A [Risetme Lee ican rat tine t00 | Q5 Total Gato Charge no | Ves=10 V, In=7.0 A Vp = 180 V Notes
1 Ty=+25C to + 150°C
2 Patse teat Pus width <00 ys, Duty oyle <1%
8: Switching tine measuremonts porformed on LEM TR-S® lost equipment | 2-134 _ 4 bs ER
. Typical Performance Curves Figures 4-6 for IRF 432/433/692/833 only. Figure 3. Transfer Characteristics Figure 4 Output Characteristics
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FAIRCHILD SEMIconpucTOR~~—~—~CO”:CSCE BETH COATAAK Ss IRF430-433/IRF830-833 ; MTM/MTP4N45/4N50 7-39-11 Typical Electrical Characteristics : Figure 12 Switching Test Circuit Figure 13 Switching Waveforms : ae, a ae | to ome | } ot <— “dab alah | Oo | - a fo = ! m jro% | 1 [pasewor-——-| ee H 2-137 i . . i - oe — a