IRF510-513 FAIRCHILD | Alldatasheet
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3469674 FAIRCHILD SEMICONDUCTOR ay DEW 3469674 0027934 3 | |
et pe Basu374_ 0027934 a IRF510-513 T-39-OF FAIRCHILD MTP4NO8/4N10 7 39-// ‘A Schlumberger Company N-Channel Power MOSFETs,
5.5 A, 60-100 V
| Power And Discrete Division ———$ Pairs And Discrete Division Description T0-220AB Those devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, : such as switching power supplies, converters, AC and DC y y, motor controls, relay and solenoid drivers and other pulse Sf | circuits, Wy © Low Rosjon) “ i © Vos Rated at +20 V ‘swore : © Silicon Gate for Fast Switching Speeds inFst0 : © loss, Vos(ony Specified at Elevated Temperature arent $ Rugged IRF512 © Low Drive Requirements nee © Ease of Paralleling ierpaNoe MTPAN10 Maximum Ratings . Rating | IRF510/512 Rating Rating Symbol MTP4N10 MTP4NO8 IRF511/513 Unit ' Vocr _| Drain to Gate Voltage! v : Ros = 20 k2 Ty, Tsig | Operating Junction and -55 to +150 -55 to +150 -55 to +150 °c | Storage Temperatures Th Maximum Lead Temperature 278 275 275 °C for Soldering Purposes, 4/8" From Case for § 8 : Maximum On-State Characteristics [sds 107511 IRF512/513 MTP4NO8/10 Rosier) | Static Drain-to-Source 0.60 0.80 0.80 a On Resistance t Ip Drain Current A f Continuous at To = 26°C 50 . Continuous at Tc = 100°C 36 . Pulsed 14 Maximum Thermal Characteristics : Rosco | Thermal Resistance, srw Junction to Case Roua | Thermal Resistance, sc/W Junction to Ambient | : Po Total Power Dissipation w at To= 25°C Notes For information concerning connection chagram and package outine, rele o Section 7. SR 2-147 Bvt
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; IRF510-513 739-09 MTP4N08/4N10 ~~. T39-U Electrical Characteristics (Tc = 25°C unless otherwise noted) Off Characteristics Vienyoss | Drain Source Breakdown Voltage! es ee Ves =0 V, Ip = 250 yA IRF510/512/MTP4N10 {100 | | loss Zoro Gate Voltage Drain Curent | __—'(|_—-250~«|| ~—s#A__| Vos=Rated Voss, Vos 0 V Ves =0 V, To = 125°C On Characteristics Vestn) | Gate Threshold Voltage en IRF510-513 [20 [ 40 | lp = 250 BA, Vos = Ves MTP4N08/10 [20 | 45 | lp=1 mA, Vos = Ves Roswen | Static Drain-Source On-Resistance” | | | Ves = 10 V, Ip=2.0 A IRF510/514 [ [oso | inFsi2/sa/mTPaNoB/aNio [| | 080 | . Vosior) | Drain-Source On-Voltage” | | se | v | Vas = 10 V; Ip=4.0 A ' MTP4NO8/4N10 ; of [| Vas = 10 V; Ip=2.0 A; To = 100°C Dynamic Characteristics Switching Characteristics (To = 25°C, Figures 11, 12)° Q, Total Gate Charge 75 ne | Veg= 10 V, Ip=8.0 A el 2-148 | en
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: ee Typical Performance Curves (Cont.) Figure 6 Gate to Source Voltage vs . Figure 5 Capacitance vs Drain to Source Voltage Total Gate Charge 10° er bad fSsriSee --[] VY EL < Voo= 40 ¥ » SS hn ree [7 ae eed SAU mL IW Ss aay 2 4 JES eaten 2 a, i esti eer PL ar | | Ce ith CLT oc ‘ . Figure 7 Forward Biased Safe Operating Area for Figure 8 Transient Thermal Resistance vs Time for fl MTP4N08/4N10 MTP4NO8/4N10 . 1 = ea faieetidite sd Santi FS
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Typical Electrical Characteristics . Figure 11 Switching Test Circult Figure 12 Switching Waveforms ‘= veo ton torr asf ad eiBharon Nour ourruny } - * re fewenreo ii { . i an | wn ide do et Shale awe i = . eo | +} wr Lim “\\ | | TT 1 a a 2-151 i te