MTM45N05E MOTOROLA | Alldatasheet

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. , MTM45N05E Designer's Data Sheet MTP45NO5E e = Power Field Effect Transistors : N-Channel Enhancement-Mode Silicon Gate Tos POWER FETs This advanced E” series of TMOS power MOSFETs is designed to withstand high DS(on) Vours OHM energy in the avalanche and commutation modes. These new energy efficient devices also offer drain-to-source diodes with fast recovery times. Designed for low voltage, ae high speed switching applications In power supplies, converters and PWM motor con- Se trols, these dovices are particularly well suited for bridge circults where diode speed and - ° oe commutating safe operating area are critical, and offer additional safety margin against 1) 3 unexpected voltage transients. <= @ Internal Source-to-Drain Diode Designed to Replace 7s External Zener Transient Suppressor — Absorbs High . Energy In the Avalanche Mode — Unclamped Inductive Switching (UIS) Energy Capability Specified . G at 100°C. *@ Commutating Safe Operating Area (CSOA) Specified for ; Use in Half and Full Bridge Circuits ™ @ Source-to-Drain Diode Recovery Time Comparable to a TMOS Discrete Fast Recovery Diode @ Diode is Characterized for Use in Bridge Circuits ; @ DC Equivalent to BUZ11 MAXIMUM RATINGS (T, = 26°C unless otherwise noted) a4 "Drai-Gate Voltage Rag -1M0) | Voor | 9 | Vo _ Gate-Source Voltage — Continuous Vos Ts | = case 137A.t2 — Non-repetitive [tp = SO us)} Vosm 10-204AE Drain Current— Continuous [Te = 26°C) — Pulsed “ooawtowwen eS | TO We 0 Derate above 25°C \\N THERMAL CHARACTERISTICS if Thermal Resistance Junction to Case Rec 1.0 Junction to Ambient MTM45N05E Raa 20 MITP4SNOSE MTP4SNOSE 62.5 CASE 2214-04 Maximum Lesd Temperature for Soldering TL 276 Purposes, 1/8" from case for § seconds Designer's Data for "Worst Case” Conditions — The Designer's Date Sheet permits the dosign of most circuits entirely from the information presonted. SOA Limit curves — representing boundaries om device characteristics — are given to facilitate “worst case” design. a ee ee MOTOROLA TMOS POWER MOSFET DATA 3-539

ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) pC Rtaractoristic ft Sxmbor | in| Max | Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage Visrioss ess oD Om Nonoss | eT Zero Gate Voltage Drain Current loss (Vos = Rated Voss, Vag = 0) (Vos = Rated Voss, Ves = 0, Ty = 126°C) Gate-Body Leakage Current, Forward (Vagr = 20 Vde, Vos ~ 0) | tasse | — | 100 | nado | Gate-Body Leakage Current, Reverse {Vasp ~ 20 Vdc, Vos ~ 0) | esse | — | 100 | hee ON CHARACTERISTICS* Gate Threshold Voltage {Vos = VGs- Ip = 250 uA) Ty = 100°C Static Drain-Source On-Resistance (Vag = 10 Vde, Ip = 29 Ade) | roston) | | 0035 | Ohm Drain-Source On-Voltage (Vgs = 10 V} . VbSion) 4 (lp = 45 Ade) {ip = 22.6 Ade, Ty = 100°C) Forward Transconductance (Vos = 18 1p = 294) es | 7 | — | mho DRAIN-TO-SOURCE AVALANCHE CHARACTERISTICS Unctamped Inductive Switching Energy Seo Figures 14 and 16 Wosr {ip = 145 A, Vpp = 26 V, Te = 25°C, Single Pulse, Non-repetitive) 50 {ip > 45 A, Vop = 25 V, Te = 26°C, P.W. < 45 ys, Duty Cycle < 1%) 110 {Ip = 18 A, Vop = 25 V, Te = 100°C, P.W. < 45 ps, Duty Cycle < 1%) 40 DYNAMIC CHARACTERISTICS Vos-2V.Veg-0, [LCs | — | 3000 f= 1 Mi Coss | — | 1600 See Figure 18 Tons | — | 0 SWITCHING CHARACTERISTICS® (Ty = 100°C) ee es PRieTime |S OD = 28. = 28 Ree Time 0p = 26¥.10 es ee Seo Figure 9 | tom =| — | 7 (Vog = 08 Rated Voss, Ce Ip = Rutedip.Vag=10V) | Oye | 300) | — SeoFigures i7and1@ Fogg | 25ltve) | — SOURCE DRAIN DIODE CHARACTERISTICS* lg = 4A [veo [tative 22 | ve Vas = 0 ton | __Uenited by atray inductonce INTERNAL PACKAGE INDUCTANCE (¥0-204) Internal Orain Inductance (Measured from the contact screw on the header closer to the source pin and the center of the die) Internal Source Inductance le (Measured from the source pin, 0.26" from the package to the source bond pad) INTERNAL PACKAGE INDUCTANCE (TO-220) Internal Drain Inductance (Measured from the contact screw on tab to center of die) 3.6 (Typ) (Measured from the drain lead 0.25" from peckage to center of die) 4.5 (Typ) internal Source inductance (Meesured from the source lead 0.25" from package to source bond pad.) a ae *Pulse Test: Puise Width = 300 ps, Duty Cycle = 2%. TP MOTOROLA TMOS POWER MOSFET DATA

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Figure 10. Thermal Response

only a second order effect on CSOA.

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Figure 13. Safe Area Figure 12. Commutating Safe Operating Area {CSOA) Veuty Figure 14. Unclamped Inductive Switching won = (i007) ( ac

Figure 18. Gate Charge Test Circuit

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