MTP3N60E MOTOROLA | Alldatasheet

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1Motorola TMOS Power MOSFET Transistor Device Data /C0068/C0101/C0115/C0105/C0103/C0110/C0101/C0114/C0039/C0115 /C0068/C0097/C0116/C0097 /C0083/C0104/C0101/C0101/C0116 /C0084/C0077/C0079/C0083 /C0069/C0045/C0070/C0069/C0084/C0046 /C0072/C0105/C0103/C0104 /C0069/C0110/C0101/C0114/C0103/C0121 /C0080/C0111/C0119/C0101/C0114 /C0070/C0069/C0084 N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

  • Avalanche Energy Capability Specified at Elevated Temperature
  • Low Stored Gate Charge for Efficient Switching
  • Internal Source–to–Drain Diode Designed to Replace External Zener Transient Suppressor — Absorbs High Energy in the Avalanche Mode
  • Source–to–Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–Source Voltage VDSS 600 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ ) VDGR 600 Vdc Gate–Source Voltage — Continuous Gate–Source Voltage — Non–repetitive VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Pulsed ID ID IDM 3.0 2.4 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 75 0.6 Watts W/°C Operating and Storage Temperature Range TJ, Tstg –55 to 150 °C UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C) Single Pulse Drain–to–Source Avalanche Energy — TJ = 25°C Single Pulse Drain–to–Source Avalanche Energy — T J = 100°C Repetitive Pulse Drain–to–Source Avalanche Energy W DSR(1) W DSR(2) 290 7.5 mJ THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case° Thermal Resistance — Junction to Ambient° R θJC R θJA 1.67 62.5 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C (1) VDD = 50 V, ID = 3.0 A (2) Pulse Width and frequency is limited by TJ(max) and thermal response Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Order this document by MTP3N60E/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA /C0077/C0084/C0080/C0051/C0078/C0054/C0048/C0069 TMOS POWER FET

3.0 AMPERES

600 VOLTS

R DS(on) = 2.2 OHMS D S G CASE 221A–09, Style 5 TO-220AB Motorola Preferred Device  Motorola, Inc. 1997

/C0077/C0084/C0080/C0051/C0078/C0054/C0048/C0069

2 Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0, ID = 250 µAdc) V(BR)DSS 600 — — Vdc Zero Gate Voltage Drain Current (VDS = 600 V, VGS = 0) (VDS = 480 V, VGS = 0, TJ = 125°C) IDSS 100 µAdc Gate–Body Leakage Current — Forward (VGSF = 20 Vdc, VDS = 0) IGSSF — — 100 nAdc Gate–Body Leakage Current — Reverse (VGSR = 20 Vdc, VDS = 0) IGSSR — — 100 nAdc ON CHARACTERISTICS* Gate Threshold Voltage (VDS = VGS , ID = 250 µAdc) (TJ = 125°C) VGS(th) 2.0 1.5 4.0 3.5 Vdc Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 1.5 A) R DS(on) — 2.1 2.2 Ohms Drain–to–Source On–Voltage (VGS = 10 Vdc) (ID = 3.0 A) (ID = 1.5 A, TJ = 100°C) VDS(on) 9.0 7.5 Vdc Forward Transconductance (VDS = 15 Vdc, ID = 1.5 A) gFS 1.5 — — mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 V V 0 C iss — 770 — pF Output Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) C oss — 105 — Transfer Capacitance f = 1.0 MHz) C rss — 19 — SWITCHING CHARACTERISTICS* Turn–On Delay Time (V 300 V I 3 0 A td(on) — 23 — ns Rise Time (VDD = 300 V, ID ≈ 3.0 A, R L = 100Ω R G =1 2Ω tr — 34 — Turn–Off Delay Time R L = 100 Ω , R G = 12 Ω , VGS(on) = 10 V) td(off) — 58 — Fall Time GS(on) ) tf — 35 — Total Gate Charge (V 420 V I 3 0 A Q g — 28 31 nC Gate–Source Charge (VDS = 420 V, ID = 3.0 A, VGS = 10 V) Q gs — 5.0 — Gate–Drain Charge VGS = 10 V) Q gd — 17 — SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (I 3 0 A di/d 100 A/ ) VSD — — 1.4 Vdc Forward Turn–On Time (IS = 3.0 A, di/dt = 100 A/µs) ton — ** — ns Reverse Recovery Time trr — 400 — INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the contact screw on tab to center of die) (Measured from the drain lead 0.25″ from package to center of die) Ld 3.5 4.5 nH Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) Ls — 7.5 — * Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%. ** Limited by circuit inductance.

4 Motorola TMOS Power MOSFET Transistor Device Data

Figure 7. Maximum Rated Forward Biased Figure 8. Maximum Rated Switching when it is forward biased, or when it is on, or being turned on. and Its Use” provides detailed instructions. Figure 9. Resistive Switching Time Figure 10. Thermal Response

Figure 12. Commutating Safe Operating Area (CSOA) Figure 13. Commutating Safe Operating Area Figure 14. Unclamped Inductive Switching Figure 15. Unclamped Inductive Switching

2 LI O 2/C0467/C0466

The time interval tfrr is the speed of the commutation cycle. diode goes from conduction to reverse blocking. CSOA stress is maximized as IS decays from IRM to zero. a second order effect on CSOA. Figure 11. Commutating Waveforms

0.25 IRM

6 Motorola TMOS Power MOSFET Transistor Device Data

Figure 16. Capacitance Variation Figure 17. Gate Charge versus Figure 18. Gate Charge Test Circuit

10 V 100 k

/C0077/C0084/C0080/C0051/C0078/C0054/C0048/C0069 7Motorola TMOS Power MOSFET Transistor Device Data PACKAGE DIMENSIONS CASE 221A–09 ISSUE Z STYLE 5: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 Q H Z L V G N A K 12 3 D SEATING PLANE–T– C ST U R J

/C0077/C0084/C0080/C0051/C0078/C0054/C0048/C0069

8 Motorola TMOS Power MOSFET Transistor Device Data

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;JAPAN : Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Customer Focus Center: 1–800–521–6274 Motorola Fax Back System – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 – http://sps.motorola.com/mfax/ HOME PAGE : http://motorola.com/sps/ MTP3N60E/D◊