IRF320-323 FAIRCHILD | Alldatasheet

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: FAIRCHILD SEMICONDUCTOR == HE 349574 ooazagy o Ef : inne ae eee nnnnenel nnn Ss IRF320-323/IRF720-723 A Schlumberger Company N-Channel Power MOSFETs,

3.0 A, 350-400 V '

. Power And Discrete Division Z . Description ‘TO-204AA TO-220AB | These devices are n-channel, enhancement mode, power . MOSFETs designed especially for high speed applications, iS) ‘such as switching power supplies, converters, AC and DC H, motor controls, relay and solenoid drivers and other pulse & circuits. Vy. | © Low Ros(on) e"% © Vos Rated at +20 V een soon a { © Silicon Gate for Fast Switching Speeds IRF320 IRF720 — © Ins, Vosion» Specified at Elevated Temperature ineaot iaevat @ Rugged © Low Drive Requirements Hives \\aevea © Ease of Paralleling NTPSNaS MTP3N40 | Product Summary Ip at Ip at . Part Number Ros (on) Te = 25°C Tc = 100°C Case Style ia wrrawo | amv | aan [soa | 200 | : Nites i For information concerning connection diagram and package outline, reterto i ee 2-107

: ' FAIRCHILD SEMICONDUCTOR a4 de ff ssesn74 ooz7aas 2 Bt | IRF320-323/IRF720-723 - | : MTP3N35/3N40, <=s0_,,. 7 F3I-I i Maximum Ratings Rating Rating IRF320/322 IRF321/323 | IRF720/722 1RF721/723 symbol Characteristic MTPaN4O MTP3NG5 unit Vper Drain to Gate Voltage* Vv Rags = 20 k Ts, Taig | Operating Junction and 785 to +150 55 to +150 °C Storage Temperatures TL Maximum Lead Temperature 275 275 °C for Soldering Purposes, 4/8" From Case for 5 8 Maximum Thermal Characteristics 1RF320-323/ : IRF720-723 MTP3N35/3N40 i Rayo | Thermal Resistance, 1.67 *c/w ; Junction to Case Fiaya___| Thermal Resistance, 30/80 s/w Junction to Ambient Po Total Power Dissipation 40 75 w at To = 25°C Electrical Characteristics (Tc = 25°C unless otherwise noted) Off Characteristics Vierioss | Drain Source Breakdown Voltage’ | v Vas = 0 V, Ip = 250 pA IRF320/322/720/722/ MTP3N4O IRF921/320/721/723/ MTP3N35 Ibs Zero Gate Voltage Drain Current (| 250 | wa | Vos = Rated Voss, Vas = 0 V uA | Vos =0.8x Rated Voss. Vas =0 V, To = 125°C Tess | Gate-Body Leakage Current nA | Veg=#20 V, Vos=0 V 1RF320-323 £100 IRF 720-723/MTP3N35/3N40 +500 2-108 i a : EW a ea

ee | . FAIRCHILD SEMICONDUCTOR au de Bsueae7y ooazacn y Bf | ES on IRF320-323/IRF720-723 : MTP3N35/3N40 : : 7-39-11 : : eee Electrical Characteristics (Cont.) (Tc = 25°C unless otherwise noted) | symbot | __charactertio in| max | unt | test conattions On Characteristics Vast | Gate Threshold Voltage fT | |v IRF320-323/IRF720-723 | 20 | 40 | Ip = 250 uA, Vos = Ves wTeaNg6/40 [20 | 46 _| Ip=1 mA, Vos Vas 2 Rosier) | Static Drain-Source On-fesistance? | | |S Vas =10 V, Ip=15A . 1RF920/321/720/721 ee \\RF322/328/722/723 ee . Vpsjon) | Drain-Source On-Voltage” : MTP3N35/40 V__| Vas=10 V; Ip=3.0 A; : ° v Ves = 10 V; Ip=1.5 A; : To= 100°C . Dynamic Characteristics ! Switching Characteristics (Tc = 200°C, Figures 1, 2)° : aes g oO Qy Total Gate Charge nC | Vas=10 V, p= 40 A Vop = 200 V Symbol Characteristic [typ | Max | unt | Test Conditions Source-Drain Diode Characteristics Veo | Diode Forward Voltage IRF320/321/720/721 V__| ls=3.0 A; Vag=0 V 1RF922/328/722/723 [| ts | V [tg=25 Ai Vos=0 V te Reverse Recovery Time 1p=3.0 A; dig/dt = 100 A/uS Notes 4. Ty= 425°C to +150°C 2. Putco test: Pulse width <80 ys, Duty cyte < 1% : 2. Suilchng time measuremonte performed on LEM TR-S8 tes! equipment. . ed : 2-109 . ie

“FAIRCHILD SEnTConDUCTOR —SS*=iS BUEEY OOZTAN7 LM | : IRF320-323/IRF720-723 MTP3N35/3N400 i Typical Electrical Characteristics ‘ | Figure 1 Switching Test Circuit Figure 2 Switching Waveforms: Sitio vor eurnyon } = = i 1 oun “ne an & to Se md ale | I al | Typical Performance Curves : Figure 4 Static Drain to Source Resistance | ; Figure 3 Output Characteristics vs Drain Current | | 5 ‘ : | | | | BoA eT 1) = | 4 PU ee] | oe | AA Bett Rieger b= ! | ,—— FA i ee, | pA MEEre — JASE Litt tty Le OT oman cunnent-n _ Figure 6 Temperature Variation of Gate to Figure 5 Transfer Characteristics Source Threshold Voltage i ETT yy OT i aac ee a LL SSEE TTT TY i ee CPEPSSEE LEIA TT i “CATT TTS LiEA7A TTT COT TT © -axrarosounceveurseey “e umen0N TEINS i 2-110 cd

See i | 4 on27a98 a ff. : FAIRCHILD SEMICONDUCTOR 84 DEB Subb?74 O I a i ; IRF320-323/IRF720-723 MTP3N35/3N40 1-39-11 1 Typical Performance Curves (Cont.) Figure 8 Gate to Source Voltage vs u i Figure 7 Capacitance vs Drain to Source Voltage Total Gate Charge i [== ™ V i Sect imeeeiil wf TTT] se | 4 Voo=200 V V7 PST e| Ee 17 1 | 2 web Pail [Tl M17 Foe a fi__| FEA 4 7 SSI DAS /ARRRee von ose ota ‘Toran cutae-ae Figure 9 Forward Biased Safe Operating Area Figure 10 Transient Thermal Resistance vs Time for IRF320-323 and IRF720-723 for IRF320-323 and IRF720-723 : 10 ery 10 ee SSS EHS Ha He "Fees ae ll ‘ECHE FHI tt ee oni] Toon 1 clskzenzee TT i, ICTs LOSS i HS =) OF “aaa aR Sen RN 1 oe Hl : eae Seal saaliilih ims || | TTT eS NTS Yen = Pa t=O SHE ef HILT ari cll vot Yabo vote me Figure 11 Forward Biased Safe Operating Area Figure 12 Transient Thermal Resistance vs Time for MTP3N35/3N40 for MTP3N35/3N40 © Eorbroy reer Seria sas Fs festa camer meron Cee

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