MTP30N08M MOTOROLA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
MOTOROLA SC (XSTRS/R F) baE D MM 6367254 0098784 89) MINOT MOTOROLA =a SEMICONDUCTOR Sx TECHNICAL DATA Power Field Effect Transistor MTP30NO8M N-Channel Enhancement-Mode Silicon Gate with Current Sensing Capability TMOS SENSEFET DEVICE This TMOS Power FET with current sensing capability is designed for all power 30 AMPERES control applications where it is desirable to sense current such as in power sup- Rps{on) = 0.065 OHM plies and motor controls. This device allows current sensing with a minimum of 80 VOLTS power loss. © “Lossless” Current Sensing for Maximum Efficiency — Sense Current is Reduced by a Factor of 900 © Ideal for Short Circuit/Overload Protection DRAIN © Simplifies Many Circuits When Used With Current Mode Integrated Circuits Such as the MC34129 | © Kelvin Source Contact to Maximize Accuracy © Rugged — SOA is Power Dissipation Limited ® Low Rps(on) — 0.065 Ohms Maximum | ® TMOS GATE NOTES: 7 °
1 Handling precautions to protect against electrostatic MIRROR
discharge 18 mandatory. keLMN 2. Do not use the mirror FET independent of the power FET 3. itis recommended that the mirror terminal (M) be shorted to the Kelvin Terminal (K) when current sensing is not ‘SOURCE required MAXIMUM RATINGS (Tc = 25°C unless otherwise noted ) [ BainioSaurcavoteoe——SSSC*dCss P| ee | Drain-to-Gate Voltage VpcR 80 Vde a (Res = 1 M2) | — Non-Repetitive (tp = 50 ys) =40 | 3148-03 a Gate-to-Mirror Voltage — Continuous Vom 20 Vde — Non-Repetitive (tp < 50 us) +40 i Drain Current — Continuous 30 | Amps — Pulsed 90 Sense Current — Continuous mA — Pulsed , Total Power Dissipation @ Tc = 25°C Watts Derate above 25°C wre [Goering an Storge Temperowre Ronee | Tu Tag | Swe | c_| THERMAL CHARACTERISTICS Thermal Resistance, “Cw Junetion-to-Case Rasc 1 Junction-to-Ambient RA 62.5 Maximum Lead Temperature for Soldering Purposes, TL oe 1/8" from case for 5 seconds MOTOROLA TMOS POWER MOSFET DATA 3-390
MOTOROLA SC (XSTRS/R F) 6BE D MM 6367254 0098785 728 MMOTL MTP30N08M ELECTRICAL CHARACTERISTICS (Tc = 25°C, Vix = 0 unless otherwise noted.) [thames | symbot_|_min [tw [er] oa] OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage VigR)DSS Vde (gg = 0, Ip = 0.25 mA} Zero Gate Voltage Drain Current Adc (Vps = 80 V, Veg = 0} (Vp = 80 V, Vgs = 0, Ty = 125°C) Gate-Body Leakage Current — Forward IGssF (gsr = 20 Vdc, Vps = 0) Gate-Body Leakage Current — Reverse (Vgsr = 20 Vdc, Vpg = 0 ON CHARACTERISTICS* Gate Threshold Voltage Vesith) (Vps = Ves. Ip = 1 mAde) (Ty = 125°C) Static Drain-to-Source On-Resistance 0.065 (gg = 10 Vdc, Ip = 15 Adc) Drain-to-Source On-Voltage (Vgg = 10 Vdc) Vpston) Vde (ip = 30 A) Forward Transconductance (Vps = 15 Vde, Ip = 15 Adc) CURRENT SENSING CHARACTERISTICS Current Mirror Ratio (Cell Ratio} (RseNSE = 0, 'p = 154, Veg = 10V) Mirror Compliance Ratio 0.65 (Weg = 10 Vdc, Ip = 15 Adc) Source Active Resistance (VGs = 10 Vde, Ip = 15 Adc, Rg = 10 megohm) Mirror Active Resistance (Vgs = 10 Vde, Ip = 15 Adc) DYNAMIC CHARACTERISTICS ee es wos TB imes° [Coss | SWITCHING CHARACTERISTICS* [er [= Fall Time p = [ s [0 | [=e [se | Gstesource charge | MS YN RY OA [Os | Gote-Souree Charge Ves = 10V x [| - [| e [| = | a ‘SOURCE-DRAIN DIODE CHARACTERISTICS* Forward On-Voltage veo [ = [16 [2 7 va] Reverse Recovery Time [we [= [a T= “Indicates Pulse Test Pulse Width = 300 us max, Duty Cycle = 2%. a MOTOROLA TMOS POWER MOSFET DATA 3-391
Figure 7. Thermal Response
5 De eee en ei a
28 Ct eerie ae - |
001 TT TP PT TP TP TP TT
Figure 8. Maximum Rated Forward Biased Figure 9. Maximum Rated Switching Safe
0 SS ae i rn a —T
5 Ea SS aa
resistance, contact resistance, and external wiring from overload stress. © Noise Suppression: Switching noise is also a first order defined only in the forward-mode operation. cally important to include double pulse suppression in in some applications. Figure 21. SENSEFET Device with Noise Suppression