MTP3055VL FAIRCHILD | Alldatasheet

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Technical content

Features

  • 12 A, 60 V. R DS(ON) = 0.18 Ω @ VGS = 5 V
  • Critical DC electrical parameters specified at elevated temperature.
  • Low drive requirements allowing operation directly from logic drivers. Vgs(th) < 2 V.
  • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
  • 175°C maximum junction temperature rating.  1999 Fairchild Semiconductor Corporation Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±15 V ID Drain Current - Continuous 12 A - Pulsed 42 Power Dissipation @ TC = 25°C4 8 WPD Derate above 25°C0 . 3 2 W / °C TJ, TSTG Operating and Storage Junction Temperature Range -65 to +175 °C Thermal Characteristics Rθ JC Thermal Resistance, Junction-to- Case 3.13 °C/W Rθ JA Thermal Resistance, Junction-to- Ambient (Note 1) 62.5 °C/W Package Outlines and Ordering Information Device Marking Device Package Information Quantity MTP3055VL MTP3055VL Rails/Tubes 45 units * Die and manufacturing source subject to change without prior notification. S G D TO-220 S D G

MTP3055VL Rev. A1 Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note 2) wDSS Single Pulse Drain-Source Avalanche Energy VDD = 25 V, I D = 12 A 72 mJ IAR Maximum Drain-Source Avalanche Current 12 A Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, I D = 250 µA 60 V ∆ BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25 °C 55 mV/°C IDSS Zero Gate Voltage Drain Current V DS = 60 V, V GS = 0 V 10 µA VDS = 60 V, V GS = 0 V, T J = 150°C 100 IGSSF Gate-Body Leakage Current, Forward VGS = 15 V, V DS = 0 V 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -15 V, V DS = 0 V -100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = V GS, ID = 250 µA 11 . 62 V ∆ VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25 °C -4 mV/°C RDS(on) Static Drain-Source On-Resistance VGS = 5 V,I D = 6 A, 0.100 0.180 Ω VDS(on) Drain-Source On-Voltage On-Resistance VGS = 5 V,I D = 12 A 2.6 V gFS Forward Transconductance V DS = 8 V, I D = 6 A 5 8.7 S Dynamic Characteristics Ciss Input Capacitance 345 570 pF Coss Output Capacitance 110 160 pF Crss Reverse Transfer Capacitance VDS = 25 V, V GS = 0 V, f = 1.0 MHz 30 40 pF Switching Characteristics (Note 2) td(on) Turn-On Delay Time 20 ns tr Turn-On Rise Time 190 ns td(off) Turn-Off Delay Time 30 ns tf Turn-Off Fall Time VDD = 30 V, I D = 12 A, VGS = 5 V, R GEN = 9.1 Ω 90 ns Qg Total Gate Charge 7.8 10 nC Qgs Gate-Source Charge 1.7 nC Qgd Gate-Drain Charge VDS = 48 V, ID = 12 A, V GS = 5 V 3.2 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current (Note 2) 12 A ISM Maximum Pulsed Drain-Source Diode Forward Current (Note 2) 42 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = 12 A (Note 2) 1.3 V trr Drain-Source Reverse Recovery Time IF =12 A, di/dt = 100A/ µs 55 nS Notes: 1. RθJA is the sum of the juntion-to-case and case-to-ambient thermal resistance. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ FAST FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I 2C™ i-Lo™ ImpliedDisconnect™ Rev. I11 ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT ™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Power247™ PowerSaver™ PowerTrench QFET  QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ Across the board. Around the world.™ The Power Franchise Programmable Active Droop™