IRF420-423 FAIRCHILD | Alldatasheet

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a FAIRCHILD SEMICONDUCTOR a4 pe suesezy ooazaas 2 hi aD el IRF420-423/IRF820-823 1-37-7 _ EXReaCe MTP2N45/2N50 A Schlumberger Company N-Channel Power MOSFETs, : 3.0 A, 450 V/500 V i Power And Discrete Division Description TO-204AA T0-220AB These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC y, motor controls, relay and solenoid drivers and other pulse . circuits. Wy ¢ Low Rosjon) J E © Vag Rated at +20 V sooner ‘some 2

1 Silicon Gate for Fast Switching Speeds

‘ © pss) Vosion» Specified at Elevated Temperature nesey eeeet © Rugged © Low Drive Requirements mesg \\arees © Ease of Paralleling bce MTP2NSO Product Summary Ip at Ip at Part Number To= 25°C To = 100°C Case Style Notes For intozntion conceming connection diagram and package outing rtero Section 7. t H EEE | 2427 ae E 2

=a sEmpconpuUcTOR.s—t—~S ay De Bj ayesezy r FAIRCHILD SEMICONDUCTOR aoe7a4s 4 LS IRF420-423/IRF820-823 ‘ MTP2N45/2N50 T-39-11 ' ee SeeeeSeeFeFeFSFSFSeSFSFeFeS Maximum Ratings Rating Rating 1RF420/422 1RF421/423 IRF820/822 IRF621/823 Symbol MTP2N5O MTP2N45 Unit Vocr Drain to Gate Voltage’ Vv Ras = 20 k2 Ts. Tstg | Operating Junction and -55 to +150 -55 to +150 °c Storage Temperatures T Maximum Lead Temperature 278 278 °C for Soldering Purposes, : 1/8" From Case for § § : Maximum Thermal Characteristics { 1RF420-423/ i IRF820-823 MTP2N45/2N50 Rasc | Thermal Resistance, 1.67 “c/w Junetion to Case Raa | Thermal Resistance, 30/80 sow Junetion to Ambient Po Total Power Dissipation 75 w | at To = 25°C Electrical Characteristics (Tc = 25°C unless otherwise noted) symbot | ___characteriste | in| ox | unt _| Test Conditions Off Characteristics Veerjoss | Drain Source Breakdown Voltage’ | S| SV Ves =0 V, Ip = 250 yA . 1RF420/422/820/822/ MTP2N5O ' IRF421/423/821/823/ MTP2N45 loss Zero Gate Voltage Drain Curent | | _—-250_~| uA __| Vos = Rated Voss, Vas=0 V uA Vos = 0.8 x Rated Vpgs, Vos =0 V, To = 125°C less Gate-Body Leakage Current a Ves = +20 V, Vos =0 V | IRF820-823/MTP2N45/50 [| #500 | Se 2-128 : 4 xr Bee}

FAIRCHILD SEMICONDUCTOR a4 DE | 3469674 OO2791b & C IRF420-423/IRF820-823 . MTP2N45/2N50 J-39-11 Electrical Characteristics (Cont) (Tc = 25°C unless otherwise noted) On Characteristics Vesity | Gate Threshold Voltage | 2 | ao | Vv | 1RF420-423/1RF820-823 Ip = 250 HA, Vos = Vas MTP2N45/MTP2N50 [20 | 45 | Ip= 1.0 mA, Vos = Ves Rosier) | Static Drain-Source On-Resistance ; | | @ Ves= 10 V, In= 1.0 A — 1RF420/421/820/821 a 1RF422/428/822/823 ee MTP2N45/50 a Vpsion) | Drain-Source On-Voltage a : MTP2N45/50 rf f| om | v Ves = 10 V; Ip =2.0 A i [ft v Ves = 10 V; Ip =1.0 A i T= 100°C : Dynamic Characteristics { Switching Characteristics (Tc = 25°C, Figures 1, ay «| Fatme | Ts Q, Total Gate Charge 15 nc Ves = 10 V, Ip=3.0 A Source-Drain Diode Characteristics Vso Diode Forward Voltage [| “|v | Ig= 2.5 A; Vos =0 V Hotes {Tye 425°C to +150°C 2. Pulse width fmited by Ts 2, Smlching tne measurements porformed on LEM TR-S8 tost oqupment. eS | 2-129 t Aas

FAIRCHILD SEMICONDUCTOR ay DE | 3469674 0027918 O i . IRF420-423/1RF820-823 . MTP2N45/2N50 T-39-11 SSS Typical Performance Curves (Cont.) Figure 6 Gate to Source Voltage vs . Figure 7 Capacitance vs Drain to Source Voltage Total Gate Charge Sa i om 2 Norme¥ WA § EPS err a, jo ee : Bann peer ee eeeil| 444 SHE rt Vitti] wl Oi ° Figure 9 Forward Biased Safe Operating Area Figure 10 Transient Thermal Resistance vs Time for IRF420-423 and IRF820-823 for IRF420-423 and IRF820-823 == aaa “Sy PACS Sea 7. FRIESE Sapa al SIE: a il 3 “Poreearcu Tm tee PST BS lola | " | |, PLMITED By SS 25 Fe ae HS HH 4 eee SUT i pega JUL SSSR 741 da A FEHR oma A a ownanoe fh Pe wel HIE AIL ate rll Figure 11 Forward Blased Safe Operating Area Figure 12 Transient Thermal Resistance vs Time for MTP2N45/2N50 for MTP2N45/2N50 Ate HERIEEHIGHIEESH

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