IRF710-713 FAIRCHILD | Alldatasheet
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3469674 FAIRCHILD SEMICONDUCTOR 84 a |
a IRF710-713 F_3a ~54- 09% a MTP2N35/2N40_| ‘A Schlumberger Company N-Channel Power MOSFETs,
2.25 A, 350-400 V
Power And Discrete Division Description T0-2200B These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AG and DC y, motor controls, relay and solenoid driver and high energy <> pulse circuits. tp # Low Rosion) d = © Vas Rated at +20 V seer 2 @ Silicon Gate for Fast Switching Speeds iRF710 : ® Ipss, Vosion) Specified at Elevated Temperature IRE711 © Rugged Reva © Low Drive Requirements ert © Ease of Paralleling Rreans Maximum Ratings MTP2N40 Rating Rating IRF710/712 IRF711/713 Symbol MTP2N40 MTP2N35 Unit Vosr Drain to Gate Voltage’ Vv Ags = 20 k2 Ty, Tetg | Operating Junction and =55 to +150 765 to +150 °C Storage Temperatures TT Maximum Lead Temperature 275 275 °C for Soldering Purposes, 1/8" From Case for 5’ Maximum On-State Characteristics Rosion | Static Drain-to-Source 2 On Resistance lo Drain Current A Continuous at To = 25°C 14 13 Continuous at To = 100°C: 09 8 Pulsed 5.0 5.0 Maximum Thermal Characteristics Rac Thermal Resistance, °C/W Junction to Case Raa | Thermal Resistance, “c/w Junction to Ambient Pp Total Power Dissipation w at To = 25°C Notes For information conceming connection diagram and package outing reter Section 7 A 2-157 aoe a Fe:
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MTP2N35/2N40 “J - 3%-04 eS \\ Electrical Characteristics (To = 25°C unless otherwise noted) . Off Characteristics Veenjoss | Drain Source Breakdown Voltage’ [| dS Ves =0 V, Ip = 250 pA IRF710/712/MTP2N40 | 40 | ‘it IRF711/719/MTP2N3S [30 | | uA Vos = 0.8 x Rated Voss, On Characteristics Vesqn | Gate Threshold Voltage | [| fs ee bet na wee MTP2N35/2N40 [20 | 46 | Ip=1 mA, Vos = Ves Ros(on) | Static Drain-Source On-Resistanco? || STS Vas = 10 V, Ip=0.8 A IRF710/711 re] * | IRF712/713/MTP2NG5/40 [50 | MTP2N35/2N40 v Ves = 10 V, Ip = 1.0 A, Ge | Forward transconductance [8 | TS | Vos=0V, p08 A Dynamic Characteristics Guz | Rove Tensor Cpssianes [|e | oF Switching Characteristics (To = 25°C, Figures 11, 12)° ios “wan | Tart One Te | Pt) a Q5 Total Gate Charge 75 nG | Veg=10 V, Ip=20A ee 2-168 - 4 aan - a Fata
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; MTP2N35/2N40J- 34-04 ; a : Electrical Characteristics (Cont.) (Tc = 25°C unless otherwise noted) Symbot | ___ Characteristic [typ | max [unit | Test Conditions . Source-Drain Diode Characteristics Vso Diode Forward Voltage ee ee | IRF710/711 [ [6 | OV (| s=1.5 A; Vos=0V IRF712/713 [Tt [Vv [5-19 A; Vos=0V tr | Reverse Recovery Time | 980 | |e | Ign 18 Ai dig/at=25 A/HS The +2596 w + 150°C 1 loc eos ras <0 ps, uty orto 14
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Typical Performance Curves . Figure 2 Static Drain to Source Resistance ‘ Figure 1 Output Characteristics vs Drain Current || A Le i || Ae wt ttt HAR Doe] | Sf oH amr PCCoC IAL | TEE Ty | Figure 4 Temperature Variation of Gate to Figure 3 Transfer Characteristics Source Threshold Voltage m4 aie sa Lp eA] eT es oot HN ESS] ‘a y BUONO PETTY PHN Py PEC | os] ff IS TAL ARRRRRREERE | DATTA CCE | * ease 10 source verrncey “* -amcnon Toes 2-159 i
. 3469674 FAIRCHILD SEMICONDUCTOR 84 DE 3449674 Oo27947 LE T IRF710-713 3 . mTP2N35/2N40 /~- 39.04 SSeS Typical Performance Curves (Cont.) Figure 6 Gate to Source Voltage vs - . Figure § Capacitance vs Drain to Source Voltage Total Gate Charge 4 es a Von 2000
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§ epi 5 j § ofa UT e va4nnn | 01 a | Vili lt wL_] 13 | venoms ro somc vores anton ene cnet Figure 7 Forward Biased Safe Operating Area Figure 8 Transient Thermal Resistance vs Time for MTP2N35/2N40 . for MTP2N35/2N40 i pa Za pet JARRE ' , EATS it 7, eee : NTR SEH bz ‘oh Lem £ ol ZONNIN Tl fea, at |
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| 3 fomeaaronivraish St ENE ig jusg@ertisi=.a 4 | 2 fear NOS Veet | ee Till Nt (ZGRETHICT somes | aL Teedieee UAE we UI UIT Leer | or 102 109 a a ee Figure 9 Forward Biased Safe Operating Area Figure 10 Transient Thermal Resistance for IRF710-713 for IRF710-713 aere eae d semIeS= eons g ancaisuumiTeo | {NS & Coe | Hace HEH ith BA esses 7 oun TTI Talal soca TICE TI Tee 2 t,t m2 200 ———— SSSSSeSeSeSeSeseseSsSssesesese 2-160 ie bed
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___ 3469874 FATRCHI 4 . IRF710-713 Me%b?4 goz?q4a g r | MTP2N35/2N40T- 39.04 ; ee Typical Electrical Characteristics . Figure 11 Switching Test Circuit Figure 12 Switching Waveforms veo — r 6% Btharon vor = “ #5 ae, Bb sue" ] J i) [ s i na | owt vee | fe. | és al _ pick [lat 1 | O | “ wen [fom = , 1 Te nsewwors | | 2-161 a fe