MTP29N15E MOTOROLA | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

1Motorola TMOS Power MOSFET Transistor Device Data /C0080/C0114/C0111/C0100/C0117/C0099/C0116 /C0080/C0114/C0101/C0118/C0105/C0101/C0119 /C0084/C0077/C0079/C0083 /C0069/C0045/C0070/C0069/C0084/C0046 /C0080/C0111/C0119/C0101/C0114 /C0070/C0105/C0101/C0108/C0100 /C0069/C0102/C0102/C0101/C0099/C0116 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114 N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

  • Avalanche Energy Specified
  • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
  • Diode is Characterized for Use in Bridge Circuits
  • IDSS and VDS(on) Specified at Elevated Temperature MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–to–Source Voltage VDSS 150 Vdc Drain–to–Gate Voltage (RGS = 1.0 MΩ ) VDGR 150 Vdc Gate–to–Source Voltage — Continuous Gate–to–Source Voltage — Non–Repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) ID ID IDM 102 Adc Apk Total Power Dissipation Derate above 25°C PD 125 1.0 Watts W/°C Operating and Storage Temperature Range TJ, Tstg –55 to 150 °C Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 29 Apk, L = 1.0 mH, RG = 25 /C0087) EAS 421 mJ Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient R θJC R θJA 1.0 62.5 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Order this document by MTP29N15E/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA /C0077/C0084/C0080/C0050/C0057/C0078/C0049/C0053/C0069 TMOS POWER FET

29 AMPERES

150 VOLTS

R DS(on) = 0.07 OHM D S G N–Channel CASE 221A–06, TO–220AB  Motorola, Inc. 1997

/C0077/C0084/C0080/C0050/C0057/C0078/C0049/C0053/C0069

2 Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) V(BR)DSS 150 TBD Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 150 Vdc, VGS = 0 Vdc) (VDS = 150 Vdc, VGS = 0 Vdc, TJ =125°C) IDSS 100 µAdc Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS — — 100 nAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS , ID = 250 µAdc) Threshold Temperature Coefficient (Negative) VGS(th) 2.0 2.7 TBD 4.0 Vdc mV/°C Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 14.5 Adc) R DS(on) — 0.055 0.07 Ohms Drain–to–Source On–Voltage (VGS = 10 Vdc, ID = 29 Adc) (VGS = 10 Vdc, ID = 14.5 Adc, TJ = 125°C) VDS(on) 2.4 2.1 Vdc Forward Transconductance (VDS = 8.6 Vdc, ID = 14.5 Adc) gFS 10 18 — mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 Vdc V 0 Vdc C iss — 2250 3150 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) C oss — 455 910 Transfer Capacitance f = 1.0 MHz) C rss — 133 190 SWITCHING CHARACTERISTICS (2) Turn–On Delay Time (V 75 Vd I 29 Ad td(on) — 17.5 40 ns Rise Time (VDD = 75 Vdc, ID = 29 Adc, VGS =1 0V d c tr — 108 220 Turn–Off Delay Time VGS = 10 Vdc, R G = 9.1 Ω ) td(off) — 90 180 Fall Time G ) tf — 85 170 Gate Charge (V 120 Vd I 29 Ad Q T — 78 110 nC (VDS = 120 Vdc, ID = 29 Adc, Q 1 — 12 —( DS , D , VGS = 10 Vdc) Q 2 — 37 — Q 3 — 23 — SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (IS = 29 Adc, VGS = 0 Vdc) (IS = 29 Adc, VGS = 0 Vdc, TJ = 125°C) VSD 0.92 TBD 1.3 Vdc Reverse Recovery Time (I 29 Ad V 0 Vd trr — 174 — ns (IS = 29 Adc, VGS = 0 Vdc, ta — 140 —(S , GS , dIS/dt = 100 A/µs) tb — 34 — Reverse Recovery Stored Charge Q RR — 1.4 — µC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of die) (Measured from the drain lead 0.25″ from package to center of die) LD 3.5 4.5 nH Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) LS — 7.5 — (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature.

/C0077/C0084/C0080/C0050/C0057/C0078/C0049/C0053/C0069 3Motorola TMOS Power MOSFET Transistor Device Data PACKAGE DIMENSIONS CASE 221A–06 ISSUE Y NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 B Q H Z L V G N A K F 12 3 D SEATING PLANE–T– C ST U R J

/C0077/C0084/C0080/C0050/C0057/C0078/C0049/C0053/C0069

4 Motorola TMOS Power MOSFET Transistor Device Data

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;JAPAN : Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Customer Focus Center: 1–800–521–6274 Motorola Fax Back System – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 – http://sps.motorola.com/mfax/ HOME PAGE : http://motorola.com/sps/ MTP29N15E/D◊