MTP23P06V ONSEMI | Alldatasheet

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 Semiconductor Components Industries, LLC, 2000 November, 2000 – Rev. 2

1 Publication Order Number:

23 Amps, 60 Volts

P–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

  • Avalanche Energy Specified
  • IDSS and VDS(on) Specified at Elevated Temperature MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–to–Source Voltage VDSS 60 Vdc Drain–to–Gate Voltage (RGS = 1.0 MΩ ) VDGR 60 Vdc Gate–to–Source Voltage – Continuous – Non–repetitive (tp ≤ 10 ms) VGS VGSM ± 15 ± 25 Vdc Vpk Drain Current – Continuous @ 25°C Drain Current – Continuous @ 100°C Drain Current – Single Pulse (tp ≤ 10 µs) ID ID IDM Adc Apk Total Power Dissipation @ 25°C Derate above 25°C PD 90 0.60 Watts W/°C Operating and Storage Temperature Range TJ, Tstg –55 to 175 Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 23 Apk, L = 3.0 mH, RG = 25 Ω ) EAS 794 mJ Thermal Resistance – Junction to Case Thermal Resistance – Junction to Ambient R θJC R θJA 1.67 62.5 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 seconds TL 260 °C D S G P–Channel

23 AMPERES

60 VOLTS

R DS(on) = 120 mΩ Preferred devices are recommended choices for future use and best overall value. Device Package Shipping

ORDERING INFORMATION

MTP23P06V TO–220AB 50 Units/Rail TO–220AB CASE 221A STYLE 5 http://onsemi.com MARKING DIAGRAM & PIN ASSIGNMENT MTP23P06V = Device Code LL = Location Code Y = Year WW = Work Week MTP23P06V LLYWW Gate Source Drain Drain

http://onsemi.com ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) V(BR)DSS 60.5 Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS 100 µAdc Gate–Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc) IGSS – – 100 nAdc ON CHARACTERISTICS (Note 1.) Gate Threshold Voltage (VDS = VGS , ID = 250 µAdc) Threshold Temperature Coefficient (Negative) VGS(th) 2.0 2.8 5.3 4.0 Vdc mV/°C Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 11.5 Adc) R DS(on) – 0.093 0.12 Ohm Drain–Source On–Voltage (VGS = 10 Vdc, ID = 23 Adc) (VGS = 10 Vdc, ID = 11.5 Adc, TJ = 150°C) VDS(on) 3.3 3.2 Vdc Forward Transconductance (VDS = 10.9 Vdc, ID = 11.5 Adc) gFS 5.0 11.5 – Mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 Vd V 0 Vd C iss – 1160 1620 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) C oss – 380 530 Transfer Capacitance f = 1.0 MHz) C rss – 105 210 SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time td(on) – 13.8 30 ns Rise Time (VDD = 30 Vdc, ID = 23 Adc, VGS =1 0V d c tr – 98.3 200 Turn–Off Delay Time VGS = 10 Vdc, R G = 9.1 Ω ) td(off) – 41 80 Fall Time R G 9.1 Ω ) tf – 62 120 Gate Charge (S Fi 8) Q T – 38 50 nC (See Figure 8) (VDS = 48 Vdc, ID = 23 Adc, Q 1 – 7.0 –(VDS 48 Vdc, ID 23 Adc, VGS = 10 Vdc) Q 2 – 18 – Q 3 – 14 – SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (IS = 23 Adc, VGS = 0 Vdc) (IS = 23 Adc, VGS = 0 Vdc, TJ = 150°C) VSD 2.2 1.8 3.5 Vdc Reverse Recovery Time trr – 142.2 – ns (IS 23 Adc VGS 0 Vdc ta – 100.5 – (IS = 23 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) tb – 41.7 – Reverse Recovery Stored Charge dIS/dt = 100 A/µs) Q RR – 0.804 – µC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of die) (Measured from the drain lead 0.25″ from package to center of die) LD – 3.5 4.5 nH Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) LS – 7.5 – nH 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature.

be charged by current from the generator. and Q2 and VGSP are read from the gate charge curve. on–state when calculating td(off). is difficult to measure and, consequently, is not specified. maintain a value of unity regardless of the switching speed. however, snubbing reduces switching losses. Figure 7. Capacitance Variation

5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 8. Gate–To–Source and Drain–To–Source Figure 9. Resistive Switching Time Figure 10. Diode Forward Voltage versus Current junction temperature and a case temperature (TC ) of 25°C. exceed (TJ(MAX) – TC )/(RθJC). assumed to equal the values indicated.

http://onsemi.com PACKAGE DIMENSIONS TO–220 THREE–LEAD TO–220AB CASE 221A–09 ISSUE AA STYLE 5: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 B Q H Z L V G N A K F 12 3 D SEATING PLANE–T– C ST U R J

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