IRF130-133 FAIRCHILD | Alldatasheet

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. a - ba pe seesu7y ooe7a8s4 4 | i . 3469674 FAIRCHILD SEMICONDUCTOR 84D 27859 D : a IRF130-133/IRF530-533 T-37-" 5 . paincHiLo MTP20N08/20N10 T39-43 i A Schlumberger Company N-Channel Power MOSFETs, | 20 A, 60-100 V_.. Power And Discrate Division Description TO-204AA TO-220AB These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed S) applications, such as switching power supplies, UPS, AC y) and DC motor controls, relay and solenoid drivers and % high energy pulse circuits. Yy. G (iS) 4 © Low Rosier) | © Vas Rated at +20 V — seo @ Silicon Gate for Fast Switching Speeds i © Ipss; Vosjon) Specified at Elevated Temperature Ieetey inrest |g Rusged IRF132 IRF532 | © Low Drive Requirements IRE192 apes {© Ease of Paralteting RS oe MTP20N10 Product Summary . Ip at Part Number Voss Rosion) To = 100°C Case Style Beg | wv | ont] wa [aaa] Tome waatnao [wv ors a | wa | sa | : Notes + Ferinformation concerning connection diagram and package outin, rele to Secon’. . t ij aS : 2-72 tee

. a een ha pe Bsueaez4 0027860 5 I 3469674 FAIRCHILD SEMICONDUCTOR 84D 27860 D . ° 4 FATRC Re ee -- . IRF130-133/IRF530-533 : : MTP20N08/20N10 7-39-11 1 T3913 Ce Maximum Ratings Rating | IRF130/132 Rating 1RF530/532 Rating IRF131/133, Symbol MTP20N10 MTP2ONO8 IRF531/533 Unit . Vom | Ban Souce Votes’ [wo [of . Vpca Drain to Gate Voltage’ v 2 ; Rags = 20 k &. Ty Tetg | Operating Junction and 755 to +150 | -55t0 +150 | -55 to +150 °C Storage Temperatures i TL Maximum Lead Temperature 278 275 278 °C | for Soldering Purposes, i 1/8" From Case for § § { i Maximum Thermal Characteristics . 1RF130-133 IRF530-533 MTP20N08/10 : Rao | Thermal Resistance, 1.67 °C/W ' Junction to Case : Po Total Power Dissipation 7 w at To = 25°C 1 | Electrical Characteristics (Tc = 25°C unless otherwise noted) : : symoot | ___ characterise [win] wox | unt _| Test Conditions Off Characteristics | Vieryoss | Drain Source Breakdown Voltage! v Ves =0 V, Ip= 250 HA 1RF130/132/530/532/ MTP2ON10 i loss Zero Gate Voltage Drain Current es ee | Vps = Rated Voss, Ves = 0 V aA Vos = 0.8 x Rated Voss, Ves = 0 V, To = 125°C less | Gate-Body Leakage Current nA | Vas= 20 V, Vos=0 V IRF130-133 #100 IRF530-533/ +500 MTP20NO8/MTP20N10 | 2.73 Bal a ad |

| 3469674 FAIRCHILD SEMICONDUCTOR a4 eB suese74 onezaur 2 I an IRF130-133/IRF530-533 | MTP20N08/20N10 i T-39-11 i T 39-13 j nn Electrical Characteristics (Cont.) (Tc = 25°C unless otherwise noted) ] On Characteristics ! Vastn | Gate Threshold Voltage C [| jy IRF130/133/530/533 [20 | 40 | Ip = 250 HA, Vos = Vas MTP20N08/20N10 [20 | 46 | Ip=1 mA, Vos = Vas Rosie | Static Drain-Source Onfesistance? | | Vas = 10 V, In=8.0 A IRF10/131/530/531 [| ote | 1RF132/133/532/533 a : MTP20N08/20N10 [| ons | Ip=10A : Vps(on) | Drain-Source On-Voltage” | 18 [| V_ | Vas=10 Vs b= 10 A . Vv Vag = 10 Vilp = 10 A . T= 100°C Ste Forward Transconductance [40 | | s@ | Vos = 10 V, Ip =8.0 A ° Dynamic Characteristics i Switching Characteristics (To = 25°C, Figures 1, 2)° | [Fisotme | 7 | teers a Neo i . a Aise Time [| aso ne | ea 50 : Q5 Total Gate Charge nC | Vos=10V, In= 18 A ’ Von = 80 V : i t EE 2-74

. “FAIRCHILD SEMICONDUCTOR gu pe Sf auesezy oo27ana 9 . IRF130-133/IRF530-533 MTP20N08/20N10 I . T-39-11 ‘ T3913 °~CS ; " Electrical Characteristics (Cont) (Tc = 25°C unless otherwise noted) Source-Drain Diode Characteristics IRF 130/131/530/531 v Is=14 A; Vas=0 V IRF 132/133/532/533 [45 | 28 | Vv [te=12Ai Vos-0V . Wy 4250 w +1800

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  1. Swiching timo moasurements performed on LEM TR-S8 test equipment. i Typical Electrical Characteristics : Figure 1 Switching Test Circuit Figure 2. Switching Waveforms i me . - | . yf dap ioe we ggpten | | = | : TTT sevarréo: | | i ne | ur oe BA | Shah ale . | e | | “ won lfm m\\ | ox . | 1 a sewom———ef : Typical Performance Curves | : Figure 4 Static Drain to Source Resistance i . Figure 3 Output Characteristics vs Drain Current 1 : “Ch FF 7 : oLoeee | by wee [TTT : . vy 02 4 an hany 652 | nb? aan : POAT # (ee : “ ad i | AAS ee eee . 2 ) a i es WAG LL ese a8 20 rr ) : \\os—DRAN SOURCE VOLTAGE-V Jo RAN CURRENT—A NE 2-75 toe i red

"oF re ~ AIRCHILD SEMICONDUCTOR 84 pe suese74 ooa7eey 2 Ef = | . IRF130-133/IRF530-533 ; MTP20N08/20N10 ; 1-39-11 =: ~~ 39-13 Typical Performance Curves (Cont) Figure 11 Forward Biased Safe Operating Area Figure 12 Transient Thermal Resistance vs Time { for MTP20N08/20N10 for MTP20N08/20N10 head ATION 1 REA 10 ~ eee oe [Lo AU AT AT « ESSENCE FRESE HI + [Geameetol SJ N i, oC 2 i HHINSS Beg

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