MTP1N60 MOTOROLA | Alldatasheet
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- MOTOROLA SC (XSTRS/R F) bBE D MM 6367254 0098629 T18 MENOTL MOTOROLA Wt SEMICONDUCTOR See TECHNICAL DATA : p Designer’s Data Sheet MTP1N60 Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate MOS POWER FET
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This TMOS Power FET is designed for high voltage, high speed | Rpsion) = 12 OHMS power switching applications such as switching regulators, con- @ | ‘600 VOLTS verters, solenoid and relay drivers. Tos | © Silicon Gate for Fast Switching Speeds — Switching Times oo Specified at 100°C © Designer's Data — Ipgg, Vos(on), VGsith) and SOA Specified 0 at Elevated Temperature ® Rugged — SOA is Power Dissipation Limited © Source-to-Drain Diode Characterized for Use With Inductive Loads G MAXIMUM RATINGS s Gate-Source Voltage Continuous Ves +20 Vde o Non-repetitive (tp < 50 us) VGsM +40 Vek Drain Current — Continuous — Pulsed Total Power Dissipation @ Tc = 25°C Watts Derate above 25°C wre H] [ Operating and Storage Temperature Range | Ty.Tag | —s5to180 |_| 6 THERMAL CHARACTERISTICS °. Thermal Resistance — Junction to Case Rac "CW — Junction to Ambient Rea > — CASE 221A-06 Maximum Lead Temperature for Soldering TL °c TO-220AB Purposes, 1/8" from case for 5 seconds ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(BR)DSS Vde (WGs = 0, Ip = 0.25 mA) Zero Gate Voltage Drain Current (Vps = Rated Voss. Ves = 0) (Vps = 0.8 Rated Vpss, Veg = 0, Ty = 125°C) Gate-Body Leakage Current, Forward (VGgF = 20 Vdc, Vpg = 0) | tcsse | — | 100 | nade | [_Gate-Body Leakage Current, Reverse (Vasn ~ 20Vdc.Vos=0) | tgssa | — [100 [nade | Teontinved) a MOTOROLA TMOS POWER MOSFET DATA 3-235
MOTOROLA SC (XSTRS/R F) BBE D MM 6367254 0098630 73T MEMOTL MTP1N60 ELECTRICAL CHARACTERISTICS — continued (Tc = 25°C unless otherwise noted) ON CHARACTERISTICS* fire Te | (Vps = Ves; Ip = 1 mA) 45 Ty = 100°C 4 [Sc rn Soe OnReowne Wa = TOW ip = OBA) | Posen | — | aoe Peewee Te [| | (ip = 05 Adc) (ip = 0.5 Ade, Ty = 100°C) [Ford nsdn Wag = T8Wig = OA | avg [as |e] DYNAMIC CHARACTERISTICS Input Capacitance (Vos = 25¥; Vag = 0, [Css | — | 200 | SWITCHING CHARACTERISTICS* (Tj = 100°C) Turn-On Delay Time : [tion | — | 2% | SeeFigures 13 and 14 [|_tatorn [| | Lew =a Gate-Source Charge Ip = Rated Ip, Vos = 10V) | Qos | 4(typ) | — ‘SOURCE DRAIN DIODE CHARACTERISTICS* Reverse Recovery Time tr | 0c | — [ns | INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance | [aso] = | nH (Measured from the contact screw on tab to center of die) 3.5 (Typ) (Measured from the drain lead 0 25" from package to center of die) 45 (Typ) Internal Source Inductance jem = | (Measured from the source lead 0.25” from package to source bond pad) “Pulse Test. Pulse Width = 300 us, Duty Cycle < 2%. MOTOROLA TMOS POWER MOSFET DATA 3-236
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Figure 1. On-Region Characteristics Figure 2. Gate-Threshold Voltage Variation
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Figure 3. Transfer Characteristics Figure 4. Breakdown Voltage Variation
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Figure 5. On-Resistance versus Drain Current Figure 6. On-Resistance Variation
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Figure 7. Maximum Rated Forward Biased Figure 8. Maximum Rated Switching
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Figure 10. Thermal Response