MTP15N15 MOTOROLA | Alldatasheet
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MOTOROLA SC (XSTRS/R F) bBE D MM 6367254 0098773 TOL MEMOTL MOTOROLA @ SEMICONDUON EEE TECHNICAL DATA F , Designer's Data Sheet MTP15N15 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET i is desi i high 15 AMPERES: This TMOS Power FET is designed for medium voltage, ig! Rosion) = 0.25 OHM speed power switching applications such as switching regulators, le or VOLTS converters, solenoid and relay drivers. Tos ® Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100°C © Designer's Data — Ipgg, Vps(on) VGSith) and SOA Specified D: at Elevated Temperature Rugged — SOA is Power Dissipation Limited ® Source-to-Drain Diode Characterized for Use With Inductive Loads G s MAXIMUM RATINGS fo ating Symbot [value Tune | / [ BrainSource Voltage | Mss | 180 |e | Q | Drain-Gate Voltage Ras =1M9) | ocr | 150 | Ve | Gate-Source Voltage — Continuous VGs +20 Vde — Non-repetitive (tp < 50 us) | _VGsM +40 Vpk 4 Drain Current — Continuous — Pulsed Total Power Dissipation @ Tc = 25°C 100 Watts CASE 2210-06 Derate above 25°C | | 08 wre TO-220AB ‘THERMAL CHARACTERISTICS Thermal Resistance “CW Junction to Case Rec 1.25 Junction to Ambient to20 | Raa | 025 | Maximum Lead Temperature for Soldering TL °c Purposes, 1/8" from case for 5 seconds Designer's Date for “Worst Case” Conditions — The Designer's Data Sheet permits the design of most circuits entirely from the information presented Limit MOTOROLA TMOS POWER MOSFET DATA 3-379
MOTOROLA SC C¥YSTRS/R F) b@E D MM 6367254 0098774 942 MBNOTL ELECTRICAL CHARACTERISTICS (Tc ~ 25°C unless otherwise noted) OFF CHARACTERISTICS Drain-Source Breakdown Voltage VipR)DSS 150 Ve | (Vgg = 0, Ip = 0.25 mA) [ Zero Gate Voltage Drain Current Ade (Vps ~ Rated Voss. Ves = 0) 10 (pg = Rated Vpgs. Ves = 0. Ty = 125°C) 100 Gate-Body Leakage Current, Forward (VggF = 20 Vdc, Vps = 0) | icsse | — | 100 | Ad | Gate-Body Leakage Current, Reverse (VGgr = 20 Vdc, Vos = 0) [ tcsse [ — | 100 | made | ON CHARACTERISTICS" Gate Threshold Voltage Vesith) 2 45 Vae (ps = Vs. Ip = 1 mA) 15 4 Ty = 100°C Static Drain-Source On-Resistance (Vgg = 10 Vde, Ip = 7.5 Adc) Roston) | — | 025 | Ohm Drain-Source On-Voltage (Vgg = 10 V) Vosion) Vde (ip = 18 Ade) 48 (ip = 7.5 Adc, Ty = 100°C) 3.78 [Foard Fonscnducnos Veg = 8p =78N | ws | se | — | ano | DYNAMIC CHARACTERISTICS Input Capacitance (Vp = 25 V, Veg = 0, __ Siss_ pF | Output Capacitance f= 1 MHz) Coss | s00 | SWITCHING CHARACTERISTICS* (Tj ~ 100°C) [wa [=] BO oteat [| = | 250 | See Figures 9, 13 and 14 two | = | a SOURCE DRAIN DIODE CHARACTERISTICS" ee INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance td | (Measured from the contact screw on tab to center of die) 3.8 (Typ) - (Measured from the drain lead 0.25" from package to center of die) 4.5 (Typ) - Internal Source Inductance ls 7.5 (Typ) {Measured from the source lead 0.25" from package to source bond pad.)| *Pulse Test Pulse Width = 300 us, Duty Cycle = 2% MOTOROLA TMOS POWER MOSFET DATA 3-380
Figure 7. Maximum Rated Forward Biased Figure 8. Maximum Rated Switching
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1 TIME (ms)
Figure 10. Thermal Response
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Figure 11. Capacitance Variation Figure 12. Gate Charge versus Figure 13. Switching Test Circuit Figure 14. Switching Waveforms