MTP15N05EL MOTOROLA | Alldatasheet
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MOTOROLA SC (CXSTRS/R F) b&E D MM 6367254 0098757 663 MEMOTE MOTOROLA @ SEMICONDUCTOR So TECHNICAL DATA : , MTP15NO5EL Designer's Data Sheet Motorola Peterea Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate ‘MOS POWER FET . LOGIC LEVEL This Logic Level TMOS Power FET is designed for high 15 AMPERES speed power switching applications such as switching regulators, Rpsion) = 0.1 OHM converters, solenoid and relay drivers. 50 VOLTS ‘© Low Drive Requirement to Interface Power Loads to Logic Level to AJ ICs or Microprocessors — V@gith) = 2 Volts max AOS | ——____, © Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100°C ° © Designer's Data — Ipss, Vpsion). Vesith) and SOA Specified at Elevated Temperature © Rugged — SOA is Power Dissipation Limited © Source-to-Drain Diode Characterized for Use With Inductive Loads G MAXIMUM RATINGS | s Drain-Source Voltage Voss Drain-Gate Voltage (Rgs = 1 MQ) Gate-Source Voltage “A Continuous Ves +15 Vde o Non-repetitive (tp = 50 us) VGsm +20 Vpk Drain Current — Continuous 15 Total Power Dissipation @ Tc = 25°C 75 Watts Derate above 25°C 0.6 WrC CASE 2214-06 ‘THERMAL CHARACTERISTICS TO-Z20AB Thermal Resistance “CW Junction to Case Rac 1.67 Junction to Ambient = MTM1SNOSL/06L Roa 30 MTP15NO5L/06L 62.5 Maximum Lead Temp. for Soldering TTL 260 oe Purposes, 1/8" from case for 5 seconds | ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) Characteristic [Symbot [Min Max | Unit _| OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(BR)DSS Vde (Vgs = 0, Ip = 1mA) MTM/MTP15NO5L 50 _ MTM/MTP15NO6L 60 - { Zero Gate Voltage Drain Current lpss_ | wAdc {Vps = Rated Vpss, Ves = 0) - (Vps = Rated Vpss, Vgg = 0, Ty = 125°C) - (continued) Designer's Data for “Worst Caso” Conditions — The Designer's Data Sheet permits the design of most circuits entirely from the information presented SOA Limit curves ~ representing boundanes on device characteristics — are given to facilitate "worst case” design Preferred device 1s a Motorola recommended choice for future use and best overall value. MOTOROLA TMOS POWER MOSFET DATA 3-363
MOTOROLA SC (XSETRS/R FY bAE D MM 6367254 00948758 7TT MEMOTL MIPTSNODEL ELECTRICAL CHARACTERISTICS — continued (Tc = 25°C unless otherwise noted) [nce | Som meme OFF CHARACTERISTICS (continued) Gate-Body Leakage Current, Forward (VggF = 15 Vde. Vps = 0} IGssF = ne | Gate Body Leakage Current, Reverse (VGgr = 15 Vdc, Vps = 0) [tcssk [| — | 100 ON CHARACTERISTICS Gate Threshold Voltage Vesith) Vde (Vps = Vas. !p = 1 mA) 1 2 {Ty = 100°C) 0.75 16 Static Drain-Source On-Resistance Rpston) (Veg = 5 Vdc, Ip = 7.5 Adc) Drain-Source On-Voltage (Vgg = 5 V) Vpsion) Vde (Ip = 15 Ade) (Ip = 7.5 Adc, Ty = 100°C) Forward Transconductance (Vpg = 15 V, Ip = 7.5 A) [= | mhos_ DYNAMIC CHARACTERISTICS Input Capacitance Vas = 15V, Vps = 0,f = 1 MHz Ciss 2800 See Figure 4 Vps = 25V,Vgg = 0,f = 1 MHz | — | 200 Reverse Transfer Capacitance |" Vgg = 15, Vps = 0,f = 1 MHz Crss 2400+) ~OF See Figure 4 SWITCHING CHARACTERISTICS (Ty = 100°C) won [= |] Co ‘SOURCE DRAIN DIODE CHARACTERISTICS - lig = Rated Ip, Vi = 0) rs INTERNAL PACKAGE INDUCTANCE (TO-220) Internal Drain inductance la nH {Measured from the contact screw on tab to center of die) 3.5 (Typ) (Measured from the drain lead 0.25" from package to center of die) 455 (Typ) Internal Source Inductance Ls 7.5 (Typ) (Measured from the source lead 0.25” from package to source bond pad.) MOTOROLA TMOS POWER MOSFET DATA 3-364
tations of simultaneous high voltage and high current, V(grypgs. The switching SOA shown in Figure 12is ap. to designers of linear systems. The curves are based on _switching times less than one microsecond. ts Use” provides detailed instructions.
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Figure 11. Maximum Rated Forward Figure 12. Maximum Rated Switching