MTP15N05E MOTOROLA | Alldatasheet
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MOTOROLA SC (XSTRS/R F) b8E D MM 6367254 0098752 281] MEMOTL MOTOROLA me SEMICONDUCTOR saan TECHNICAL DATA : 1, Designer’s Data Sheet MTP15NOSE . . Motorola Preferred Device Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET This TMOS Power FET is designed for low voltage, high Posi ) = 0 OHM speed power switching applications such as switching regulators, 50 VOLTS converters, solenoid and relay drivers. ® TMOS ® Silicon Gate for Fast Switching Speeds — Switching Times —— Specified at 100°C © Designer's Data — Ipss- Vos(on}- VGsith) and SOA Specified ° at Elevated Temperature ® Rugged — SOA is Power Dissipation Limited ®@ Source-to-Drain Diode Characterized for Use With Inductive Loads G s MAXIMUM RATINGS [ating TT Srembot [veiw [unit] [Dransoucevorogs ————SSSCSCSCS~*dCss |] ee | Gate-Source Voltage — Continuous. Ves +20 Vde \\ (°) — Non-repetitive (tp = 50 ys) VGsm +40 Vpk \\¥ Drain Current — Continuous yy, — Pulsed Wifi Total Power Dissipation @ Tc = 25°C 75 Watts Yff Derate above 25°C 06 wre 4 THERMAL CHARACTERISTICS Thermal Resistance “Cw Junction to Case Rac CASE 2210-06 Junction to Ambient 10220 | Awa | es _| To-z20A8 Maximum Lead Temperature for Soldering Th °c Purposes, 1/8” from case for 5 seconds Preferred device is a Motorola recommended choice for future use and best overall value. Designer's Data for “Worst Case” Conditions — The Designer's Data Sheet permits the design of most circuits entirely from the information presented. ‘SOA Limit curves — representing boundaries on device characteristics — are given to faciitate “worst case” design. MOTOROLA TMOS POWER MOSFET DATA 3-358
MOTOROLA SC (XSTRS/R F) BAE D MM 6367254 0096753 118 MMOTL MTP15NO5E ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) OFF CHARACTERISTICS Drain-Source Breakdown Voltage Vierioss | 50 Vde (Gs = 9, Ip = 0.25 mA} Zero Gate Voltage Drain Current pss Ade (Vps = Rated Vpsg, Ves = 0) (Vps = Rated Vogg, Veg = 0. Ty = 125°C) Gate-Body Leakage Current, Forward (Vgp = 20 Vdc, Vpg = 0) [100 [nade | Gate-Body Leakage Current, Reverse (VGgp = 20 Vde, Vpg — 0) | Iessr ON CHARACTERISTICS* [ Gate Threshold Voltage Vesith) Vae (ps = Vos. Ip = 1 mA) 2 {Ty = 10°C 15 Static Drain-Source On-Resistance (Vgg = 10 Vde, Ip = 7.5 Adc) [ Roston | — | 07 | Ohm | Drain-Source On-Voltage (Vgg = 10 V) Vpsion) Vae Ip = 15 Adc} - 29 lp = 75 Adc, Ty = 100°C) - 24 Forward Transconductance (Vpg = 15 V, Ip = 7.5 A) [ors | 35 [ — | mos | DYNAMIC CHARACTERISTICS Output Capacitance f = 1 MHz) [400 | Reverse Transfer Capacitance See Figure 11 200 SWITCHING CHARACTERISTICS* (Ty = 100°C) Turn-On Delay Time taon) [| — | 50 | as Rise Time (Vpp = 25 V, Ip = 0.5 Rated Ip | : Rey eo oneal j = | 0 | Turn-Off Delay Time _ See Figures 9, 13 and 14 td(off) [| - | 200 Fall Time — 100 Total Gate Charge (Nps = 08 Rated Voss, Qy 17 (Typ) [| nc Gate-Source Charge Ip = Rated Ip, Veg = 10) Qgs 8 (Typ) = SOURCE DRAIN DIODE CHARACTERISTICS" Reverse Recovery Time tr __| 320 (Typ) = [ = | INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance la (Measured from the contact screw on tab to center of die) 3.5 (Typ) - (Measured from the drain lead 0 25" from package to center of die) 45 (Typ) - Internal Source Inductance Us 7.5 (Typ) (Measured from the source lead 0.25" from package to source bond pad } { *Pulse Test Pulse Width = 200 ns, Duty Cycle = 2% I MOTOROLA TMOS POWER MOSFET DATA 3-359
Figure 7. Maximum Rated Forward Biased Figure 8. Maximum Rated Switching
28 GB eee += PULSE TRAIN SHOWN Ee
Figure 10. Thermal Response
3 AS aT TS
Figure 11. Capacitance Variation Figure 13. Switching Test Circuit Figure 14, Switching Waveforms